Planar InAs photodiodes fabricated using He ion implantation

doi:10.1364/OE.20.008575

Planar InAs photodiodes fabricated using He ion implantation

Ian Sandall, Chee Hing Tan, Andrew Smith, and Russell Gwilliam »View Author Affiliations

Optics Express, Vol. 20, Issue 8, pp. 8575-8583 (2012)
http://dx.doi.org/10.1364/OE.20.008575

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Abstract

We have performed Helium (He) ion implantation on InAs and performed post implant annealing to investigate the effect on the sheet resistance. Using the transmission line model (TLM) we have shown that the sheet resistance of a p⁺ InAs layer, with a nominal doping concentration of 1x10¹⁸ cm⁻³, can increase by over 5 orders of magnitude upon implantation. We achieved a sheet resistance of 1x10⁵ Ω/Square in an ‘as-implanted’ sample and with subsequent annealing this can be further increased to 1x10⁷ Ω/Square. By also performing implantation on p-i-n structures we have shown that it is possible to produce planar photodiodes with comparable dark currents and quantum efficiencies to chemically etched reference mesa InAs photodiodes.

OCIS Codes
(040.3060) Detectors : Infrared
(040.5160) Detectors : Photodetectors
(160.6000) Materials : Semiconductor materials
(230.5170) Optical devices : Photodiodes
(040.1345) Detectors : Avalanche photodiodes (APDs)

ToC Category:
Detectors

History
Original Manuscript: January 26, 2012
Revised Manuscript: March 4, 2012
Manuscript Accepted: March 23, 2012
Published: March 28, 2012

Citation
Ian Sandall, Chee Hing Tan, Andrew Smith, and Russell Gwilliam, "Planar InAs photodiodes fabricated using He ion implantation," Opt. Express 20, 8575-8583 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-8-8575

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References

I. Baker, S. Duncan, and J. Copley, “A low noise, laser-gated imaging system for long range target. identification,” Proc. SPIE5406, 133–144 (2004). [CrossRef]
A. Krier, H. H. Gao, and Y. Mao, “A room temperature photovoltaic detector for the mid -infrared (1.8–3.4 μm) wavelength region,” Semicond. Sci. Technol.13(8), 950–956 (1998). [CrossRef]
M. Achour, “Free-space optics wavelength selection: 10 μm versus shorter wavelengths,” Proc. SPIE5160, 234–246 (2004). [CrossRef]
A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, “Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes,” Appl. Phys. Lett.93(11), 111107 (2008). [CrossRef]
A. R. J. Marshall, P. Vines, P. J. Ker, J. P. R. David, and C. H. Tan, “Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K,” IEEE J. Quantum Electron.47(6), 858–864 (2011). [CrossRef]
P. J. Ker, A. R. J. Marshall, A. B. Krysa, J. P. R. David, and C. H. Tan, “Temperature dependence of leakage current in InAs avalanche photodiodes,” IEEE J. Quantum Electron.47(8), 1123–1128 (2011). [CrossRef]
J. M Arias, J. G. Pasko, M. Zandian, S. H. Shin, G. M. Williams, L. O. Bubulac, R. E. de Wames, and W. E. Tennant, “MBE HgCdTe heterostructure p-on-n planar infrared photodiodes,” J. Electron. Mater.22, 1049–1053 (1993).
R. Wollrab, A. Bauer, H. Bitterlich, M. Bruder, S. Hanna, H. Lutz, K.-M. Mahlein, T. Schallenberg, and J. Ziegler, “Planar n-on-p HgCdTe FPAs for LWIR and VLWIR applications,” J. Electron. Mater.40(8), 1618–1623 (2011). [CrossRef]
A. Säynätjoki, P. Kostamo, J. Sormunen, J. Riikonen, A. Lankinen, H. Lipsanen, H. Andersson, K. Banzuzi, S. Nenonen, H. Sipilä, S. Vaijärvi, and D. Lumb, “InAs pixel matrix detectors fabricated by diffusion of Zn in a metal-organic vapour-phase epitaxy reactor,” Nucl. Instrum. Methods Phys. Res. A563(1), 24–26 (2006). [CrossRef]
J. W. Shi, F. M. Kuo, and B. R. Huang, “Zn-diffusion InAs photodiodes on a semi-insulating GaAs substrate for high-speed and low dark-current performance,” IEEE Photon. Technol. Lett.23(2), 100–102 (2011). [CrossRef]
A. Ezis and D. W. Langer, “Backgating characteristics of MODFET structures,” IEEE Electron Device Lett.6(10), 494–496 (1985). [CrossRef]
J. D. Speight, P. Leigh, N. Mcintyre, I. G. Groves, S. O’Hara, and P. Hemment, “High-efficiency proton-isolated GaAs IMPATT diodes,” Electron Lett.10(7), 98–99 (1974). [CrossRef]
J. J. Hsieh, J. A. Rossi, and J. P. Donnelly, “Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m,” Appl. Phys. Lett.28(12), 709–711 (1976). [CrossRef]
M. V. Rao, “High-energy (MeV) ion implantation and its device applications in GaAs and InP,” IEEE Trans. Electron. Dev.40(6), 1053–1066 (1993). [CrossRef]
S. Ahmed, B. J. Sealy, and R. Gwilliam, “Annealing characteristics of the implant-isolated n-type GaAs layers: effects of ion species and implant temperature,” Nucl. Instrum. Methods Phys. Res. B206, 1008–1012 (2003). [CrossRef]
S. Ahmed, R. Gwilliam, and B. J. Sealy, “Ion-beam-induced isolation of GaAs layers by 4He+ implantation: effects of hot implants,” Semicond. Sci. Technol.16(10), L64–L67 (2001). [CrossRef]
A. G. Foyt, W. T. Lindley, and J. P. Donelly, “n‐p Junction photodetectors in InSb fabricated by proton bombardment,” Appl. Phys. Lett.16(9), 335–337 (1970). [CrossRef]
S. J. Pearton, “Ion implantation doping and isolation of III-V semiconductors,” Nucl. Instrum. Methods Phys. Res. B59–60, 970–977 (1991). [CrossRef]
P. Too, S. Ahmed, R. Gwilliam, and B. J. Sealy, “Electrical isolation of InP and InGaAs using iron and krypton,” Electron. Lett.40(20), 1302–1303 (2004). [CrossRef]
H. Boudinov, H. H. Tan, and C. Jagadish, “Electrical isolation of n-type and p-type InP layers by proton bombardment,” J. Appl. Phys.89(10), 5343–5347 (2001). [CrossRef]

