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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 20, Iss. S5 — Sep. 10, 2012
  • pp: A765–A776

Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes

Peng Zhao and Hongping Zhao  »View Author Affiliations

Optics Express, Vol. 20, Issue S5, pp. A765-A776 (2012)

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The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The three dimensional finite difference time domain (3D-FDTD) method was used to calculate the light extraction efficiency for the InGaN QWs LEDs emitting at 460nm and 550 nm, respectively. The effects of the GaN micro-dome feature size and the p-GaN layer thickness on the light extraction efficiency were studied systematically. Studies indicate that the p-GaN layer thickness is critical for optimizing the TFFC LED light extraction efficiency. Significant enhancement of the light extraction efficiency (2.5-2.7 times for λpeak = 460nm and 2.7-2.8 times for λpeak = 550nm) is achievable from TFFC InGaN QWs LEDs with optimized GaN micro-dome diameter and height.

© 2012 OSA

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Light-Emitting Diodes

Original Manuscript: June 26, 2012
Revised Manuscript: August 23, 2012
Manuscript Accepted: August 27, 2012
Published: September 7, 2012

Peng Zhao and Hongping Zhao, "Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes," Opt. Express 20, A765-A776 (2012)

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