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Energy Express

  • Editor: Christian Seassal
  • Vol. 20, Iss. S6 — Nov. 5, 2012
  • pp: A812–A821

Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes

A. Armstrong, T. A. Henry, D. D. Koleske, M. H. Crawford, and S. R. Lee  »View Author Affiliations

Optics Express, Vol. 20, Issue S6, pp. A812-A821 (2012)

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Deep level defects in the multi-quantum well (MQW) region of InGaN/GaN light emitting diodes (LEDs) were investigated. InGaN quantum well and GaN quantum barrier defect states were distinguished using bias-dependent steady-state photocapacitance and deep level optical spectroscopy, and their possible physical origin and potential impact on LED performance is considered. Lighted capacitance-voltage measurements provided quantitative and nanoscale depth profiling of the deep level concentration within the MQW region. The concentration of every observed deep level varied strongly with depth in the MQW region, which indicates evolving mechanisms for defect incorporation during MQW growth.

© 2012 OSA

OCIS Codes
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Light-Emitting Diodes

Original Manuscript: June 22, 2012
Revised Manuscript: August 17, 2012
Manuscript Accepted: August 17, 2012
Published: September 13, 2012

A. Armstrong, T. A. Henry, D. D. Koleske, M. H. Crawford, and S. R. Lee, "Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes," Opt. Express 20, A812-A821 (2012)

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