OSA's Digital Library

Energy Express

Energy Express

  • Editor: Christian Seassal
  • Vol. 20, Iss. S6 — Nov. 5, 2012
  • pp: A1019–A1025

Vertical InGaN light-emitting diode with a retained patterned sapphire layer

Y.C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, C. H. Yen, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko  »View Author Affiliations


Optics Express, Vol. 20, Issue S6, pp. A1019-A1025 (2012)
http://dx.doi.org/10.1364/OE.20.0A1019


View Full Text Article

Enhanced HTML    Acrobat PDF (1136 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

We present an efficient vertical InGaN light-emitting diode (LED) in which the proposed vertical LEDs were fabricated with patterned sapphire substrates (PSS) using thinning techniques. After the thinning of sapphire substrate, selective dry etching process was performed on the remainder sapphire layer to expose the n-GaN contact layer instead of removing the sapphire substrate using the laser lift-off technique. These processes feature the LEDs with a sapphire-face-up structure and vertical conduction property. The PSS was adopted as a growth substrate to mitigate the light-guided effect, and thereby increase the light-extraction efficiency. Compared with conventional lateral GaN LEDs grown on PSS, the proposed vertical LEDs exhibit a higher light output power and less power degradation at a high driving current. This could be attributed to the fact that the vertical LEDs behave in a manner similar to flip-chip GaN/sapphire LEDs with excellent heat conduction.

© 2012 OSA

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: August 9, 2012
Revised Manuscript: September 21, 2012
Manuscript Accepted: October 17, 2012
Published: November 2, 2012

Citation
Y.C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, C. H. Yen, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko, "Vertical InGaN light-emitting diode with a retained patterned sapphire layer," Opt. Express 20, A1019-A1025 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-S6-A1019


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. E. F. Schubert, Light-emitting diode, 2nd ed. (Cambridge University Press, 2006) pp. 150–160.
  2. W. S. Wong, M. Kneissl, P. Mei, D. W. Treat, M. Teepe, and N. M. Johnson, “Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates,” Appl. Phys. Lett.78(9), 1198–1200 (2001). [CrossRef]
  3. S. C. Hsu, B. J. Pong, W. H. Li, E. T. Beechem, S. Graham, and C. Y. Liu, “Stress relaxation in GaN by transfer bonding on Si substrates,” Appl. Phys. Lett.91(25), 251114 (2007).
  4. D. S. Wuu, S. C. Hsu, S. H. Huang, C. C. Wu, C. E. Lee, and R. H. Horng, “GaN/mirror/Si light-emitting diodes for vertical current injection by laser lift-off and wafer bonding techniques,” Jpn. J. Appl. Phys.43(8A), 5239–5242 (2004). [CrossRef]
  5. Y. C. Sermon Wu, J. H. Cheng, W. C. Peng, and H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes,” Appl. Phys. Lett.90(25), 251110 (2007).
  6. S.-H. Huang, R.-H. Horng, S.-C. Hsu, T.-Y. Chen, and D.-S. Wuu, “Surface texturing for wafer-bonded vertical-type GaN/mirror/Si light-emitting diodes,” Jpn. J. Appl. Phys.44(5A), 3028–3031 (2005). [CrossRef]
  7. C. H. Jang, J. K. Sheu, S. J. Chang, M. L. Lee, C. C. Yang, S. J. Tu, F. W. Huang, and C. K. Hsu, “Effect of growth pressure of undoped GaN layer on the ESD characteristics of GaN-based LEDs grown on patterned sapphire,” IEEE Photon. Technol. Lett.23(14), 968–970 (2011). [CrossRef]
  8. C. M. Tsai, J. K. Sheu, W. C. Lai, M. L. Lee, S. J. Chang, C. S. Chang, T. K. Ko, and C. F. Shen, “GaN-based LEDs output power improved by textured GaN/sapphire interface using in-situ SiH4 treatment process during epitaxial growth,” IEEE J. Sel. Top. Quantum Electron.15(4), 1275–1280 (2009). [CrossRef]
  9. H. Y. Kuo, S. J. Wang, P. R. Wang, K. M. Uang, T. M. Chen, S. L. Chen, W. C. Lee, H. K. Hsu, J. C. Chou, and C. H. Wu, “Use of elastic conductive adhesive as the bonding agent for the fabrication of vertical structure GaN-based LEDs on flexible metal substrate,” IEEE Photon. Technol. Lett.20(7), 523–525 (2008). [CrossRef]
  10. T. Mukai, M. Yamada, and S. Nakamura, “Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes,” Jpn. J. Appl. Phys.37(Part 2, No. 11B), L1358–L1361 (1998). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1 Fig. 2 Fig. 3
 
Fig. 4
 

« Previous Article

OSA is a member of CrossRef.

CrossCheck Deposited