Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation

doi:10.1364/OE.20.00A190

Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation

Shu-Yen Liu, J. K. Sheu, M. L. Lee, Yu-Chuan Lin, S. J. Tu, F. W. Huang, and W. C. Lai »View Author Affiliations

Optics Express, Vol. 20, Issue S2, pp. A190-A196 (2012)
http://dx.doi.org/10.1364/OE.20.00A190

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Abstract

In this study, we demonstrated photoelectrochemical (PEC) hydrogen generation using p-GaN photoelectrodes associated with immersed finger-type indium tin oxide (IF-ITO) ohmic contacts. The IF-ITO/p-GaN photoelectrode scheme exhibits higher photocurrent and gas generation rate compared with p-GaN photoelectrodes without IF-ITO ohmic contacts. In addition, the critical external bias for detectable hydrogen generation can be effectively reduced by the use of IF-ITO ohmic contacts. This finding can be attributed to the greatly uniform distribution of the IF-ITO/p-GaN photoelectrode applied fields over the whole working area. As a result, the collection efficiency of photo-generated holes by electrode contacts is higher than that of p-GaN photoelectrodes without IF-ITO contacts. Microscopy revealed a tiny change on the p-GaN surfaces before and after hydrogen generation. In contrast, photoelectrodes composed of n-GaN have a short lifetime due to n-GaN corrosion during hydrogen generation. Findings of this study indicate that the ITO finger contacts on p-GaN layer is a potential candidate as photoelectrodes for PEC hydrogen generation.

OCIS Codes
(310.3840) Thin films : Materials and process characterization
(310.4925) Thin films : Other properties (stress, chemical, etc.)
(310.6845) Thin films : Thin film devices and applications
(310.7005) Thin films : Transparent conductive coatings

ToC Category:
Solar Fuel

History
Original Manuscript: November 11, 2011
Revised Manuscript: January 4, 2012
Manuscript Accepted: January 5, 2012
Published: January 11, 2012

Citation
Shu-Yen Liu, J. K. Sheu, M. L. Lee, Yu-Chuan Lin, S. J. Tu, F. W. Huang, and W. C. Lai, "Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation," Opt. Express 20, A190-A196 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-S2-A190

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References

A. J. Nozik and R. Memming, “Physical chemistry of semiconductor-liquid interfaces,” J. Phys. Chem.100(31), 13061–13078 (1996). [CrossRef]
J. A. Turner, “A realizable renewable energy future,” Science285(5428), 687–689 (1999). [CrossRef] [PubMed]
A. Fujishima and K. Honda, “Electrochemical photolysis of water at a semiconductor electrode,” Nature238(5358), 37–38 (1972). [CrossRef] [PubMed]
A. J. Nozik, “Electrode materials for photoelectrochemical devices,” J. Cryst. Growth39(1), 200–209 (1977). [CrossRef]
R. C. Kainthla and B. Zelenay, “Significant efficiency increase in self-driven photoelectrochemical cell for water photoelectrolysis,” J. Electrochem. Soc.134(4), 841 (1987). [CrossRef]
W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett.92(26), 262110 (2008). [CrossRef]
J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett.93(16), 162107 (2008). [CrossRef]
K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc.154(2), B175–B179 (2007). [CrossRef]
K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett.96(5), 052110 (2010). [CrossRef]
I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett.91(9), 093519 (2007). [CrossRef]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett.80(25), 4741 (2002). [CrossRef]
R. Dimitrova, L. Catalan, D. Alexandrov, and A. Chen, “Evaluation of GaN and In0.2Ga0.8N semiconductors as potentiometric anion selective electrodes,” Electroanalysis19(17), 1799–1806 (2007). [CrossRef]
M. G. Walter, E. L. Warren, J. R. McKone, S. W. Boettcher, Q. Mi, E. A. Santori, and N. S. Lewis, “Solar water splitting cells,” Chem. Rev.110(11), 6446–6473 (2010). [CrossRef] [PubMed]
K. Fujii and K. Ohkawa, “Photoelectrochemical properties of p-Type GaN in comparison with n-Type GaN,” Jpn. J. Appl. Phys.44(28), L909–L911 (2005). [CrossRef]
S. Y. Liu, J. K. Sheu, J. C. Ye, S. J. Tu, C. K. Hsu, M. L. Lee, C. H. Kuo, and W. C. Lai, “Characterization of n-GaN with naturally textured surface for photoelectrochemical hydrogen generation,” J. Electrochem. Soc.157(12), H1106–H1109 (2010). [CrossRef]
S. Y. Liu, J. K. Sheu, C. K. Tseng, J. C. Ye, K. H. Chang, M. L. Lee, and W. C. Lai, “Improved hydrogen gas generation rate of n-GaN photoelectrode with SiO2 protection layer on the ohmic contacts from the electrolyte,” J. Electrochem. Soc.157(2), B266–B268 (2010). [CrossRef]
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “Indium tin oxide ohmic contact to highly doped n-GaN,” Solid-State Electron.43(11), 2081–2084 (1999). [CrossRef]
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Abare, A. C.
Ager, J. W.
Alexandrov, D.
Aryal, K.
Boettcher, S. W.
Buchinsky, O.
Casey, H. C.
Catalan, L.
Chang, C. M.
Chang, K. H.
Chen, A.
Chen, D.
Chi, G. C.
Cohen, D.
Cohen, D. A.
Coldren, L. A.
DenBaars, S. P.
Dimitrova, R.
Fujii, K.
Fujishima, A.
Haller, E. E.
Hansen, M.
Hirako, A.
Honda, K.
Hsu, C. K.
Ito, T.
Iwaki, Y.
Jiang, H. X.
Jou, M. J.
Kainthla, R. C.
Keller, B. P.
Kolbas, R. M.
Kuo, C. H.
Lai, W. C.
Lal, R.
Lee, J. H.
Lee, M. L.
Lewis, N. S.
Li, J.
Li, Z.
Lin, J. Y.
Liu, B.
Liu, C. C.
Liu, S. Y.
Lu, H.
Luo, W.
Margalith, T.
McKone, J. R.
Memming, R.
Mi, Q.
Mishra, U.
Mishra, U. K.
Muth, J. F.
Nakamura, S.
Nozik, A. J.
Ohkawa, K.
Ono, M.
Pantha, B. N.
Santori, E. A.
Schaff, W. J.
Sheu, J. K.
Shmagin, I. K.
Su, Y. K.
Tseng, C. K.
Tu, S. J.
Turner, J. A.
Waki, I.
Walter, M. G.
Walukiewicz, W.
Warren, E. L.
Wu, J.
Xie, Z.
Ye, J. C.
Yu, K. M.
Zelenay, B.
Zhang, R.
Zou, Z.

