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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 8 — Apr. 9, 2012
  • pp: 8718–8725

Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping

Mitsuru Takenaka, Kiyohito Morii, Masakazu Sugiyama, Yoshiaki Nakano, and Shinichi Takagi  »View Author Affiliations


Optics Express, Vol. 20, Issue 8, pp. 8718-8725 (2012)
http://dx.doi.org/10.1364/OE.20.008718


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Abstract

We have investigated the dark current of a germanium (Ge) photodetector (PD) with a GeO2 surface passivation layer and a gas-phase-doped n+/p junction. The gas-phase-doped PN diodes exhibited a dark current of approximately two orders of magnitude lower than that of the diodes formed by a conventional ion implantation process, indicating that gas-phase doping is suitable for low-damage PN junction formation. The bulk leakage (Jbulk) and surface leakage (Jsurf) components of the dark current were also investigated. We have found that GeO2 surface passivation can effectively suppress the dark current of a Ge PD in conjunction with gas-phase doping, and we have obtained extremely low values of Jbulk of 0.032 mA/cm2 and Jsurf of 0.27 μA/cm.

© 2012 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(060.4510) Fiber optics and optical communications : Optical communications
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Detectors

History
Original Manuscript: February 8, 2012
Revised Manuscript: March 21, 2012
Manuscript Accepted: March 27, 2012
Published: March 30, 2012

Citation
Mitsuru Takenaka, Kiyohito Morii, Masakazu Sugiyama, Yoshiaki Nakano, and Shinichi Takagi, "Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping," Opt. Express 20, 8718-8725 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-8-8718


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