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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 8 — Apr. 9, 2012
  • pp: 9172–9177

High-speed photodiodes for InP-based photonic integrated circuits

E. Rouvalis, M. Chtioui, M. Tran, F. Lelarge, F. van Dijk, M. J. Fice, C. C. Renaud, G. Carpintero, and A. J. Seeds  »View Author Affiliations

Optics Express, Vol. 20, Issue 8, pp. 9172-9177 (2012)

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We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).

© 2012 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(250.5300) Optoelectronics : Photonic integrated circuits
(060.5625) Fiber optics and optical communications : Radio frequency photonics

ToC Category:

Original Manuscript: February 14, 2012
Revised Manuscript: April 2, 2012
Manuscript Accepted: April 2, 2012
Published: April 5, 2012

E. Rouvalis, M. Chtioui, M. Tran, F. Lelarge, F. van Dijk, M. J. Fice, C. C. Renaud, G. Carpintero, and A. J. Seeds, "High-speed photodiodes for InP-based photonic integrated circuits," Opt. Express 20, 9172-9177 (2012)

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