Appl. Phys. Lett.

K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett.96(5), 052110 (2010). [CrossRef]
I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett.91(9), 093519 (2007). [CrossRef]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett.80(25), 4741 (2002). [CrossRef]
W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett.92(26), 262110 (2008). [CrossRef]
J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett.93(16), 162107 (2008). [CrossRef]
T. Margalith, O. Buchinsky, D. A. Cohen, A. C. Abare, M. Hansen, S. P. DenBaars, and L. A. Coldren, “Indium tin oxide contacts to gallium nitride optoelectronic devices,” Appl. Phys. Lett.74(26), 3930 (1999). [CrossRef]
J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements,” Appl. Phys. Lett.71(18), 2572 (1997).

Chem. Rev.

M. G. Walter, E. L. Warren, J. R. McKone, S. W. Boettcher, Q. Mi, E. A. Santori, and N. S. Lewis, “Solar water splitting cells,” Chem. Rev.110(11), 6446–6473 (2010). [CrossRef] [PubMed]

Electroanalysis

R. Dimitrova, L. Catalan, D. Alexandrov, and A. Chen, “Evaluation of GaN and In0.2Ga0.8N semiconductors as potentiometric anion selective electrodes,” Electroanalysis19(17), 1799–1806 (2007). [CrossRef]

J. Cryst. Growth

A. J. Nozik, “Electrode materials for photoelectrochemical devices,” J. Cryst. Growth39(1), 200–209 (1977). [CrossRef]

J. Electrochem. Soc.

R. C. Kainthla and B. Zelenay, “Significant efficiency increase in self-driven photoelectrochemical cell for water photoelectrolysis,” J. Electrochem. Soc.134(4), 841 (1987). [CrossRef]
K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc.154(2), B175–B179 (2007). [CrossRef]
S. Y. Liu, J. K. Sheu, J. C. Ye, S. J. Tu, C. K. Hsu, M. L. Lee, C. H. Kuo, and W. C. Lai, “Characterization of n-GaN with naturally textured surface for photoelectrochemical hydrogen generation,” J. Electrochem. Soc.157(12), H1106–H1109 (2010). [CrossRef]
S. Y. Liu, J. K. Sheu, C. K. Tseng, J. C. Ye, K. H. Chang, M. L. Lee, and W. C. Lai, “Improved hydrogen gas generation rate of n-GaN photoelectrode with SiO2 protection layer on the ohmic contacts from the electrolyte,” J. Electrochem. Soc.157(2), B266–B268 (2010). [CrossRef]

J. Phys. Chem.

A. J. Nozik and R. Memming, “Physical chemistry of semiconductor-liquid interfaces,” J. Phys. Chem.100(31), 13061–13078 (1996). [CrossRef]

Jpn. J. Appl. Phys.

