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Conformally direct imprinted inorganic surface corrugation for light extraction enhancement of light emitting diodesSarah Kim, Sang-Mook Kim, Hyeong-Ho Park, Dae-Geun Choi, Jae-Woo Jung, Jun Ho Jeong, and Jong-Ryul Jeong »View Author Affiliations
Sarah Kim,1
Sang-Mook Kim,2
Hyeong-Ho Park,3
Dae-Geun Choi,1
Jae-Woo Jung,4
Jun Ho Jeong,1,5
and Jong-Ryul Jeong4,6
1Nanomechanical System Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon 305-343 Korea 2Korea Photonic Technology Institute, Gwangju 500-460 Korea 3Patterning Process Department, Nano Process Division, Korea Advanced Nano Fab Center, Suwon 443-270 Korea 4Department of Materials Science and Engineering, Graduate School of Green Energy Technology, Chungnam National University, Daejeon 305-764 Korea 5jhjeong@kimm.re.kr |
Optics Express, Vol. 20, Issue S5, pp. A713-A721 (2012)
http://dx.doi.org/10.1364/OE.20.00A713
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Abstract
We describe the fabrication of corrugated inorganic oxide surface via direct single step conformal nanoimprinting to achieve enhanced light extraction in light emitting diodes (LEDs). Nanoscale zinc oxide (ZnO) and indium tin oxide (ITO) corrugated layer were created on a nonplanar GaN LED surface including metal electrode using ultraviolet (UV) assisted conformal nanoimprinting and subsequent inductively coupled plasma reactive ion etching (ICP-RIE) treatment. The total output powers of the surface corrugated LEDs increased by 45.6% for the patterned sapphire substrate LED and 41.9% for the flat c-plane substrate LED without any degradation of the electrical characteristics. The role of the nanoscale corrugations on the light extraction efficiency enhancement was examined using 3-dimensional finite-difference time-domain (FDTD) analysis. It was found that light scattering by subwavelength scale surface corrugation plays important role to redirect the trapped light into radiative modes. This straightforward inorganic oxide imprint method with inherent flexibility provides an efficient way to generate nanoscale surface textures for the production of high power LEDs and optoelectronic devices.
© 2012 OSA
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(160.4236) Materials : Nanomaterials
ToC Category:
Light-Emitting Diodes
History
Original Manuscript: May 30, 2012
Revised Manuscript: August 5, 2012
Manuscript Accepted: August 15, 2012
Published: August 21, 2012
Citation
Sarah Kim, Sang-Mook Kim, Hyeong-Ho Park, Dae-Geun Choi, Jae-Woo Jung, Jun Ho Jeong, and Jong-Ryul Jeong, "Conformally direct imprinted inorganic surface corrugation for light extraction enhancement of light emitting diodes," Opt. Express 20, A713-A721 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-S5-A713
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References
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Cho, J.
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Choi, C. K.
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- J. Choi and M. Terazima, “Photochemical reaction of 2-nitrobenzaldehyde by monitoring the diffusion coefficient,” J. Phys. Chem. B107(35), 9552–9557 (2003). [CrossRef]
Choi, J.-H.
- H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010). [CrossRef]
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- S. Y. Chou, P. R. Krauss, and P. J. Renstrom, “Imprint lithography with 25-nanometer resolution,” Science272, 85–87 (1996). [CrossRef]
- M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999). [CrossRef]
- M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999). [CrossRef]
- E. A. Costner, M. W. Lin, W.-L. Jen, and C. G. Willson, “Nanoimprint lithography materials development for semiconductor device fabrication,” Annu. Rev. Mater. Res.39, 155–180 (2009). [CrossRef]
- M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999). [CrossRef]
- S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics3, 180–182 (2009). [CrossRef]
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Annu. Rev. Mater. Res.
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Appl. Phys. Lett.
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