Silicon-Germanium multi-quantum well photodetectors in the near infrared

doi:10.1364/OE.20.007608

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Efe Onaran, M. Cengiz Onbasli, Alper Yesilyurt, Hyun Yong Yu, Ammar M. Nayfeh, and Ali K. Okyay »View Author Affiliations

Optics Express, Vol. 20, Issue 7, pp. 7608-7615 (2012)
http://dx.doi.org/10.1364/OE.20.007608

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Abstract

Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ~10 mA/cm² and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage.

OCIS Codes
(160.2100) Materials : Electro-optical materials
(230.5160) Optical devices : Photodetectors
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(230.4205) Optical devices : Multiple quantum well (MQW) modulators

ToC Category:
Detectors

History
Original Manuscript: January 3, 2012
Revised Manuscript: February 19, 2012
Manuscript Accepted: February 27, 2012
Published: March 19, 2012

Virtual Issues
Vol. 7, Iss. 5 Virtual Journal for Biomedical Optics

Citation
Efe Onaran, M. Cengiz Onbasli, Alper Yesilyurt, Hyun Yong Yu, Ammar M. Nayfeh, and Ali K. Okyay, "Silicon-Germanium multi-quantum well photodetectors in the near infrared," Opt. Express 20, 7608-7615 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-7-7608

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References

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D. Miller, D. Chemla, T. Damen, A. Gossard, W. Wiegmann, T. Wood, and C. Burrus, “Band-edge electroabsorption in quantum well structures: the quantum-confined Stark effect,” Phys. Rev. Lett.53(22), 2173–2176 (1984). [CrossRef]
D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum-well structures,” Phys. Rev. B Condens. Matter32(2), 1043–1060 (1985). [CrossRef] [PubMed]
C. Chen, B. Yu, J. Liu, and Q. Dai, “Structural characteristics of SiGe/Si materials investigated by Raman spectroscopy,” Met. Mater. Int.11(4), 279–283 (2005). [CrossRef]
J. Olivares, P. Martin, A. Rodriguez, J. Sangrador, J. Jimenez, and T. Rodríguez, “Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization,” Thin Solid Films358(1–2), 51–56 (2000). [CrossRef]
H.-C. Luan, K. Wada, L. C. Kimerling, G. Masini, L. Colace, and G. Assanto, “High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates,” Opt. Mater.17(1-2), 71–73 (2001). [CrossRef]
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L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett.19(22), 1813–1815 (2007). [CrossRef]

Ahn, D.
Assanto, G.
Balbi, M.
Bandaru, P. R.
Beals, M.
Berroth, M.
Burrus, C.
Burrus, C. A.
Cannon, D. D.
Cassan, E.
Chemla, D.
Chemla, D. S.
Chen, C.
Chen, J.
Chui, C. O.
Colace, L.
Crozat, P.
Currie, M. T.
Dai, Q.
Damen, T.
Damen, T. C.
Damlencourt, J.-F.
Danielson, D. T.
Famà, S.
Fédéli, J.-M.
Ferrara, P.
Fidaner, O.
Fitzgerald, E. A.
Fulgoni, D.
Ge, Y.
Giziewicz, W.
Gossard, A.
Gossard, A. C.
Harris, J. S.
Hong, C. Y.
Ilday, F. Ö.
Jiang, Z.
Jimenez, J.
Jongthammanurak, S.
Jung, W. S.
Jutzi, M.
Kamins, T. I.
Kärtner, F. X.
Kasper, E.
Kim, H.-J.
Kimerling, L. C.
Kouvetakis, J.
Kuo, Y.-H.
Langdo, T. A.
Laval, S.
Lecunff, Y.
Lee, Y. K.
Li, B.
Li, G.
Liu, E.
Liu, J.
Liu, J. L.
Luan, H.-C.
Marris-Morini, D.
Marshall, A.
Martin, P.
Masini, G.
Mathews, J.
McIntyre, P. C.
Menéndez, J.
Michel, J.
Miller, D.
Miller, D. A. B.
Nash, L.
Nayfeh, A. M.
Oehme, M.
Okyay, A. K.
Olivares, J.
Osmond, J.
Pan, D.
Qin, J.
Ren, S.
Rodriguez, A.
Rodríguez, T.
Roth, J. E.
Roucka, R.
Sahni, S.
Samavedam, S. B.
Sangrador, J.
Saraswat, K. C.
Schaevitz, R. K.
Vivien, L.
Wada, K.
Wang, K. L.
Wang, X.
Werner, J.
Wiegmann, W.
Wood, T.
Wood, T. H.
Xie, J.
Xie, Y.-H.
Yablonovitch, E.
Yang, Z.
Yasaitis, J.
Yonehara, T.
Yu, B.
Yu, H.-Y.
Yu, S.-Q.

