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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 20, Iss. S2 — Mar. 12, 2012
  • pp: A270–A277

Light-emitting devices with tunable color from ZnO nanorods grown on InGaN/GaN multiple quantum wells

Han-Yu Shih, Shih-Hao Cheng, Jyong-Kuen Lian, Tai-Yuan Lin, and Yang-Fang Chen  »View Author Affiliations

Optics Express, Vol. 20, Issue S2, pp. A270-A277 (2012)

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Based on the composite consisting of ZnO nanorods (NRs) grown on InGaN/GaN multiple quantum wells (MQWs), we have demonstrated a novel light-emitting device (LED) that has the capability to emit dual beam radiations. Interestingly, the relative intensity between the dual emissions is able to be manipulated by their polarizations. The underlying mechanism can be well understood in terms of the anisotropic optical properties arising from the geometric structures of constituent nanoscale materials. The results shown here may be extended to many other nanocomposite systems and pave a new pathway to create LEDs with tunable properties.

© 2012 OSA

OCIS Codes
(230.5440) Optical devices : Polarization-selective devices
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Light-Emitting Diodes

Original Manuscript: November 28, 2011
Revised Manuscript: February 3, 2012
Manuscript Accepted: February 8, 2012
Published: February 15, 2012

Han-Yu Shih, Shih-Hao Cheng, Jyong-Kuen Lian, Tai-Yuan Lin, and Yang-Fang Chen, "Light-emitting devices with tunable color from ZnO nanorods grown on InGaN/GaN multiple quantum wells," Opt. Express 20, A270-A277 (2012)

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