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Energy Express

Energy Express

  • Editor: Bernard Kippelen
  • Vol. 20, Iss. S5 — Sep. 10, 2012
  • pp: A630–A640

Light extraction efficiency of GaN-based LED with pyramid texture by using ray path analysis

Jui-Wen Pan and Chia-Shen Wang  »View Author Affiliations

Optics Express, Vol. 20, Issue S5, pp. A630-A640 (2012)

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We study three different gallium-nitride (GaN) based light emitting diode (LED) cases based on the different locations of the pyramid textures. In case 1, the pyramid texture is located on the sapphire top surface, in case 2, the pyramid texture is locate on the P-GaN top surface, while in case 3, the pyramid texture is located on both the sapphire and P-GaN top surfaces. We study the relationship between the light extraction efficiency (LEE) and angle of slant of the pyramid texture. The optimization of total LEE was highest for case 3 among the three cases. Moreover, the seven escape paths along which most of the escaped photon flux propagated were selected in a simulation of the LEDs. The seven escape paths were used to estimate the slant angle for the optimization of LEE and to precisely analyze the photon escape path.

© 2012 OSA

OCIS Codes
(220.4000) Optical design and fabrication : Microstructure fabrication
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Light-Emitting Diodes

Original Manuscript: May 17, 2012
Revised Manuscript: June 20, 2012
Manuscript Accepted: June 30, 2012
Published: July 13, 2012

Jui-Wen Pan and Chia-Shen Wang, "Light extraction efficiency of GaN-based LED with pyramid texture by using ray path analysis," Opt. Express 20, A630-A640 (2012)

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