Appl. Phys. Lett.

J. Mathews, R. Roucka, J. Xie, S.-Q. Yu, J. Menéndez, and J. Kouvetakis, “Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications,” Appl. Phys. Lett.95(13), 133506 (2009). [CrossRef]
A. M. Nayfeh, C. O. Chui, K. C. Saraswat, and T. Yonehara, “Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: surface roughness and electrical quality,” Appl. Phys. Lett.85(14), 2815–2817 (2004). [CrossRef]
M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett.89(7), 071117 (2006). [CrossRef]
J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, J. Chen, F. Ö. Ilday, F. X. Kärtner, and J. Yasaitis, “High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform,” Appl. Phys. Lett.87(10), 103501 (2005). [CrossRef]
L. Colace, M. Balbi, G. Masini, G. Assanto, H.-C. Luan, and L. C. Kimerling, “Ge on Si p-i-n photodiodes operating at 10 Gbit/s,” Appl. Phys. Lett.88(10), 101111 (2006). [CrossRef]
S. Famà, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, “High performance germanium-on-silicon detectors for optical communications,” Appl. Phys. Lett.81(4), 586–588 (2002). [CrossRef]
S. B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, “High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers,” Appl. Phys. Lett.73(15), 2125–2127 (1998). [CrossRef]
B. Li, G. Li, E. Liu, Z. Jiang, J. Qin, and X. Wang, “Monolithic integration of a SiGe/Si modulator and multiple quantum well photodetector for 1.55 μm operation,” Appl. Phys. Lett.73(24), 3504–3505 (1998). [CrossRef]

IEEE Electron Device Lett.

H.-Y. Yu, S. Ren, W. S. Jung, A. K. Okyay, D. A. B. Miller, and K. C. Saraswat, “High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration,” IEEE Electron Device Lett.30(11), 1161–1163 (2009). [CrossRef]

IEEE Photon. Technol. Lett.

O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett.19(20), 1631–1633 (2007). [CrossRef]
L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett.19(22), 1813–1815 (2007). [CrossRef]

J. Appl. Phys.

J. L. Liu, Z. Yang, and K. L. Wang, “Sb surfactant-mediated SiGe graded layers for Ge photodiodes integrated on Si,” J. Appl. Phys.99(2), 024504 (2006). [CrossRef]

Mater. Sci. Eng. B

P. R. Bandaru, S. Sahni, E. Yablonovitch, J. Liu, H.-J. Kim, and Y.-H. Xie, “Fabrication and characterization of low temperature (<450 °C) grown p-Ge/n-Si photodetectors for silicon based photonics,” Mater. Sci. Eng. B113(1), 79–84 (2004). [CrossRef]

Met. Mater. Int.

C. Chen, B. Yu, J. Liu, and Q. Dai, “Structural characteristics of SiGe/Si materials investigated by Raman spectroscopy,” Met. Mater. Int.11(4), 279–283 (2005). [CrossRef]

Nature

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437(7063), 1334–1336 (2005). [CrossRef] [PubMed]

Opt. Express

Opt. Lett.

A. K. Okyay, A. M. Nayfeh, K. C. Saraswat, T. Yonehara, A. Marshall, and P. C. McIntyre, “High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si,” Opt. Lett.31(17), 2565–2567 (2006). [CrossRef] [PubMed]

Opt. Mater.

H.-C. Luan, K. Wada, L. C. Kimerling, G. Masini, L. Colace, and G. Assanto, “High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates,” Opt. Mater.17(1-2), 71–73 (2001). [CrossRef]

Phys. Rev. B Condens. Matter

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum-well structures,” Phys. Rev. B Condens. Matter32(2), 1043–1060 (1985). [CrossRef] [PubMed]

Phys. Rev. Lett.

D. Miller, D. Chemla, T. Damen, A. Gossard, W. Wiegmann, T. Wood, and C. Burrus, “Band-edge electroabsorption in quantum well structures: the quantum-confined Stark effect,” Phys. Rev. Lett.53(22), 2173–2176 (1984). [CrossRef]

Thin Solid Films

J. Olivares, P. Martin, A. Rodriguez, J. Sangrador, J. Jimenez, and T. Rodríguez, “Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization,” Thin Solid Films358(1–2), 51–56 (2000). [CrossRef]

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