Optics InfoBase > Energy Express > Volume 20 > Issue S6 > Page A836
|
Observation of unusual optical transitions in thin-film Cu(In,Ga)Se2 solar cellsYu-Kuang Liao, Shou-Yi Kuo, Woei-Tyng Lin, Fang-I Lai, Dan-Hua Hsieh, Min-An Tsai, Shih-Chen Chen, Ding-Wen Chiou, Jen-Chuang Chang, Kaung-Hsiung Wu, Shun-Jen Cheng, and Hao-Chung Kuo »View Author Affiliations
Yu-Kuang Liao,1,4
Shou-Yi Kuo,2,*
Woei-Tyng Lin,3
Fang-I Lai,3
Dan-Hua Hsieh,5
Min-An Tsai,6
Shih-Chen Chen,1
Ding-Wen Chiou,4
Jen-Chuang Chang,4
Kaung-Hsiung Wu,1
Shun-Jen Cheng,1
and Hao-Chung Kuo5,7
1Department of Electro-Physics, National Chiao-Tung University, Hsinchu, Taiwan 2Department of Electronic Engineering, Chang-Gung University,Taoyuan, Taiwan 3Department of Photonic Engineering, Yuan-Ze University, Taoyuan, Taiwan 4Compound Semiconductor Solar Cell Department, Next Generation Solar Cell Division, Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 5Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan 6Photovoltaic Metrology Laboratory, Energy & Environment Metrology Division, Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu, Taiwan 7hckuo@faculty.nctu.edu.tw *Corresponding author: sykuo@mail.cgu.edu.tw |
Optics Express, Vol. 20, Issue S6, pp. A836-A842 (2012)
http://dx.doi.org/10.1364/OE.20.00A836
View Full Text Article
Enhanced HTML 
Acrobat PDF (1309 KB)
Abstract
In this paper, we examine photoluminescence spectra of Cu(In,Ga)Se2 (CIGS) via temperature-dependent and power-dependent photoluminescence (PL). Donor-acceptor pair (DAP) transition, near-band-edge transition were identified by their activation energies. S-shaped displacement of peak position was observed and was attributed to carrier confinement caused by potential fluctuation. This coincides well with the obtained activation energy at low temperature. We also present a model for transition from VSe to VIn and to VCu which illustrates competing mechanisms between DAPs recombinations.
© 2012 OSA
OCIS Codes
(350.6050) Other areas of optics : Solar energy
(160.5335) Materials : Photosensitive materials
ToC Category:
Photovoltaics
History
Original Manuscript: August 20, 2012
Revised Manuscript: September 19, 2012
Manuscript Accepted: September 20, 2012
Published: September 28, 2012
Citation
Yu-Kuang Liao, Shou-Yi Kuo, Woei-Tyng Lin, Fang-I Lai, Dan-Hua Hsieh, Min-An Tsai, Shih-Chen Chen, Ding-Wen Chiou, Jen-Chuang Chang, Kaung-Hsiung Wu, Shun-Jen Cheng, and Hao-Chung Kuo, "Observation of unusual optical transitions in thin-film Cu(In,Ga)Se2 solar cells," Opt. Express 20, A836-A842 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-S6-A836
Sort: Author | Year | Journal | Reset
References
- P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Prog. Photovolt. Res. Appl. 19(7), 894–897 (2011). [CrossRef]
- S. B. Zhang, S. H. Wei, A. Zunger, and H. Katayama-Yoshida, “Defect physics of the CuInSe2 chalcopyrite semiconductor,” Phys. Rev. B 57(16), 9642–9656 (1998). [CrossRef]
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- S. Shirakata, K. Ohkubo, Y. Ishii, and T. Nakada, “Effects of CdS buffer layers on photoluminescence properties of Cu(In,Ga)Se2 solar cells,” Sol. Energy Mater. Sol. Cells 93(6-7), 988–992 (2009). [CrossRef]
- S. I. Jung, K. H. Yoon, S. Ahn, J. Gwak, and J. H. Yun, “Fabrication and characterization of wide band-gap CuGaSe2 thin films for tandem structure,” Curr. Appl. Phys. 10(3), S395–S398 (2010). [CrossRef]
- M. A. Contreras, A. M. Gabor, A. L. Tennant, S. Asher, J. Tuttle, and R. Noufi, “16.4% total-area conversion efficiency thin-film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell,” Prog. Photovolt. Res. Appl. 2(4), 287–292 (1994). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- T. P. Hsieh, C. C. Chuang, C. S. Wu, J. C. Chang, J. W. Guo, and W. C. Chen, “Effects of residual copper selenide on CuInGaSe2 solar cells,” Solid-State Electron. 56(1), 175–178 (2011). [CrossRef]
- N. Rega, S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch. Lux-Steiner, R. Kniese, and M. J. Romero, “Excitonic luminescence of Cu(In,Ga)Se2,” Thin Solid Films 480–481, 286–290 (2005). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- S. Shirakata and T. Nakada, “Photoluminescence and time-resolved photoluminescence in Cu(In,Ga)Se2 thin films and solar cells,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(5), 1059–1062 (2009). [CrossRef]
- M. Wagner, I. Dirnstorfer, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer, “Characterization of Cu(In,Ga)Se2 thin films I. Cu-rich layers,” Phys. Status Solidi, A Appl. Res. 167(1), 131–142 (1998). [CrossRef]
- B. M. Keyes, P. Dippo, W. Metzger, J. AbuShama, and R. Noufi, “Cu(In,Ga)Se2 thin films evolution during growth – a photoluminescence study,” Proceeding of the 29th IEEE Phot. Spec. Conf., 511–514 (2002).
- Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34(1), 149–154 (1967). [CrossRef]
- E. Kuokstis, W. H. Sun, M. Shatalov, J. W. Yang, and M. Asif Khan, “Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers,” Appl. Phys. Lett. 88(26), 261905 (2006). [CrossRef]
- M. J. Romero, H. Du, G. Teeter, Y. Yan, and M. M. Al-Jassin, “Comparative study of luminescence and intrinsic point defects in kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications,” Phys. Rev. B 84(16), 165324 (2011). [CrossRef]
- J. Mattheis, U. Rau, and J. H. Werner, “Light absorption and emission in semiconductors with band gap fluctuations-A study on Cu(In,Ga)Se2 thin films,” J. Appl. Phys. 101(11), 113519 (2007). [CrossRef]
- S. Siebentritt, “What limits the efficiency of chalcopyrite solar cells?” Sol. Energy Sol. Cells. 95(6), 1471–1476 (2011). [CrossRef]
- Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998). [CrossRef]
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
- A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, “Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1?xN layers,” J. Appl. Phys. 95(9), 4670–4674 (2004). [CrossRef]
- T. Yamaguchi, J. Matsufusa, and A. Yoshida, “Optical properties in RF sputtered CuInxGa1?xSe2 thin films,” Appl. Surf. Sci. 70-71, 669–674 (1993). [CrossRef]
- K. Yoshino, H. Yokoyama, K. Maeda, T. Ikari, A. Fukuyama, P. J. Fons, A. Yamada, and S. Niki, “Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy,” J. Appl. Phys. 86(8), 4354–4359 (1999). [CrossRef]
- M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, “Temperature quenching of photoluminescence intensities in undoped and doped GaN,” J. Appl. Phys. 86(7), 3721–3728 (1999). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by post deposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- I. Dirnstorfer, D. M. Hofmann, D. Meister, B. K. Meyer, W. Riedl, and F. Karg, “Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin films,” J. Appl. Phys. 85(3), 1423–1428 (1999). [CrossRef]
- A. V. Mudryi, V. F. Gremenok, I. A. Victorov, V. B. Zalesski, F. V. Kurdesov, V. I. Kovalevski, M. V. Yakushev, and R. W. Martin, “Optical characterisation of high-quality CuInSe2 thin films synthesised by two-stage selenisation process,” Thin Solid Films 431–432, 193–196 (2003). [CrossRef]
- J. H. Schon and E. Bucher, “Comparison of point defects in CuInSe2 and CuGaSe2 single crystals,” Sol. Energy Mater. Sol. Cells 57(3), 229–237 (1999). [CrossRef]
- D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, “Kinetics of radiative recombination at randomly distributed donors and acceptors,” Phys. Rev. 140(1A), A202–A220 (1965). [CrossRef]
- U. Rau, “Tunneling-enhanced recombination in CuInGaSe2 heterojunction solar cells,” Appl. Phys. Lett. 74(1), 111–113 (1999). [CrossRef]
- U. Raw, A. Jasenek, H. W. Schock, F. Engelhardt, and Th. Meyer, “Electronic loss mechanisms in chalcopyrite based heterojunction solar cells,” Thin Solid Films 361–362, 298–302 (2000).
Ager, J. W.
Ahn, S.
Albert, J.
Al-Jassin, M. M.
Asher, S.
Asif Khan, M.
Augustyniak, W. M.
Beaumont, B.
Bell, A.
Bräunig, D.
Bruns, J.
Bucher, E.
Chang, J. C.
Chen, C. H.
Chen, H. J.
Chen, S. C.
Chen, W. C.
Cheng, S. J.
Cho, Y. H.
Christen, J.
Chuang, C. C.
Chueh, Y. L.
Contreras, M. A.
DenBaars, S. P.
Dirnstorfer, I.
Du, H.
Duda, A.
Engelhardt, F.
Fischer, A. J.
Fons, P. J.
Fujioka, A.
Fukuyama, A.
Gabor, A. M.
Gainer, G. H.
Gibart, P.
Grandjean, N.
Gremenok, V. F.
Guo, J. W.
Gwak, J.
Haller, E. E.
Hariskos, D.
Hasoon, F. S.
Hofmann, D. M.
Hopfield, J. J.
Hsieh, T. P.
Ikari, T.
Ishii, Y.
Jackson, P.
Jasenek, A.
Juang, J. Y.
Jung, S. I.
Karg, F.
Katayama-Yoshida, H.
Keane, J.
Keller, S.
Kniese, R.
Kobayashi, T.
Kovalevski, V. I.
Kuo, H. C.
Kuokstis, E.
Kurdesov, F. V.
Lai, C. H.
Lampert, M. D.
Leroux, M.
Liao, Y. K.
Lotter, E.
Lu, H.
Lux-Steiner, M. Ch.
Maeda, K.
Martin, R. W.
Massies, J.
Matsufusa, J.
Mattheis, J.
Meister, D.
Menner, R.
Metzger, W.
Meyer, B. K.
Meyer, Th.
Mishra, U. K.
Mudryi, A. V.
Nakada, T.
Nakagawa, Y.
Nanishi, Y.
Nataf, G.
Niki, S.
Nishiwaki, S.
Noufi, R.
Ohkubo, K.
Omiya, H.
Paetel, S.
Perkins, C. L.
Plumlee, C.
Ponce, F. A.
Powalla, M.
Rau, U.
Raw, U.
Rega, N.
Riedl, W.
Romannathan, K.
Romero, M.
Romero, M. J.
Saito, Y.
Schaff, W. J.
Scheer, R.
Schock, H. W.
Schon, J. H.
Semond, F.
Shatalov, M.
Shirakata, S.
Siebentritt, S.
Song, J. J.
Srinivasan, S.
Sun, W. H.
Tanaka, S.
Teeter, G.
Tennant, A. L.
Thomas, D. G.
Töpper, K.
Tuttle, J.
Varshni, Y. P.
Victorov, I. A.
Wagner, M.
Walukiewicz, W.
Ward, J.
Weber, M.
Wei, S. H.
Weidinger, A.
Werner, J. H.
Wischmann, W.
Wu, C. S.
Wu, J.
Wu, K. H.
Wuerz, R.
Yakushev, M. V.
Yamada, A.
Yamaguchi, T.
Yan, Y.
Yang, J. W.
Yokoyama, H.
Yoon, K. H.
Yoshida, A.
Yoshino, K.
Young, D.
Yu, K. M.
