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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 20, Iss. S5 — Sep. 10, 2012
  • pp: A669–A677

Solution-processed Li–Al layered-double-hydroxide platelet structures for high efficiency InGaN light emitting diodes

Chia-Feng Lin, Peng-Han Tsai, Zhi-Yu Lin, Jun-Yen Uan, Chun-Min Lin, Chung-Chieh Yang, and Bing-Cheng Shieh  »View Author Affiliations

Optics Express, Vol. 20, Issue S5, pp. A669-A677 (2012)

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High-oriented Li–Al layered double hydroxide (LDH) films were grown on an InGaN light-emitting diode (LED) structures by immersing in an aqueous alkaline Al3+- and Li+-containing solution. The stand upward and adjacent Li-Al LDH platelet structure was formed on the LED structure as a textured film to increase the light extraction efficiency. The light output power of the LED structure with the Li-Al LDH platelet structure had a 31% enhancement compared with a conventional LED structure at 20 mA. The reverse leakage currents, at −5V, were measured at −2.3 × 10−8A and −1.0 × 10−10A for the LED structures without and with the LDH film that indicated the Li-Al LDH film had the insulated property acted a passivation layer that had potential to replace the conventional SiO2 and Si3N4 passivation layers. The Li-Al LDH layer had the textured platelet structure and the insulated property covering whole the LED surface that has potential for high efficiency InGaN LED applications.

© 2012 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Light-Emitting Diodes

Original Manuscript: April 12, 2012
Revised Manuscript: June 5, 2012
Manuscript Accepted: July 27, 2012
Published: August 2, 2012

Chia-Feng Lin, Peng-Han Tsai, Zhi-Yu Lin, Jun-Yen Uan, Chun-Min Lin, Chung-Chieh Yang, and Bing-Cheng Shieh, "Solution-processed Li–Al layered-double-hydroxide platelet structures for high efficiency InGaN light emitting diodes," Opt. Express 20, A669-A677 (2012)

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