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  • Editor: Christian Seassal
  • Vol. 20, Iss. S6 — Nov. 5, 2012
  • pp: A1019–A1025

Vertical InGaN light-emitting diode with a retained patterned sapphire layer

Y.C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, C. H. Yen, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko  »View Author Affiliations

Optics Express, Vol. 20, Issue S6, pp. A1019-A1025 (2012)

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We present an efficient vertical InGaN light-emitting diode (LED) in which the proposed vertical LEDs were fabricated with patterned sapphire substrates (PSS) using thinning techniques. After the thinning of sapphire substrate, selective dry etching process was performed on the remainder sapphire layer to expose the n-GaN contact layer instead of removing the sapphire substrate using the laser lift-off technique. These processes feature the LEDs with a sapphire-face-up structure and vertical conduction property. The PSS was adopted as a growth substrate to mitigate the light-guided effect, and thereby increase the light-extraction efficiency. Compared with conventional lateral GaN LEDs grown on PSS, the proposed vertical LEDs exhibit a higher light output power and less power degradation at a high driving current. This could be attributed to the fact that the vertical LEDs behave in a manner similar to flip-chip GaN/sapphire LEDs with excellent heat conduction.

© 2012 OSA

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Light-Emitting Diodes

Original Manuscript: August 9, 2012
Revised Manuscript: September 21, 2012
Manuscript Accepted: October 17, 2012
Published: November 2, 2012

Y.C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, C. H. Yen, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko, "Vertical InGaN light-emitting diode with a retained patterned sapphire layer," Opt. Express 20, A1019-A1025 (2012)

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