Yun, J. H.
Zajogin, A.
Zalesski, V. B.
Zhang, S. B.
Zunger, A.
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
- S. I. Jung, K. H. Yoon, S. Ahn, J. Gwak, and J. H. Yun, “Fabrication and characterization of wide band-gap CuGaSe2 thin films for tandem structure,” Curr. Appl. Phys. 10(3), S395–S398 (2010). [CrossRef]
- N. Rega, S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch. Lux-Steiner, R. Kniese, and M. J. Romero, “Excitonic luminescence of Cu(In,Ga)Se2,” Thin Solid Films 480–481, 286–290 (2005). [CrossRef]
- M. J. Romero, H. Du, G. Teeter, Y. Yan, and M. M. Al-Jassin, “Comparative study of luminescence and intrinsic point defects in kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications,” Phys. Rev. B 84(16), 165324 (2011). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- M. A. Contreras, A. M. Gabor, A. L. Tennant, S. Asher, J. Tuttle, and R. Noufi, “16.4% total-area conversion efficiency thin-film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell,” Prog. Photovolt. Res. Appl. 2(4), 287–292 (1994). [CrossRef]
- E. Kuokstis, W. H. Sun, M. Shatalov, J. W. Yang, and M. Asif Khan, “Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers,” Appl. Phys. Lett. 88(26), 261905 (2006). [CrossRef]
- D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, “Kinetics of radiative recombination at randomly distributed donors and acceptors,” Phys. Rev. 140(1A), A202–A220 (1965). [CrossRef]
- M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, “Temperature quenching of photoluminescence intensities in undoped and doped GaN,” J. Appl. Phys. 86(7), 3721–3728 (1999). [CrossRef]
- A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, “Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1?xN layers,” J. Appl. Phys. 95(9), 4670–4674 (2004). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by post deposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by post deposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- J. H. Schon and E. Bucher, “Comparison of point defects in CuInSe2 and CuGaSe2 single crystals,” Sol. Energy Mater. Sol. Cells 57(3), 229–237 (1999). [CrossRef]
- T. P. Hsieh, C. C. Chuang, C. S. Wu, J. C. Chang, J. W. Guo, and W. C. Chen, “Effects of residual copper selenide on CuInGaSe2 solar cells,” Solid-State Electron. 56(1), 175–178 (2011). [CrossRef]
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- T. P. Hsieh, C. C. Chuang, C. S. Wu, J. C. Chang, J. W. Guo, and W. C. Chen, “Effects of residual copper selenide on CuInGaSe2 solar cells,” Solid-State Electron. 56(1), 175–178 (2011). [CrossRef]
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998). [CrossRef]
- A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, “Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1?xN layers,” J. Appl. Phys. 95(9), 4670–4674 (2004). [CrossRef]
- T. P. Hsieh, C. C. Chuang, C. S. Wu, J. C. Chang, J. W. Guo, and W. C. Chen, “Effects of residual copper selenide on CuInGaSe2 solar cells,” Solid-State Electron. 56(1), 175–178 (2011). [CrossRef]
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- M. A. Contreras, A. M. Gabor, A. L. Tennant, S. Asher, J. Tuttle, and R. Noufi, “16.4% total-area conversion efficiency thin-film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell,” Prog. Photovolt. Res. Appl. 2(4), 287–292 (1994). [CrossRef]
- Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998). [CrossRef]
- I. Dirnstorfer, D. M. Hofmann, D. Meister, B. K. Meyer, W. Riedl, and F. Karg, “Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin films,” J. Appl. Phys. 85(3), 1423–1428 (1999). [CrossRef]
- M. Wagner, I. Dirnstorfer, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer, “Characterization of Cu(In,Ga)Se2 thin films I. Cu-rich layers,” Phys. Status Solidi, A Appl. Res. 167(1), 131–142 (1998). [CrossRef]
- M. J. Romero, H. Du, G. Teeter, Y. Yan, and M. M. Al-Jassin, “Comparative study of luminescence and intrinsic point defects in kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications,” Phys. Rev. B 84(16), 165324 (2011). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- U. Raw, A. Jasenek, H. W. Schock, F. Engelhardt, and Th. Meyer, “Electronic loss mechanisms in chalcopyrite based heterojunction solar cells,” Thin Solid Films 361–362, 298–302 (2000).
- Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998). [CrossRef]
- K. Yoshino, H. Yokoyama, K. Maeda, T. Ikari, A. Fukuyama, P. J. Fons, A. Yamada, and S. Niki, “Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy,” J. Appl. Phys. 86(8), 4354–4359 (1999). [CrossRef]
- A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, “Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1?xN layers,” J. Appl. Phys. 95(9), 4670–4674 (2004). [CrossRef]
- K. Yoshino, H. Yokoyama, K. Maeda, T. Ikari, A. Fukuyama, P. J. Fons, A. Yamada, and S. Niki, “Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy,” J. Appl. Phys. 86(8), 4354–4359 (1999). [CrossRef]
- M. A. Contreras, A. M. Gabor, A. L. Tennant, S. Asher, J. Tuttle, and R. Noufi, “16.4% total-area conversion efficiency thin-film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell,” Prog. Photovolt. Res. Appl. 2(4), 287–292 (1994). [CrossRef]
- Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998). [CrossRef]
- M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, “Temperature quenching of photoluminescence intensities in undoped and doped GaN,” J. Appl. Phys. 86(7), 3721–3728 (1999). [CrossRef]
- M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, “Temperature quenching of photoluminescence intensities in undoped and doped GaN,” J. Appl. Phys. 86(7), 3721–3728 (1999). [CrossRef]
- A. V. Mudryi, V. F. Gremenok, I. A. Victorov, V. B. Zalesski, F. V. Kurdesov, V. I. Kovalevski, M. V. Yakushev, and R. W. Martin, “Optical characterisation of high-quality CuInSe2 thin films synthesised by two-stage selenisation process,” Thin Solid Films 431–432, 193–196 (2003). [CrossRef]
- T. P. Hsieh, C. C. Chuang, C. S. Wu, J. C. Chang, J. W. Guo, and W. C. Chen, “Effects of residual copper selenide on CuInGaSe2 solar cells,” Solid-State Electron. 56(1), 175–178 (2011). [CrossRef]
- S. I. Jung, K. H. Yoon, S. Ahn, J. Gwak, and J. H. Yun, “Fabrication and characterization of wide band-gap CuGaSe2 thin films for tandem structure,” Curr. Appl. Phys. 10(3), S395–S398 (2010). [CrossRef]
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
- P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Prog. Photovolt. Res. Appl. 19(7), 894–897 (2011). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- I. Dirnstorfer, D. M. Hofmann, D. Meister, B. K. Meyer, W. Riedl, and F. Karg, “Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin films,” J. Appl. Phys. 85(3), 1423–1428 (1999). [CrossRef]
- M. Wagner, I. Dirnstorfer, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer, “Characterization of Cu(In,Ga)Se2 thin films I. Cu-rich layers,” Phys. Status Solidi, A Appl. Res. 167(1), 131–142 (1998). [CrossRef]
- D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, “Kinetics of radiative recombination at randomly distributed donors and acceptors,” Phys. Rev. 140(1A), A202–A220 (1965). [CrossRef]
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- T. P. Hsieh, C. C. Chuang, C. S. Wu, J. C. Chang, J. W. Guo, and W. C. Chen, “Effects of residual copper selenide on CuInGaSe2 solar cells,” Solid-State Electron. 56(1), 175–178 (2011). [CrossRef]
- K. Yoshino, H. Yokoyama, K. Maeda, T. Ikari, A. Fukuyama, P. J. Fons, A. Yamada, and S. Niki, “Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy,” J. Appl. Phys. 86(8), 4354–4359 (1999). [CrossRef]
- S. Shirakata, K. Ohkubo, Y. Ishii, and T. Nakada, “Effects of CdS buffer layers on photoluminescence properties of Cu(In,Ga)Se2 solar cells,” Sol. Energy Mater. Sol. Cells 93(6-7), 988–992 (2009). [CrossRef]
- P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Prog. Photovolt. Res. Appl. 19(7), 894–897 (2011). [CrossRef]
- U. Raw, A. Jasenek, H. W. Schock, F. Engelhardt, and Th. Meyer, “Electronic loss mechanisms in chalcopyrite based heterojunction solar cells,” Thin Solid Films 361–362, 298–302 (2000).
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- S. I. Jung, K. H. Yoon, S. Ahn, J. Gwak, and J. H. Yun, “Fabrication and characterization of wide band-gap CuGaSe2 thin films for tandem structure,” Curr. Appl. Phys. 10(3), S395–S398 (2010). [CrossRef]
- I. Dirnstorfer, D. M. Hofmann, D. Meister, B. K. Meyer, W. Riedl, and F. Karg, “Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin films,” J. Appl. Phys. 85(3), 1423–1428 (1999). [CrossRef]
- M. Wagner, I. Dirnstorfer, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer, “Characterization of Cu(In,Ga)Se2 thin films I. Cu-rich layers,” Phys. Status Solidi, A Appl. Res. 167(1), 131–142 (1998). [CrossRef]
- S. B. Zhang, S. H. Wei, A. Zunger, and H. Katayama-Yoshida, “Defect physics of the CuInSe2 chalcopyrite semiconductor,” Phys. Rev. B 57(16), 9642–9656 (1998). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998). [CrossRef]
- N. Rega, S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch. Lux-Steiner, R. Kniese, and M. J. Romero, “Excitonic luminescence of Cu(In,Ga)Se2,” Thin Solid Films 480–481, 286–290 (2005). [CrossRef]
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- A. V. Mudryi, V. F. Gremenok, I. A. Victorov, V. B. Zalesski, F. V. Kurdesov, V. I. Kovalevski, M. V. Yakushev, and R. W. Martin, “Optical characterisation of high-quality CuInSe2 thin films synthesised by two-stage selenisation process,” Thin Solid Films 431–432, 193–196 (2003). [CrossRef]
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- E. Kuokstis, W. H. Sun, M. Shatalov, J. W. Yang, and M. Asif Khan, “Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers,” Appl. Phys. Lett. 88(26), 261905 (2006). [CrossRef]
- A. V. Mudryi, V. F. Gremenok, I. A. Victorov, V. B. Zalesski, F. V. Kurdesov, V. I. Kovalevski, M. V. Yakushev, and R. W. Martin, “Optical characterisation of high-quality CuInSe2 thin films synthesised by two-stage selenisation process,” Thin Solid Films 431–432, 193–196 (2003). [CrossRef]
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- M. Wagner, I. Dirnstorfer, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer, “Characterization of Cu(In,Ga)Se2 thin films I. Cu-rich layers,” Phys. Status Solidi, A Appl. Res. 167(1), 131–142 (1998). [CrossRef]
- M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, “Temperature quenching of photoluminescence intensities in undoped and doped GaN,” J. Appl. Phys. 86(7), 3721–3728 (1999). [CrossRef]
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Prog. Photovolt. Res. Appl. 19(7), 894–897 (2011). [CrossRef]
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
- N. Rega, S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch. Lux-Steiner, R. Kniese, and M. J. Romero, “Excitonic luminescence of Cu(In,Ga)Se2,” Thin Solid Films 480–481, 286–290 (2005). [CrossRef]
- K. Yoshino, H. Yokoyama, K. Maeda, T. Ikari, A. Fukuyama, P. J. Fons, A. Yamada, and S. Niki, “Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy,” J. Appl. Phys. 86(8), 4354–4359 (1999). [CrossRef]
- A. V. Mudryi, V. F. Gremenok, I. A. Victorov, V. B. Zalesski, F. V. Kurdesov, V. I. Kovalevski, M. V. Yakushev, and R. W. Martin, “Optical characterisation of high-quality CuInSe2 thin films synthesised by two-stage selenisation process,” Thin Solid Films 431–432, 193–196 (2003). [CrossRef]
- M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, “Temperature quenching of photoluminescence intensities in undoped and doped GaN,” J. Appl. Phys. 86(7), 3721–3728 (1999). [CrossRef]
- T. Yamaguchi, J. Matsufusa, and A. Yoshida, “Optical properties in RF sputtered CuInxGa1?xSe2 thin films,” Appl. Surf. Sci. 70-71, 669–674 (1993). [CrossRef]
- J. Mattheis, U. Rau, and J. H. Werner, “Light absorption and emission in semiconductors with band gap fluctuations-A study on Cu(In,Ga)Se2 thin films,” J. Appl. Phys. 101(11), 113519 (2007). [CrossRef]
- I. Dirnstorfer, D. M. Hofmann, D. Meister, B. K. Meyer, W. Riedl, and F. Karg, “Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin films,” J. Appl. Phys. 85(3), 1423–1428 (1999). [CrossRef]
- P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Prog. Photovolt. Res. Appl. 19(7), 894–897 (2011). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- I. Dirnstorfer, D. M. Hofmann, D. Meister, B. K. Meyer, W. Riedl, and F. Karg, “Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin films,” J. Appl. Phys. 85(3), 1423–1428 (1999). [CrossRef]
- M. Wagner, I. Dirnstorfer, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer, “Characterization of Cu(In,Ga)Se2 thin films I. Cu-rich layers,” Phys. Status Solidi, A Appl. Res. 167(1), 131–142 (1998). [CrossRef]
- U. Raw, A. Jasenek, H. W. Schock, F. Engelhardt, and Th. Meyer, “Electronic loss mechanisms in chalcopyrite based heterojunction solar cells,” Thin Solid Films 361–362, 298–302 (2000).
- Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998). [CrossRef]
- A. V. Mudryi, V. F. Gremenok, I. A. Victorov, V. B. Zalesski, F. V. Kurdesov, V. I. Kovalevski, M. V. Yakushev, and R. W. Martin, “Optical characterisation of high-quality CuInSe2 thin films synthesised by two-stage selenisation process,” Thin Solid Films 431–432, 193–196 (2003). [CrossRef]
- S. Shirakata and T. Nakada, “Photoluminescence and time-resolved photoluminescence in Cu(In,Ga)Se2 thin films and solar cells,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(5), 1059–1062 (2009). [CrossRef]
- S. Shirakata, K. Ohkubo, Y. Ishii, and T. Nakada, “Effects of CdS buffer layers on photoluminescence properties of Cu(In,Ga)Se2 solar cells,” Sol. Energy Mater. Sol. Cells 93(6-7), 988–992 (2009). [CrossRef]
- A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, “Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1?xN layers,” J. Appl. Phys. 95(9), 4670–4674 (2004). [CrossRef]
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
- M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, “Temperature quenching of photoluminescence intensities in undoped and doped GaN,” J. Appl. Phys. 86(7), 3721–3728 (1999). [CrossRef]
- K. Yoshino, H. Yokoyama, K. Maeda, T. Ikari, A. Fukuyama, P. J. Fons, A. Yamada, and S. Niki, “Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy,” J. Appl. Phys. 86(8), 4354–4359 (1999). [CrossRef]
- N. Rega, S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch. Lux-Steiner, R. Kniese, and M. J. Romero, “Excitonic luminescence of Cu(In,Ga)Se2,” Thin Solid Films 480–481, 286–290 (2005). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- M. A. Contreras, A. M. Gabor, A. L. Tennant, S. Asher, J. Tuttle, and R. Noufi, “16.4% total-area conversion efficiency thin-film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell,” Prog. Photovolt. Res. Appl. 2(4), 287–292 (1994). [CrossRef]
- S. Shirakata, K. Ohkubo, Y. Ishii, and T. Nakada, “Effects of CdS buffer layers on photoluminescence properties of Cu(In,Ga)Se2 solar cells,” Sol. Energy Mater. Sol. Cells 93(6-7), 988–992 (2009). [CrossRef]
- A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, “Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1?xN layers,” J. Appl. Phys. 95(9), 4670–4674 (2004). [CrossRef]
- P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Prog. Photovolt. Res. Appl. 19(7), 894–897 (2011). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, “Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1?xN layers,” J. Appl. Phys. 95(9), 4670–4674 (2004). [CrossRef]
- A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, “Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1?xN layers,” J. Appl. Phys. 95(9), 4670–4674 (2004). [CrossRef]
- P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Prog. Photovolt. Res. Appl. 19(7), 894–897 (2011). [CrossRef]
- J. Mattheis, U. Rau, and J. H. Werner, “Light absorption and emission in semiconductors with band gap fluctuations-A study on Cu(In,Ga)Se2 thin films,” J. Appl. Phys. 101(11), 113519 (2007). [CrossRef]
- U. Rau, “Tunneling-enhanced recombination in CuInGaSe2 heterojunction solar cells,” Appl. Phys. Lett. 74(1), 111–113 (1999). [CrossRef]
- U. Raw, A. Jasenek, H. W. Schock, F. Engelhardt, and Th. Meyer, “Electronic loss mechanisms in chalcopyrite based heterojunction solar cells,” Thin Solid Films 361–362, 298–302 (2000).
- N. Rega, S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch. Lux-Steiner, R. Kniese, and M. J. Romero, “Excitonic luminescence of Cu(In,Ga)Se2,” Thin Solid Films 480–481, 286–290 (2005). [CrossRef]
- I. Dirnstorfer, D. M. Hofmann, D. Meister, B. K. Meyer, W. Riedl, and F. Karg, “Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin films,” J. Appl. Phys. 85(3), 1423–1428 (1999). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- M. J. Romero, H. Du, G. Teeter, Y. Yan, and M. M. Al-Jassin, “Comparative study of luminescence and intrinsic point defects in kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications,” Phys. Rev. B 84(16), 165324 (2011). [CrossRef]
- N. Rega, S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch. Lux-Steiner, R. Kniese, and M. J. Romero, “Excitonic luminescence of Cu(In,Ga)Se2,” Thin Solid Films 480–481, 286–290 (2005). [CrossRef]
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by post deposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- U. Raw, A. Jasenek, H. W. Schock, F. Engelhardt, and Th. Meyer, “Electronic loss mechanisms in chalcopyrite based heterojunction solar cells,” Thin Solid Films 361–362, 298–302 (2000).