Achour, M.
Ahmed, S.
Andersson, H.
Arias, J. M
Baker, I.
Banzuzi, K.
Bauer, A.
Bitterlich, H.
Boudinov, H.
Bruder, M.
Bubulac, L. O.
Copley, J.
David, J. P. R.
de Wames, R. E.
Donelly, J. P.
Donnelly, J. P.
Duncan, S.
Ezis, A.
Foyt, A. G.
Gao, H. H.
Groves, I. G.
Gwilliam, R.
Hanna, S.
Hemment, P.
Hsieh, J. J.
Huang, B. R.
Jagadish, C.
Ker, P. J.
Kostamo, P.
Krier, A.
Krysa, A. B.
Kuo, F. M.
Langer, D. W.
Lankinen, A.
Leigh, P.
Lindley, W. T.
Lipsanen, H.
Lumb, D.
Lutz, H.
Mahlein, K.-M.
Mao, Y.
Marshall, A. R. J.
Mcintyre, N.
Nenonen, S.
O’Hara, S.
Pasko, J. G.
Pearton, S. J.
Rao, M. V.
Riikonen, J.
Rossi, J. A.
Säynätjoki, A.
Schallenberg, T.
Sealy, B. J.
Shi, J. W.
Shin, S. H.
Sipilä, H.
Sormunen, J.
Speight, J. D.
Steer, M. J.
Tan, C. H.
Tan, H. H.
Tennant, W. E.
Too, P.
Vaijärvi, S.
Vines, P.
Williams, G. M.
Wollrab, R.
Zandian, M.
Ziegler, J.

Appl. Phys. Lett.

A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, “Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes,” Appl. Phys. Lett.93(11), 111107 (2008). [CrossRef]
J. J. Hsieh, J. A. Rossi, and J. P. Donnelly, “Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m,” Appl. Phys. Lett.28(12), 709–711 (1976). [CrossRef]
A. G. Foyt, W. T. Lindley, and J. P. Donelly, “n‐p Junction photodetectors in InSb fabricated by proton bombardment,” Appl. Phys. Lett.16(9), 335–337 (1970). [CrossRef]

Electron Lett.

J. D. Speight, P. Leigh, N. Mcintyre, I. G. Groves, S. O’Hara, and P. Hemment, “High-efficiency proton-isolated GaAs IMPATT diodes,” Electron Lett.10(7), 98–99 (1974). [CrossRef]

Electron. Lett.

P. Too, S. Ahmed, R. Gwilliam, and B. J. Sealy, “Electrical isolation of InP and InGaAs using iron and krypton,” Electron. Lett.40(20), 1302–1303 (2004). [CrossRef]

IEEE Electron Device Lett.

A. Ezis and D. W. Langer, “Backgating characteristics of MODFET structures,” IEEE Electron Device Lett.6(10), 494–496 (1985). [CrossRef]

IEEE J. Quantum Electron.

