Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes

doi:10.1364/OE.20.00A765

Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes

Peng Zhao and Hongping Zhao »View Author Affiliations

Optics Express, Vol. 20, Issue S5, pp. A765-A776 (2012)
http://dx.doi.org/10.1364/OE.20.00A765

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Abstract

The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The three dimensional finite difference time domain (3D-FDTD) method was used to calculate the light extraction efficiency for the InGaN QWs LEDs emitting at 460nm and 550 nm, respectively. The effects of the GaN micro-dome feature size and the p-GaN layer thickness on the light extraction efficiency were studied systematically. Studies indicate that the p-GaN layer thickness is critical for optimizing the TFFC LED light extraction efficiency. Significant enhancement of the light extraction efficiency (2.5-2.7 times for λ_peak = 460nm and 2.7-2.8 times for λ_peak = 550nm) is achievable from TFFC InGaN QWs LEDs with optimized GaN micro-dome diameter and height.

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: June 26, 2012
Revised Manuscript: August 23, 2012
Manuscript Accepted: August 27, 2012
Published: September 7, 2012

Citation
Peng Zhao and Hongping Zhao, "Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes," Opt. Express 20, A765-A776 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-S5-A765

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References

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Misra, M. S.
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Appl. Phys. B

C.-H. Chan, A. Fischer, A. Martinez-Gil, P. Taillepierre, C.-C. Lee, S.-L. Yang, C.-H. Hou, H.-T. Chien, D.-P. Cai, K.-C. Hsu, and C.-C. Chen, “Anti-reflection layer formed by monolayer of microspheres,” Appl. Phys. B 100(3), 547–551 (2010). [CrossRef]

Appl. Phys. Lett.

Y. S. Choi, M. Iza, E. Matioli, G. Koblmüller, J. S. Speck, C. Weisbuch, and E. L. Hu, “2.5? microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process,” Appl. Phys. Lett. 91(6), 061120 (2007). [CrossRef]
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R. A. Arif, H. Zhao, and N. Tansu, “Type-II InGaN-GaNAs quantum wells for lasers applications,” Appl. Phys. Lett. 92(1), 011104 (2008). [CrossRef]
J. Park and Y. Kawakami, “Photoluminescence property of InGaN single quantum well with embedded AlGaN ? layer,” Appl. Phys. Lett. 88(20), 202107 (2006). [CrossRef]
S. H. Park, J. Park, and E. Yoon, “Optical gain in InGaN/GaN quantum well structures with embedded AlGaN ? layer,” Appl. Phys. Lett. 90(2), 023508 (2007). [CrossRef]
H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett. 97(13), 131114 (2010). [CrossRef]
R. J. Choi, Y. B. Hahn, H. W. Shim, M. S. Han, E. K. Suh, and H. J. Lee, “Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells,” Appl. Phys. Lett. 82(17), 2764–2766 (2003). [CrossRef]
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004). [CrossRef]
H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, “GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses,” Appl. Phys. Lett. 84(13), 2253–2255 (2004). [CrossRef]
Y.-K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett. 91(22), 221107 (2007). [CrossRef]
O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006). [CrossRef]
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C. Chu, F. Lai, J. Chu, C. Yu, C. Lin, H. Kuo, and S. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” Appl. Phys. Lett. 95, 3916–3922 (2004).
W. Y. Fu, K. K. Wong, and H. W. Choi, “Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography,” Appl. Phys. Lett. 95(13), 133125 (2009). [CrossRef]

Appl. Phys., A Mater. Sci. Process.

C. L. Tsai, G. C. Fan, and Y. S. Lee, “Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes,” Appl. Phys., A Mater. Sci. Process. 104(1), 319–323 (2011). [CrossRef]

IEEE J. Display Technol.

M. Krames, O. Shchekin, R. Mueller-Mach, G. Mueller, L. Zhou, G. Harbers, and M. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” IEEE J. Display Technol. 3(2), 160–175 (2007). [CrossRef]

IEEE J. Quantum Electron.