- J. H. Schon and E. Bucher, “Comparison of point defects in CuInSe2 and CuGaSe2 single crystals,” Sol. Energy Mater. Sol. Cells 57(3), 229–237 (1999). [CrossRef]
- M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, “Temperature quenching of photoluminescence intensities in undoped and doped GaN,” J. Appl. Phys. 86(7), 3721–3728 (1999). [CrossRef]
- E. Kuokstis, W. H. Sun, M. Shatalov, J. W. Yang, and M. Asif Khan, “Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers,” Appl. Phys. Lett. 88(26), 261905 (2006). [CrossRef]
- S. Shirakata and T. Nakada, “Photoluminescence and time-resolved photoluminescence in Cu(In,Ga)Se2 thin films and solar cells,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(5), 1059–1062 (2009). [CrossRef]
- S. Shirakata, K. Ohkubo, Y. Ishii, and T. Nakada, “Effects of CdS buffer layers on photoluminescence properties of Cu(In,Ga)Se2 solar cells,” Sol. Energy Mater. Sol. Cells 93(6-7), 988–992 (2009). [CrossRef]
- S. Siebentritt, “What limits the efficiency of chalcopyrite solar cells?” Sol. Energy Sol. Cells. 95(6), 1471–1476 (2011). [CrossRef]
- N. Rega, S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch. Lux-Steiner, R. Kniese, and M. J. Romero, “Excitonic luminescence of Cu(In,Ga)Se2,” Thin Solid Films 480–481, 286–290 (2005). [CrossRef]
- Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998). [CrossRef]
- A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, “Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1?xN layers,” J. Appl. Phys. 95(9), 4670–4674 (2004). [CrossRef]
- E. Kuokstis, W. H. Sun, M. Shatalov, J. W. Yang, and M. Asif Khan, “Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers,” Appl. Phys. Lett. 88(26), 261905 (2006). [CrossRef]
- A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, “Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1?xN layers,” J. Appl. Phys. 95(9), 4670–4674 (2004). [CrossRef]
- M. J. Romero, H. Du, G. Teeter, Y. Yan, and M. M. Al-Jassin, “Comparative study of luminescence and intrinsic point defects in kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications,” Phys. Rev. B 84(16), 165324 (2011). [CrossRef]
- M. A. Contreras, A. M. Gabor, A. L. Tennant, S. Asher, J. Tuttle, and R. Noufi, “16.4% total-area conversion efficiency thin-film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell,” Prog. Photovolt. Res. Appl. 2(4), 287–292 (1994). [CrossRef]
- D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, “Kinetics of radiative recombination at randomly distributed donors and acceptors,” Phys. Rev. 140(1A), A202–A220 (1965). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by post deposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- M. A. Contreras, A. M. Gabor, A. L. Tennant, S. Asher, J. Tuttle, and R. Noufi, “16.4% total-area conversion efficiency thin-film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell,” Prog. Photovolt. Res. Appl. 2(4), 287–292 (1994). [CrossRef]
- Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34(1), 149–154 (1967). [CrossRef]
- A. V. Mudryi, V. F. Gremenok, I. A. Victorov, V. B. Zalesski, F. V. Kurdesov, V. I. Kovalevski, M. V. Yakushev, and R. W. Martin, “Optical characterisation of high-quality CuInSe2 thin films synthesised by two-stage selenisation process,” Thin Solid Films 431–432, 193–196 (2003). [CrossRef]
- M. Wagner, I. Dirnstorfer, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer, “Characterization of Cu(In,Ga)Se2 thin films I. Cu-rich layers,” Phys. Status Solidi, A Appl. Res. 167(1), 131–142 (1998). [CrossRef]
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by post deposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- S. B. Zhang, S. H. Wei, A. Zunger, and H. Katayama-Yoshida, “Defect physics of the CuInSe2 chalcopyrite semiconductor,” Phys. Rev. B 57(16), 9642–9656 (1998). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by post deposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- J. Mattheis, U. Rau, and J. H. Werner, “Light absorption and emission in semiconductors with band gap fluctuations-A study on Cu(In,Ga)Se2 thin films,” J. Appl. Phys. 101(11), 113519 (2007). [CrossRef]
- P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Prog. Photovolt. Res. Appl. 19(7), 894–897 (2011). [CrossRef]
- T. P. Hsieh, C. C. Chuang, C. S. Wu, J. C. Chang, J. W. Guo, and W. C. Chen, “Effects of residual copper selenide on CuInGaSe2 solar cells,” Solid-State Electron. 56(1), 175–178 (2011). [CrossRef]
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Prog. Photovolt. Res. Appl. 19(7), 894–897 (2011). [CrossRef]
- A. V. Mudryi, V. F. Gremenok, I. A. Victorov, V. B. Zalesski, F. V. Kurdesov, V. I. Kovalevski, M. V. Yakushev, and R. W. Martin, “Optical characterisation of high-quality CuInSe2 thin films synthesised by two-stage selenisation process,” Thin Solid Films 431–432, 193–196 (2003). [CrossRef]
- K. Yoshino, H. Yokoyama, K. Maeda, T. Ikari, A. Fukuyama, P. J. Fons, A. Yamada, and S. Niki, “Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy,” J. Appl. Phys. 86(8), 4354–4359 (1999). [CrossRef]
- T. Yamaguchi, J. Matsufusa, and A. Yoshida, “Optical properties in RF sputtered CuInxGa1?xSe2 thin films,” Appl. Surf. Sci. 70-71, 669–674 (1993). [CrossRef]
- M. J. Romero, H. Du, G. Teeter, Y. Yan, and M. M. Al-Jassin, “Comparative study of luminescence and intrinsic point defects in kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications,” Phys. Rev. B 84(16), 165324 (2011). [CrossRef]