A. R. J. Marshall, P. Vines, P. J. Ker, J. P. R. David, and C. H. Tan, “Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K,” IEEE J. Quantum Electron.47(6), 858–864 (2011). [CrossRef]
P. J. Ker, A. R. J. Marshall, A. B. Krysa, J. P. R. David, and C. H. Tan, “Temperature dependence of leakage current in InAs avalanche photodiodes,” IEEE J. Quantum Electron.47(8), 1123–1128 (2011). [CrossRef]

IEEE Photon. Technol. Lett.

J. W. Shi, F. M. Kuo, and B. R. Huang, “Zn-diffusion InAs photodiodes on a semi-insulating GaAs substrate for high-speed and low dark-current performance,” IEEE Photon. Technol. Lett.23(2), 100–102 (2011). [CrossRef]

IEEE Trans. Electron. Dev.

M. V. Rao, “High-energy (MeV) ion implantation and its device applications in GaAs and InP,” IEEE Trans. Electron. Dev.40(6), 1053–1066 (1993). [CrossRef]

J. Appl. Phys.

H. Boudinov, H. H. Tan, and C. Jagadish, “Electrical isolation of n-type and p-type InP layers by proton bombardment,” J. Appl. Phys.89(10), 5343–5347 (2001). [CrossRef]

J. Electron. Mater.

J. M Arias, J. G. Pasko, M. Zandian, S. H. Shin, G. M. Williams, L. O. Bubulac, R. E. de Wames, and W. E. Tennant, “MBE HgCdTe heterostructure p-on-n planar infrared photodiodes,” J. Electron. Mater.22, 1049–1053 (1993).
R. Wollrab, A. Bauer, H. Bitterlich, M. Bruder, S. Hanna, H. Lutz, K.-M. Mahlein, T. Schallenberg, and J. Ziegler, “Planar n-on-p HgCdTe FPAs for LWIR and VLWIR applications,” J. Electron. Mater.40(8), 1618–1623 (2011). [CrossRef]

Nucl. Instrum. Methods Phys. Res. A

A. Säynätjoki, P. Kostamo, J. Sormunen, J. Riikonen, A. Lankinen, H. Lipsanen, H. Andersson, K. Banzuzi, S. Nenonen, H. Sipilä, S. Vaijärvi, and D. Lumb, “InAs pixel matrix detectors fabricated by diffusion of Zn in a metal-organic vapour-phase epitaxy reactor,” Nucl. Instrum. Methods Phys. Res. A563(1), 24–26 (2006). [CrossRef]

Nucl. Instrum. Methods Phys. Res. B

S. Ahmed, B. J. Sealy, and R. Gwilliam, “Annealing characteristics of the implant-isolated n-type GaAs layers: effects of ion species and implant temperature,” Nucl. Instrum. Methods Phys. Res. B206, 1008–1012 (2003). [CrossRef]
S. J. Pearton, “Ion implantation doping and isolation of III-V semiconductors,” Nucl. Instrum. Methods Phys. Res. B59–60, 970–977 (1991). [CrossRef]

Proc. SPIE

M. Achour, “Free-space optics wavelength selection: 10 μm versus shorter wavelengths,” Proc. SPIE5160, 234–246 (2004). [CrossRef]
I. Baker, S. Duncan, and J. Copley, “A low noise, laser-gated imaging system for long range target. identification,” Proc. SPIE5406, 133–144 (2004). [CrossRef]

Semicond. Sci. Technol.

A. Krier, H. H. Gao, and Y. Mao, “A room temperature photovoltaic detector for the mid -infrared (1.8–3.4 μm) wavelength region,” Semicond. Sci. Technol.13(8), 950–956 (1998). [CrossRef]
S. Ahmed, R. Gwilliam, and B. J. Sealy, “Ion-beam-induced isolation of GaAs layers by 4He+ implantation: effects of hot implants,” Semicond. Sci. Technol.16(10), L64–L67 (2001). [CrossRef]

2011, Marshall, IEEE J. Quantum Electron.
2011, Ker, IEEE J. Quantum Electron.
2011, Wollrab, J. Electron. Mater.
2011, Shi, IEEE Photon. Technol. Lett.
2008, Marshall, Appl. Phys. Lett.
2006, Säynätjoki, Nucl. Instrum. Methods Phys. Res. A
2004, Achour, Proc. SPIE
2004, Baker, Proc. SPIE
2004, Too, Electron. Lett.
2003, Ahmed, Nucl. Instrum. Methods Phys. Res. B
2001, Ahmed, Semicond. Sci. Technol.
2001, Boudinov, J. Appl. Phys.
1998, Krier, Semicond. Sci. Technol.
1993, Arias, J. Electron. Mater.
1993, Rao, IEEE Trans. Electron. Dev.
1991, Pearton, Nucl. Instrum. Methods Phys. Res. B
1985, Ezis, IEEE Electron Device Lett.
1976, Hsieh, Appl. Phys. Lett.
1974, Speight, Electron Lett.
1970, Foyt, Appl. Phys. Lett.

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