I. H. Brown, P. Blood, P. M. Smowton, J. D. Thomson, S. M. Olaizola, A. M. Fox, P. J. Parbrook, and W. W. Chow, “Time evolution of the screening of piezoelectric fields in InGaN quantum wells,” IEEE J. Quantum Electron. 42(12), 1202–1208 (2006). [CrossRef]
H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes,” IEEE J. Quantum Electron. 45(1), 66–78 (2009). [CrossRef]
S. H. Park, D. Ahn, and S. L. Chuang, “Electronic and optical properties of a- and m-plane Wurtzite InGaN/GaN quantum wells,” IEEE J. Quantum Electron. 43(12), 1175–1182 (2007). [CrossRef]
H. Benisty, H. De Neve, and C. Weisbuch, “Impact of planar microcavity effects on light extraction—Part I: Basic concepts and analytical trends,” IEEE J. Quantum Electron. 34(9), 1612–1631 (1998). [CrossRef]
S. L. Chuang, “Optical gain of strained wurtzite GaN quantum-well lasers,” IEEE J. Quantum Electron. 32(10), 1791–1800 (1996). [CrossRef]

IEEE J. Sel. Top. Quantum Electron.

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H. Zhao, R. A. Arif, and N. Tansu, “Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1104–1114 (2009). [CrossRef]

IEEE Photon. Technol. Lett.

J. Q. Xi, H. Luo, A. J. Pasquale, J. K. Kim, and E. F. Schubert, “Enhanced light extraction in GaInN light-emitting diode with pyramid reflector,” IEEE Photon. Technol. Lett. 18(22), 2347–2349 (2006). [CrossRef]

IEEE Photonics J.

N. Tansu, H. Zhao, G. Liu, X. H. Li, J. Zhang, H. Tong, and Y. K. Ee, “Breakthrough in photonics 2009: III-Photonics,” IEEE Photonics J. 2, 236–243 (2010).

IEEE Trans. Antenn. Propag.

K. Yee, “Numerical Solution of Initial Boundary Value Problem Involving Maxwell’s Equations in Isotropic Media,” IEEE Trans. Antenn. Propag. 14(3), 302–307 (1966). [CrossRef]

IEEE Trans. Electron. Dev.

H. Masui, S. Nakamura, S. P. DenBaars, and U. K. Mishra, “Nonpolar ands III-nitride light-emitting diodes: Achievements and challenges,” IEEE Trans. Electron. Dev. 57(1), 88–100 (2010). [CrossRef]

J. Appl. Phys.

C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,” J. Appl. Phys. 93(11), 9383–9385 (2003). [CrossRef]
H. Zhao and N. Tansu, “Optical gain characteristics of staggered InGaN quantum wells lasers,” J. Appl. Phys. 107(11), 113110 (2010). [CrossRef]
H. Zhao, R. A. Arif, and N. Tansu, “Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers,” J. Appl. Phys. 104(4), 043104 (2008). [CrossRef]

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S. Chang, W. Chen, S. Shei, C. Kuo, T. Ko, C. Shen, J. Tsai, W. Lai, J. Sheu, and A. Lin, “High-brightness InGaN-GaN power flip-chip LEDs,” J. Lightwave Technol. 27(12), 1985–1989 (2009). [CrossRef]

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Jpn. J. Appl. Phys.

A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. Denbaars, S. Nakamura, and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates,” Jpn. J. Appl. Phys. 44(5), L173–L175 (2005). [CrossRef]
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Langmuir

P. Kumnorkaew, Y. K. Ee, N. Tansu, and J. F. Gilchrist, “Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays,” Langmuir 24(21), 12150–12157 (2008). [CrossRef] [PubMed]

Nat. Photonics

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Opt. Express

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S. H. Park, Y. T. Moon, J. S. Lee, H. K. Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status Solidi., A Appl. Mater. Sci. 208(1), 195–198 (2011). [CrossRef]

Physica E

Y. Li, B. Liu, R. Zhang, Z. Xie, and Y. Zheng, “Investigation of optical properties of InGaN-InN-InGaN/GaN quantum-well in the green spectral regime,” Physica E 44, 821–825 (2012). [CrossRef]

Other

M. Bass, Handbook of Optics, (Optical Society of America, 2: Devices, Measurements, and Properties, 1994).

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[1] S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, “High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures,” Jpn. J. Appl. Phys. 34(Part 2, No. 7A), L797–L799 (1995). [CrossRef]

[2] M. Krames, O. Shchekin, R. Mueller-Mach, G. Mueller, L. Zhou, G. Harbers, and M. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” IEEE J. Display Technol. 3(2), 160–175 (2007). [CrossRef]

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[4] N. Tansu, H. Zhao, G. Liu, X. H. Li, J. Zhang, H. Tong, and Y. K. Ee, “Breakthrough in photonics 2009: III-Photonics,” IEEE Photonics J. 2, 236–243 (2010).

