OSA's Digital Library

Energy Express

Energy Express

  • Editor: Bernard Kippelen
  • Vol. 20, Iss. S2 — Mar. 12, 2012
  • pp: A270–A277

Light-emitting devices with tunable color from ZnO nanorods grown on InGaN/GaN multiple quantum wells

Han-Yu Shih, Shih-Hao Cheng, Jyong-Kuen Lian, Tai-Yuan Lin, and Yang-Fang Chen  »View Author Affiliations


Optics Express, Vol. 20, Issue S2, pp. A270-A277 (2012)
http://dx.doi.org/10.1364/OE.20.00A270


View Full Text Article

Enhanced HTML    Acrobat PDF (1090 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

Based on the composite consisting of ZnO nanorods (NRs) grown on InGaN/GaN multiple quantum wells (MQWs), we have demonstrated a novel light-emitting device (LED) that has the capability to emit dual beam radiations. Interestingly, the relative intensity between the dual emissions is able to be manipulated by their polarizations. The underlying mechanism can be well understood in terms of the anisotropic optical properties arising from the geometric structures of constituent nanoscale materials. The results shown here may be extended to many other nanocomposite systems and pave a new pathway to create LEDs with tunable properties.

© 2012 OSA

OCIS Codes
(230.5440) Optical devices : Polarization-selective devices
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: November 28, 2011
Revised Manuscript: February 3, 2012
Manuscript Accepted: February 8, 2012
Published: February 15, 2012

Citation
Han-Yu Shih, Shih-Hao Cheng, Jyong-Kuen Lian, Tai-Yuan Lin, and Yang-Fang Chen, "Light-emitting devices with tunable color from ZnO nanorods grown on InGaN/GaN multiple quantum wells," Opt. Express 20, A270-A277 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-S2-A270


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, “UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering,” Adv. Mater. (Deerfield Beach Fla.)18(20), 2720–2724 (2006). [CrossRef]
  2. H. K. Fu, C. L. Cheng, C. H. Wang, T. Y. Lin, and Y. F. Chen, “Selective angle electroluminescence of light-emitting diodes based on nanostructured ZnO/GaN heterojunctions,” Adv. Funct. Mater.19(21), 3471–3475 (2009). [CrossRef]
  3. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005). [CrossRef]
  4. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science292(5523), 1897–1899 (2001). [CrossRef] [PubMed]
  5. N. E. Hsu, W. K. Hung, and Y. F. Chen, “Origin of defect emission identified by polarized luminescence from aligned ZnO nanorods,” J. Appl. Phys.96(8), 4671–4673 (2004). [CrossRef]
  6. M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, and J. Cho, “Origin of defect emission identified by polarized luminescence from aligned ZnO nanorods,” Appl. Phys. Lett.91, 051117 (2007). [CrossRef]
  7. H. S. Chen, C. W. Chen, C. H. Wang, F. C. Chu, C. Y. Chao, C. C. Kang, P. T. Chou, and Y. F. Chen, “Color-tunable light-emitting device based on the mixture of CdSe nanorods and dots embedded in liquid-crystal cells,” J. Phys. Chem. C114(17), 7995–7998 (2010). [CrossRef]
  8. N. Kikuchi, “Analysis of signal degree of polarization degradation used as control signal for optical polarization mode dispersion compensation,” J. Lightwave Technol.19(4), 480–486 (2001). [CrossRef]
  9. J. R. Law, “Color selection polarizing beam splitter,” U. S. Patent 3497283 (1970).
  10. S. J. Savory, “Digital filters for coherent optical receivers,” Opt. Express16(2), 804–817 (2008). [CrossRef] [PubMed]
  11. C. Bayram, F. H. Teherani, D. J. Rogers, and M. Razeghi, “A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN,” Appl. Phys. Lett.93(8), 081111 (2008). [CrossRef]
  12. M. Guo, P. Diao, and S. Cai, “Hydrothermal growth of well-aligned ZnO nanorod arrays: Dependence of morphology and alignment ordering upon preparing conditions,” J. Solid State Chem.178(6), 1864–1873 (2005). [CrossRef]
  13. C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett.90(15), 151122 (2007). [CrossRef]
  14. Y. T. Moon, D. J. Kim, K. M. Song, I. H. Lee, M. S. Yi, D. Y. Noh, C. J. Choi, T. Y. Seong, and S. J. Park, “Optical and structural studies of phase separation in InGaN film grown by MOCVD,” Phys. Status Solidi, B Basic Res.216(1), 167–170 (1999). [CrossRef]
  15. J. von Pezold and P. D. Bristowe, “Atomic structure and electronic properties of the GaN/ZnO (0001) interface,” J. Mater. Sci.40(12), 3051–3057 (2005). [CrossRef]
  16. K. W. Jang, D. C. Oh, T. Minegishi, H. Suzuki, T. Hanada, H. Makino, M. W. Cho, T. Yao, and S. K. Hong, “ZnO/GaN heteroepitaxy,” Mater. Res. Soc. Symp. Proc. 829, B10.3.1–B10.3.12 (2005).
  17. E. Fred Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge University Press, 2006), Chap. 4.
  18. E. H. Park, D. N. H. Kang, I. T. Ferguson, S. K. Jeon, J. S. Park, and T. K. Yoo, “The effect of silicon doping in the selected barrier on the electroluminescence of InGaN/GaN multiquantum well light emitting diode,” Appl. Phys. Lett.90(3), 031102 (2007). [CrossRef]
  19. Z. Z. Bandic, P. M. Bridger, E. C. Piquette, and T. C. McGill, “Minority carrier diffusion length and lifetime in GaN,” Appl. Phys. Lett.72(24), 3166–3168 (1998). [CrossRef]
  20. J. Y. Wang, C. Y. Lee, Y. T. Chen, C. T. Chen, Y. L. Chen, C. F. Lin, and Y. F. Chen, “Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions,” Appl. Phys. Lett.95(13), 131117 (2009). [CrossRef]
  21. E. Hecht, Optics, 4th ed. (Addison Wesley, 2002), Chap. 8.
  22. T. Y. Lin, “Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett.82(6), 880–882 (2003). [CrossRef]
  23. K. J. Wu, K. C. Chu, C. Y. Chao, Y. F. Chen, C. W. Lai, C. C. Kang, C. Y. Chen, and P. T. Chou, “CdS nanorods imbedded in liquid crystal cells for smart optoelectronic devices,” Nano Lett.7(7), 1908–1913 (2007). [CrossRef]
  24. H. K. Fu, C. W. Chen, C. H. Wang, T. T. Chen, and Y. F. Chen, “Creating optical anisotropy of CdSe/ZnS quantum dots by coupling to surface plasmon polariton resonance of a metal grating,” Opt. Express16(9), 6361–6367 (2008). [CrossRef] [PubMed]
  25. N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett.86(11), 111101 (2005). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1 Fig. 2 Fig. 3
 
Fig. 4 Fig. 5
 

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited