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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 8 — Apr. 9, 2012
  • pp: 8228–8239

Dependences of photoluminescence from P-implanted epitaxial Ge

L. Ding, Andy Eu-Jin Lim, Jason Tsung-Yang Liow, M. B. Yu, and G.-Q. Lo  »View Author Affiliations

Optics Express, Vol. 20, Issue 8, pp. 8228-8239 (2012)

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A systematic investigation has been carried out to study the influence of various annealings and implantations on the photoluminescence (PL) properties of phosphorus (P)-implanted Ge epitaxial films on Si substrate. For un-capped Ge samples, rapid thermal annealing (RTA) at 700 °C for 300 seconds yields the strongest PL emission peaked at 1550 nm. The influence of employing various capping layers (i.e., SiO2, Si3N4, and α-Si) on the PL properties has been investigated. The capping layers are found to effectively decrease the dopant loss, leading to a significant PL enhancement. Si3N4 is found to be the most efficient capping layer to prevent dopant out-diffusion and thus lead to strongest PL. Furthermore, it has been found that capping layers not only enhance the PL intensities but also make PL emission peak red- and blue- shift, depending on the stress type of the capping films. The effect of implantation dose on the PL has been also investigated.

© 2012 OSA

OCIS Codes
(130.3130) Integrated optics : Integrated optics materials
(140.3380) Lasers and laser optics : Laser materials

ToC Category:
Integrated Optics

Original Manuscript: November 14, 2011
Revised Manuscript: February 1, 2012
Manuscript Accepted: February 1, 2012
Published: March 26, 2012

L. Ding, Andy Eu-Jin Lim, Jason Tsung-Yang Liow, M. B. Yu, and G.-Q. Lo, "Dependences of photoluminescence from P-implanted epitaxial Ge," Opt. Express 20, 8228-8239 (2012)

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