- E. Kuokstis, W. H. Sun, M. Shatalov, J. W. Yang, and M. Asif Khan, “Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers,” Appl. Phys. Lett. 88(26), 261905 (2006). [CrossRef]
- K. Yoshino, H. Yokoyama, K. Maeda, T. Ikari, A. Fukuyama, P. J. Fons, A. Yamada, and S. Niki, “Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy,” J. Appl. Phys. 86(8), 4354–4359 (1999). [CrossRef]
- S. I. Jung, K. H. Yoon, S. Ahn, J. Gwak, and J. H. Yun, “Fabrication and characterization of wide band-gap CuGaSe2 thin films for tandem structure,” Curr. Appl. Phys. 10(3), S395–S398 (2010). [CrossRef]
- T. Yamaguchi, J. Matsufusa, and A. Yoshida, “Optical properties in RF sputtered CuInxGa1?xSe2 thin films,” Appl. Surf. Sci. 70-71, 669–674 (1993). [CrossRef]
- K. Yoshino, H. Yokoyama, K. Maeda, T. Ikari, A. Fukuyama, P. J. Fons, A. Yamada, and S. Niki, “Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy,” J. Appl. Phys. 86(8), 4354–4359 (1999). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
- S. I. Jung, K. H. Yoon, S. Ahn, J. Gwak, and J. H. Yun, “Fabrication and characterization of wide band-gap CuGaSe2 thin films for tandem structure,” Curr. Appl. Phys. 10(3), S395–S398 (2010). [CrossRef]
- N. Rega, S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch. Lux-Steiner, R. Kniese, and M. J. Romero, “Excitonic luminescence of Cu(In,Ga)Se2,” Thin Solid Films 480–481, 286–290 (2005). [CrossRef]
- A. V. Mudryi, V. F. Gremenok, I. A. Victorov, V. B. Zalesski, F. V. Kurdesov, V. I. Kovalevski, M. V. Yakushev, and R. W. Martin, “Optical characterisation of high-quality CuInSe2 thin films synthesised by two-stage selenisation process,” Thin Solid Films 431–432, 193–196 (2003). [CrossRef]
- S. B. Zhang, S. H. Wei, A. Zunger, and H. Katayama-Yoshida, “Defect physics of the CuInSe2 chalcopyrite semiconductor,” Phys. Rev. B 57(16), 9642–9656 (1998). [CrossRef]
- S. B. Zhang, S. H. Wei, A. Zunger, and H. Katayama-Yoshida, “Defect physics of the CuInSe2 chalcopyrite semiconductor,” Phys. Rev. B 57(16), 9642–9656 (1998). [CrossRef]
Appl. Phys. Lett.
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- E. Kuokstis, W. H. Sun, M. Shatalov, J. W. Yang, and M. Asif Khan, “Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers,” Appl. Phys. Lett. 88(26), 261905 (2006). [CrossRef]
- Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998). [CrossRef]
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by post deposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- U. Rau, “Tunneling-enhanced recombination in CuInGaSe2 heterojunction solar cells,” Appl. Phys. Lett. 74(1), 111–113 (1999). [CrossRef]
Appl. Surf. Sci.
- T. Yamaguchi, J. Matsufusa, and A. Yoshida, “Optical properties in RF sputtered CuInxGa1?xSe2 thin films,” Appl. Surf. Sci. 70-71, 669–674 (1993). [CrossRef]
Curr. Appl. Phys.
- S. I. Jung, K. H. Yoon, S. Ahn, J. Gwak, and J. H. Yun, “Fabrication and characterization of wide band-gap CuGaSe2 thin films for tandem structure,” Curr. Appl. Phys. 10(3), S395–S398 (2010). [CrossRef]
J. Appl. Phys.
- J. Mattheis, U. Rau, and J. H. Werner, “Light absorption and emission in semiconductors with band gap fluctuations-A study on Cu(In,Ga)Se2 thin films,” J. Appl. Phys. 101(11), 113519 (2007). [CrossRef]
- K. Yoshino, H. Yokoyama, K. Maeda, T. Ikari, A. Fukuyama, P. J. Fons, A. Yamada, and S. Niki, “Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy,” J. Appl. Phys. 86(8), 4354–4359 (1999). [CrossRef]
- M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, “Temperature quenching of photoluminescence intensities in undoped and doped GaN,” J. Appl. Phys. 86(7), 3721–3728 (1999). [CrossRef]
- A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, “Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1?xN layers,” J. Appl. Phys. 95(9), 4670–4674 (2004). [CrossRef]
- I. Dirnstorfer, D. M. Hofmann, D. Meister, B. K. Meyer, W. Riedl, and F. Karg, “Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin films,” J. Appl. Phys. 85(3), 1423–1428 (1999). [CrossRef]
Opt. Express
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
Phys. Rev.
- D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, “Kinetics of radiative recombination at randomly distributed donors and acceptors,” Phys. Rev. 140(1A), A202–A220 (1965). [CrossRef]
Phys. Rev. B
- S. B. Zhang, S. H. Wei, A. Zunger, and H. Katayama-Yoshida, “Defect physics of the CuInSe2 chalcopyrite semiconductor,” Phys. Rev. B 57(16), 9642–9656 (1998). [CrossRef]
- M. J. Romero, H. Du, G. Teeter, Y. Yan, and M. M. Al-Jassin, “Comparative study of luminescence and intrinsic point defects in kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications,” Phys. Rev. B 84(16), 165324 (2011). [CrossRef]
Phys. Status Solidi, A Appl. Res.
- M. Wagner, I. Dirnstorfer, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer, “Characterization of Cu(In,Ga)Se2 thin films I. Cu-rich layers,” Phys. Status Solidi, A Appl. Res. 167(1), 131–142 (1998). [CrossRef]
Phys. Status Solidi., C Curr. Top. Solid State Phys.
- S. Shirakata and T. Nakada, “Photoluminescence and time-resolved photoluminescence in Cu(In,Ga)Se2 thin films and solar cells,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(5), 1059–1062 (2009). [CrossRef]
Physica
- Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34(1), 149–154 (1967). [CrossRef]
Prog. Photovolt. Res. Appl.
