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Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase dopingMitsuru Takenaka, Kiyohito Morii, Masakazu Sugiyama, Yoshiaki Nakano, and Shinichi Takagi »View Author Affiliations
Mitsuru Takenaka,1,2,*
Kiyohito Morii,1
Masakazu Sugiyama,1
Yoshiaki Nakano,1
and Shinichi Takagi1
1Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan 2PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan *Corresponding author: takenaka@mosfet.t.u-tokyo.ac.jp |
Optics Express, Vol. 20, Issue 8, pp. 8718-8725 (2012)
http://dx.doi.org/10.1364/OE.20.008718
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Abstract
We have investigated the dark current of a germanium (Ge) photodetector (PD) with a GeO2 surface passivation layer and a gas-phase-doped n+/p junction. The gas-phase-doped PN diodes exhibited a dark current of approximately two orders of magnitude lower than that of the diodes formed by a conventional ion implantation process, indicating that gas-phase doping is suitable for low-damage PN junction formation. The bulk leakage (Jbulk) and surface leakage (Jsurf) components of the dark current were also investigated. We have found that GeO2 surface passivation can effectively suppress the dark current of a Ge PD in conjunction with gas-phase doping, and we have obtained extremely low values of Jbulk of 0.032 mA/cm2 and Jsurf of 0.27 μA/cm.
© 2012 OSA
OCIS Codes
(040.5160) Detectors : Photodetectors
(060.4510) Fiber optics and optical communications : Optical communications
(250.0250) Optoelectronics : Optoelectronics
ToC Category:
Detectors
History
Original Manuscript: February 8, 2012
Revised Manuscript: March 21, 2012
Manuscript Accepted: March 27, 2012
Published: March 30, 2012
Citation
Mitsuru Takenaka, Kiyohito Morii, Masakazu Sugiyama, Yoshiaki Nakano, and Shinichi Takagi, "Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping," Opt. Express 20, 8718-8725 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-8-8718
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References
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- K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron.16(1), 106–113 (2010). [CrossRef]
- L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett.19(22), 1813–1815 (2007). [CrossRef]
- O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett.19(20), 1631–1633 (2007). [CrossRef]
- S. B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, “High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers,” Appl. Phys. Lett.73(15), 2125–2127 (1998). [CrossRef]
- L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett.19(22), 1813–1815 (2007). [CrossRef]
- M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE6898, 689804(2008). [CrossRef]
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