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[9] H. Zhao, G. Liu, X.-H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tans, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009). [CrossRef]

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[12] R. A. Arif, H. Zhao, and N. Tansu, “Type-II InGaN-GaNAs quantum wells for lasers applications,” Appl. Phys. Lett. 92(1), 011104 (2008). [CrossRef]

[13] H. Zhao, R. A. Arif, and N. Tansu, “Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers,” J. Appl. Phys. 104(4), 043104 (2008). [CrossRef]

[14] S. H. Park, Y. T. Lee, and J. Park, “Optical properties of type-II InGaN/GaAsN/GaN quantum wells,” Opt. Quantum Electron. 41(11-13), 779–785 (2009). [CrossRef]

[15] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes,” IEEE J. Quantum Electron. 45(1), 66–78 (2009). [CrossRef]

[16] C. L. Tsai, G. C. Fan, and Y. S. Lee, “Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes,” Appl. Phys., A Mater. Sci. Process. 104(1), 319–323 (2011). [CrossRef]

[17] S. H. Park, Y. T. Moon, J. S. Lee, H. K. Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status Solidi., A Appl. Mater. Sci. 208(1), 195–198 (2011). [CrossRef]

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[21] Y. Li, B. Liu, R. Zhang, Z. Xie, and Y. Zheng, “Investigation of optical properties of InGaN-InN-InGaN/GaN quantum-well in the green spectral regime,” Physica E 44, 821–825 (2012). [CrossRef]

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[24] A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. Denbaars, S. Nakamura, and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates,” Jpn. J. Appl. Phys. 44(5), L173–L175 (2005). [CrossRef]

[25] H. Masui, S. Nakamura, S. P. DenBaars, and U. K. Mishra, “Nonpolar ands III-nitride light-emitting diodes: Achievements and challenges,” IEEE Trans. Electron. Dev. 57(1), 88–100 (2010). [CrossRef]

[26] C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,” J. Appl. Phys. 93(11), 9383–9385 (2003). [CrossRef]

[27] T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004). [CrossRef]

[28] J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009). [CrossRef]

[29] H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, “GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses,” Appl. Phys. Lett. 84(13), 2253–2255 (2004). [CrossRef]

[30] J. Q. Xi, H. Luo, A. J. Pasquale, J. K. Kim, and E. F. Schubert, “Enhanced light extraction in GaInN light-emitting diode with pyramid reflector,” IEEE Photon. Technol. Lett. 18(22), 2347–2349 (2006). [CrossRef]

[31] Q. Xi, M. F. Schubert, J. K. Kim, E. F. Schubert, M. Chen, S. Y. Lin, W. Liu, and J. A. Smart, “Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection,” Nat. Photonics 1, 176–179 (2007).

[32] Y.-K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett. 91(22), 221107 (2007). [CrossRef]

[33] Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-Nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1218–1225 (2009). [CrossRef]

[34] O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006). [CrossRef]

[35] H. Kim, K. K. Kim, K. K. Choi, H. Kim, J. O. Song, J. Cho, K. H. Baik, C. Sone, Y. Park, and T.-Y. Seong, “Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry,” Appl. Phys. Lett. 91(2), 023510 (2007). [CrossRef]

[36] S. Chang, W. Chen, S. Shei, C. Kuo, T. Ko, C. Shen, J. Tsai, W. Lai, J. Sheu, and A. Lin, “High-brightness InGaN-GaN power flip-chip LEDs,” J. Lightwave Technol. 27(12), 1985–1989 (2009). [CrossRef]

[37] C. Chu, F. Lai, J. Chu, C. Yu, C. Lin, H. Kuo, and S. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” Appl. Phys. Lett. 95, 3916–3922 (2004).

[38] W. Y. Fu, K. K. Wong, and H. W. Choi, “Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography,” Appl. Phys. Lett. 95(13), 133125 (2009). [CrossRef]

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OpticsInfoBase

Energy Express

Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes