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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 8 — Apr. 9, 2012
  • pp: 8949–8958

Compact and low power operation optical switch using silicon-germanium/silicon hetero-structure waveguide

Shigeaki Sekiguchi, Teruo Kurahashi, Lei Zhu, Kenichi Kawaguchi, and Ken Morito  »View Author Affiliations

Optics Express, Vol. 20, Issue 8, pp. 8949-8958 (2012)

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We proposed a silicon-based optical switch with a carrier-plasma-induced phase shifter which employs a silicon-germanium (SiGe) / silicon (Si) hetero-structure in the waveguide core. A type-I hetero-interface formed by SiGe and Si is expected to confine carriers effectively in the SiGe waveguide core. The fabricated Mach-Zehnder optical switch shows a low switching power of only 1.53 mW with a compact phase shifter length of 250 μm. The switching time of the optical switch is less than 4.6 ns for the case of a square waveform driving condition, and 1 ns for the case of a pre-emphasis electric driving condition. These results show that our proposed SiGe/Si waveguide structure holds promise for active devices with compact size and low operation power.

© 2012 OSA

OCIS Codes
(130.4815) Integrated optics : Optical switching devices
(250.6715) Optoelectronics : Switching

ToC Category:

Original Manuscript: January 3, 2012
Revised Manuscript: March 6, 2012
Manuscript Accepted: March 8, 2012
Published: April 3, 2012

Shigeaki Sekiguchi, Teruo Kurahashi, Lei Zhu, Kenichi Kawaguchi, and Ken Morito, "Compact and low power operation optical switch using silicon-germanium/silicon hetero-structure waveguide," Opt. Express 20, 8949-8958 (2012)

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