K. Fujii and K. Ohkawa, “Photoelectrochemical properties of p-Type GaN in comparison with n-Type GaN,” Jpn. J. Appl. Phys.44(28), L909–L911 (2005). [CrossRef]

Nature

A. Fujishima and K. Honda, “Electrochemical photolysis of water at a semiconductor electrode,” Nature238(5358), 37–38 (1972). [CrossRef] [PubMed]

Science

J. A. Turner, “A realizable renewable energy future,” Science285(5428), 687–689 (1999). [CrossRef] [PubMed]

Solid-State Electron.

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “Indium tin oxide ohmic contact to highly doped n-GaN,” Solid-State Electron.43(11), 2081–2084 (1999). [CrossRef]

2010, Aryal, Appl. Phys. Lett.
2010, Walter, Chem. Rev.
2010, Liu, J. Electrochem. Soc.
2010, Liu, J. Electrochem. Soc.
2008, Luo, Appl. Phys. Lett.
2008, Li, Appl. Phys. Lett.
2007, Fujii, J. Electrochem. Soc.
2007, Waki, Appl. Phys. Lett.
2007, Dimitrova, Electroanalysis
2005, Fujii, Jpn. J. Appl. Phys.
2002, Wu, Appl. Phys. Lett.
1999, Turner, Science
1999, Sheu, Solid-State Electron.
1999, Margalith, Appl. Phys. Lett.
1997, Muth, Appl. Phys. Lett.
1996, Nozik, J. Phys. Chem.
1987, Kainthla, J. Electrochem. Soc.
1977, Nozik, J. Cryst. Growth
1972, Fujishima, Nature

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[1] A. J. Nozik and R. Memming, “Physical chemistry of semiconductor-liquid interfaces,” J. Phys. Chem.100(31), 13061–13078 (1996). [CrossRef]

[2] J. A. Turner, “A realizable renewable energy future,” Science285(5428), 687–689 (1999). [CrossRef] [PubMed]

[3] A. Fujishima and K. Honda, “Electrochemical photolysis of water at a semiconductor electrode,” Nature238(5358), 37–38 (1972). [CrossRef] [PubMed]

[4] A. J. Nozik, “Electrode materials for photoelectrochemical devices,” J. Cryst. Growth39(1), 200–209 (1977). [CrossRef]

[5] R. C. Kainthla and B. Zelenay, “Significant efficiency increase in self-driven photoelectrochemical cell for water photoelectrolysis,” J. Electrochem. Soc.134(4), 841 (1987). [CrossRef]

[6] W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett.92(26), 262110 (2008). [CrossRef]

[7] J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett.93(16), 162107 (2008). [CrossRef]

[8] K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc.154(2), B175–B179 (2007). [CrossRef]

[9] K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett.96(5), 052110 (2010). [CrossRef]

[10] I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett.91(9), 093519 (2007). [CrossRef]

[11] J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett.80(25), 4741 (2002). [CrossRef]

[12] R. Dimitrova, L. Catalan, D. Alexandrov, and A. Chen, “Evaluation of GaN and In0.2Ga0.8N semiconductors as potentiometric anion selective electrodes,” Electroanalysis19(17), 1799–1806 (2007). [CrossRef]

[13] M. G. Walter, E. L. Warren, J. R. McKone, S. W. Boettcher, Q. Mi, E. A. Santori, and N. S. Lewis, “Solar water splitting cells,” Chem. Rev.110(11), 6446–6473 (2010). [CrossRef] [PubMed]

[14] K. Fujii and K. Ohkawa, “Photoelectrochemical properties of p-Type GaN in comparison with n-Type GaN,” Jpn. J. Appl. Phys.44(28), L909–L911 (2005). [CrossRef]

[15] S. Y. Liu, J. K. Sheu, J. C. Ye, S. J. Tu, C. K. Hsu, M. L. Lee, C. H. Kuo, and W. C. Lai, “Characterization of n-GaN with naturally textured surface for photoelectrochemical hydrogen generation,” J. Electrochem. Soc.157(12), H1106–H1109 (2010). [CrossRef]

[16] S. Y. Liu, J. K. Sheu, C. K. Tseng, J. C. Ye, K. H. Chang, M. L. Lee, and W. C. Lai, “Improved hydrogen gas generation rate of n-GaN photoelectrode with SiO2 protection layer on the ohmic contacts from the electrolyte,” J. Electrochem. Soc.157(2), B266–B268 (2010). [CrossRef]

[17] J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “Indium tin oxide ohmic contact to highly doped n-GaN,” Solid-State Electron.43(11), 2081–2084 (1999). [CrossRef]

[18] T. Margalith, O. Buchinsky, D. A. Cohen, A. C. Abare, M. Hansen, S. P. DenBaars, and L. A. Coldren, “Indium tin oxide contacts to gallium nitride optoelectronic devices,” Appl. Phys. Lett.74(26), 3930 (1999). [CrossRef]

[19] J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements,” Appl. Phys. Lett.71(18), 2572 (1997).

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Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation