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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 7 — Mar. 26, 2012
  • pp: 7608–7615

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Efe Onaran, M. Cengiz Onbasli, Alper Yesilyurt, Hyun Yong Yu, Ammar M. Nayfeh, and Ali K. Okyay  »View Author Affiliations


Optics Express, Vol. 20, Issue 7, pp. 7608-7615 (2012)
http://dx.doi.org/10.1364/OE.20.007608


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Abstract

Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ~10 mA/cm2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage.

© 2012 OSA

OCIS Codes
(160.2100) Materials : Electro-optical materials
(230.5160) Optical devices : Photodetectors
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(230.4205) Optical devices : Multiple quantum well (MQW) modulators

ToC Category:
Detectors

History
Original Manuscript: January 3, 2012
Revised Manuscript: February 19, 2012
Manuscript Accepted: February 27, 2012
Published: March 19, 2012

Virtual Issues
Vol. 7, Iss. 5 Virtual Journal for Biomedical Optics

Citation
Efe Onaran, M. Cengiz Onbasli, Alper Yesilyurt, Hyun Yong Yu, Ammar M. Nayfeh, and Ali K. Okyay, "Silicon-Germanium multi-quantum well photodetectors in the near infrared," Opt. Express 20, 7608-7615 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-7-7608


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