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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 20, Iss. S2 — Mar. 12, 2012
  • pp: A327–A332

Spectral optical properties of Cu2ZnSnS4 thin film between 0.73 and 6.5 eV

Jian Li, Hui Du, John Yarbrough, Andrew Norman, Kim Jones, Glenn Teeter, Fred Lewis Terry, Jr., and Dean Levi  »View Author Affiliations

Optics Express, Vol. 20, Issue S2, pp. A327-A332 (2012)

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A polycrystalline Cu2ZnSnS4 thin film was deposited on fused quartz by co-evaporation. The selected thickness was ~100 nm to avoid artifacts in its optical properties caused by thicker as-grown films. The composition and phase of the film were checked with x-ray fluorescence, Raman shift spectroscopy, scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. An improved spectroscopic ellipsometry methodology with two-side measurement geometries was applied to extract the complex dielectric function ε = ε1 + iε2 of the Cu2ZnSnS4 thin film between 0.73 and 6.5 eV. Five critical points were observed, at 1.32 (fundamental band gap), 2.92, 3.92, 4.96, and 5.62 eV, respectively. The ε spectra are in reasonable agreement with those from theoretical calculations.

© 2012 OSA

OCIS Codes
(120.0120) Instrumentation, measurement, and metrology : Instrumentation, measurement, and metrology
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(160.2100) Materials : Electro-optical materials
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Thin Films

Original Manuscript: January 19, 2012
Revised Manuscript: February 13, 2012
Manuscript Accepted: February 17, 2012
Published: March 7, 2012

Jian Li, Hui Du, John Yarbrough, Andrew Norman, Kim Jones, Glenn Teeter, Fred Lewis Terry, and Dean Levi, "Spectral optical properties of Cu2ZnSnS4 thin film between 0.73 and 6.5 eV," Opt. Express 20, A327-A332 (2012)

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