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Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiverHidetaka Nishi, Tai Tsuchizawa, Rai Kou, Hiroyuki Shinojima, Takashi Yamada, Hideaki Kimura, Yasuhiko Ishikawa, Kazumi Wada, and Koji Yamada »View Author Affiliations
Hidetaka Nishi,1,*
Tai Tsuchizawa,1
Rai Kou,1
Hiroyuki Shinojima,1
Takashi Yamada,2
Hideaki Kimura,2
Yasuhiko Ishikawa,3
Kazumi Wada,3
and Koji Yamada1
1NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, 243-0198, Japan 2NTT Access Network Service Systems Laboratories, NTT corporation, 1-1 Hikari-no-oka, Yokosuka, Kanagawa, 239-0847, Japan 3Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan *Corresponding author: nishi.hidetaka@lab.ntt.co.jp |
Optics Express, Vol. 20, Issue 8, pp. 9312-9321 (2012)
http://dx.doi.org/10.1364/OE.20.009312
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Abstract
On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.
© 2012 OSA
OCIS Codes
(230.3120) Optical devices : Integrated optics devices
(250.3140) Optoelectronics : Integrated optoelectronic circuits
ToC Category:
Integrated Optics
History
Original Manuscript: February 21, 2012
Revised Manuscript: March 25, 2012
Manuscript Accepted: March 27, 2012
Published: April 6, 2012
Citation
Hidetaka Nishi, Tai Tsuchizawa, Rai Kou, Hiroyuki Shinojima, Takashi Yamada, Hideaki Kimura, Yasuhiko Ishikawa, Kazumi Wada, and Koji Yamada, "Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver," Opt. Express 20, 9312-9321 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-8-9312
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- C. Doerr, L. Chen, L. Buhl, and Y. Chen, “Eight-channel SiO2/Si3N4/Si/Ge CWDM receiver,” IEEE Photon. Technol. Lett.23, 1201–1203 (2011). [CrossRef]
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- J. Liu, D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. Danielson, J. Michel, and L. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett.87, 011110 (2005). [CrossRef]
- G. Masini, G. Capellini, J. Witzens, and C. Gunn, “A four-channel, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetectors,” in Optical Fiber Communication Conference (OFC, 2007), PDP312.
- R. Nagarajan, M. Kato, S. Hurtt, A. Dentai, J. Pleumeekers, P. Evans, M. Missey, R. Muthia, A. Chen, D. Lambert, P. Chavarkar, A. Mathur, J. Bäck, S. Murthy, R. Salvatore, C. Joyner, J. Rossi, R. Schneider, M. Ziari, F. Kish, and D. Welch, “Monolithic, 10 and 40 channel InP Receiver photonic integrated circits with on-chip amplification,” in Optical Fiber Communication Conference (OFC, 2007), PDP32.
- R. Nagarajan, M. Kato, S. Hurtt, A. Dentai, J. Pleumeekers, P. Evans, M. Missey, R. Muthia, A. Chen, D. Lambert, P. Chavarkar, A. Mathur, J. Bäck, S. Murthy, R. Salvatore, C. Joyner, J. Rossi, R. Schneider, M. Ziari, F. Kish, and D. Welch, “Monolithic, 10 and 40 channel InP Receiver photonic integrated circits with on-chip amplification,” in Optical Fiber Communication Conference (OFC, 2007), PDP32.
- L. Chen, C. Doerr, L. Buhl, Y. Baeyens, and R. Aroca, “Monolithically integrated 40-wavelength demultiplexer and photodetector array on silicon,” IEEE Photon. Technol. Lett.23, 869–871 (2011). [CrossRef]
- C. Doerr, L. Chen, L. Buhl, and Y. Chen, “Eight-channel SiO2/Si3N4/Si/Ge CWDM receiver,” IEEE Photon. Technol. Lett.23, 1201–1203 (2011). [CrossRef]
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