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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 9 — Apr. 23, 2012
  • pp: 9501–9515

Superradiance dynamics in semiconductor laser diode structures

D. L. Boiko and P. P. Vasil’ev  »View Author Affiliations


Optics Express, Vol. 20, Issue 9, pp. 9501-9515 (2012)
http://dx.doi.org/10.1364/OE.20.009501


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Abstract

We analyze theoretically the superradiant emission (SR) in semiconductor edge-emitting laser heterostructures using InGaN/GaN heterostructure quantum well (QW) as a model system. The generation of superradiant pulses as short as 500 fs at peak powers of over 200 W has been predicted for InGaN/GaN heterostructure QWs with the peak emission in the blue/violet wavelength range. Numerical simulations based on semiclassical traveling wave Maxwell-Bloch equations predict building up of macroscopic coherences in the ensemble of electrons and holes during SR pulse formation. We show that SR is covered by the Ginzburg-Landau equation for a phase transition to macroscopically coherent state of matter. The presented theory is applicable to other semiconductor materials.

© 2012 OSA

OCIS Codes
(140.6630) Lasers and laser optics : Superradiance, superfluorescence
(270.6630) Quantum optics : Superradiance, superfluorescence
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Quantum Optics

History
Original Manuscript: November 9, 2011
Revised Manuscript: February 21, 2012
Manuscript Accepted: March 19, 2012
Published: April 11, 2012

Citation
D. L. Boiko and P. P. Vasil’ev, "Superradiance dynamics in semiconductor laser diode structures," Opt. Express 20, 9501-9515 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-9-9501


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