- P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Prog. Photovolt. Res. Appl. 19(7), 894–897 (2011). [CrossRef]
- M. A. Contreras, A. M. Gabor, A. L. Tennant, S. Asher, J. Tuttle, and R. Noufi, “16.4% total-area conversion efficiency thin-film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell,” Prog. Photovolt. Res. Appl. 2(4), 287–292 (1994). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
Sol. Energy Mater. Sol. Cells
- S. Shirakata, K. Ohkubo, Y. Ishii, and T. Nakada, “Effects of CdS buffer layers on photoluminescence properties of Cu(In,Ga)Se2 solar cells,” Sol. Energy Mater. Sol. Cells 93(6-7), 988–992 (2009). [CrossRef]
- J. H. Schon and E. Bucher, “Comparison of point defects in CuInSe2 and CuGaSe2 single crystals,” Sol. Energy Mater. Sol. Cells 57(3), 229–237 (1999). [CrossRef]
Sol. Energy Sol. Cells.
- S. Siebentritt, “What limits the efficiency of chalcopyrite solar cells?” Sol. Energy Sol. Cells. 95(6), 1471–1476 (2011). [CrossRef]
Solid-State Electron.
- T. P. Hsieh, C. C. Chuang, C. S. Wu, J. C. Chang, J. W. Guo, and W. C. Chen, “Effects of residual copper selenide on CuInGaSe2 solar cells,” Solid-State Electron. 56(1), 175–178 (2011). [CrossRef]
Thin Solid Films
- N. Rega, S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch. Lux-Steiner, R. Kniese, and M. J. Romero, “Excitonic luminescence of Cu(In,Ga)Se2,” Thin Solid Films 480–481, 286–290 (2005). [CrossRef]
- A. V. Mudryi, V. F. Gremenok, I. A. Victorov, V. B. Zalesski, F. V. Kurdesov, V. I. Kovalevski, M. V. Yakushev, and R. W. Martin, “Optical characterisation of high-quality CuInSe2 thin films synthesised by two-stage selenisation process,” Thin Solid Films 431–432, 193–196 (2003). [CrossRef]
- U. Raw, A. Jasenek, H. W. Schock, F. Engelhardt, and Th. Meyer, “Electronic loss mechanisms in chalcopyrite based heterojunction solar cells,” Thin Solid Films 361–362, 298–302 (2000).
Other
- B. M. Keyes, P. Dippo, W. Metzger, J. AbuShama, and R. Noufi, “Cu(In,Ga)Se2 thin films evolution during growth – a photoluminescence study,” Proceeding of the 29th IEEE Phot. Spec. Conf., 511–514 (2002).
2012, Chen, Opt. Express
- S. C. Chen, Y. K. Liao, H. J. Chen, C. H. Chen, C. H. Lai, Y. L. Chueh, H. C. Kuo, K. H. Wu, J. Y. Juang, S. J. Cheng, T. P. Hsieh, and T. Kobayashi, “Ultrafast carrier dynamics in Cu(In,Ga)Se2 thin films probed by femtosecond pump-probe spectroscopy,” Opt. Express 20(12), 12675–12681 (2012). [CrossRef]
- P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Prog. Photovolt. Res. Appl. 19(7), 894–897 (2011). [CrossRef]
- T. P. Hsieh, C. C. Chuang, C. S. Wu, J. C. Chang, J. W. Guo, and W. C. Chen, “Effects of residual copper selenide on CuInGaSe2 solar cells,” Solid-State Electron. 56(1), 175–178 (2011). [CrossRef]
- M. J. Romero, H. Du, G. Teeter, Y. Yan, and M. M. Al-Jassin, “Comparative study of luminescence and intrinsic point defects in kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications,” Phys. Rev. B 84(16), 165324 (2011). [CrossRef]
- S. Siebentritt, “What limits the efficiency of chalcopyrite solar cells?” Sol. Energy Sol. Cells. 95(6), 1471–1476 (2011). [CrossRef]
- S. I. Jung, K. H. Yoon, S. Ahn, J. Gwak, and J. H. Yun, “Fabrication and characterization of wide band-gap CuGaSe2 thin films for tandem structure,” Curr. Appl. Phys. 10(3), S395–S398 (2010). [CrossRef]
- S. Shirakata, K. Ohkubo, Y. Ishii, and T. Nakada, “Effects of CdS buffer layers on photoluminescence properties of Cu(In,Ga)Se2 solar cells,” Sol. Energy Mater. Sol. Cells 93(6-7), 988–992 (2009). [CrossRef]
- S. Shirakata and T. Nakada, “Photoluminescence and time-resolved photoluminescence in Cu(In,Ga)Se2 thin films and solar cells,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(5), 1059–1062 (2009). [CrossRef]
- J. Mattheis, U. Rau, and J. H. Werner, “Light absorption and emission in semiconductors with band gap fluctuations-A study on Cu(In,Ga)Se2 thin films,” J. Appl. Phys. 101(11), 113519 (2007). [CrossRef]
- E. Kuokstis, W. H. Sun, M. Shatalov, J. W. Yang, and M. Asif Khan, “Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers,” Appl. Phys. Lett. 88(26), 261905 (2006). [CrossRef]
- N. Rega, S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch. Lux-Steiner, R. Kniese, and M. J. Romero, “Excitonic luminescence of Cu(In,Ga)Se2,” Thin Solid Films 480–481, 286–290 (2005). [CrossRef]
- A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, “Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1?xN layers,” J. Appl. Phys. 95(9), 4670–4674 (2004). [CrossRef]
- A. V. Mudryi, V. F. Gremenok, I. A. Victorov, V. B. Zalesski, F. V. Kurdesov, V. I. Kovalevski, M. V. Yakushev, and R. W. Martin, “Optical characterisation of high-quality CuInSe2 thin films synthesised by two-stage selenisation process,” Thin Solid Films 431–432, 193–196 (2003). [CrossRef]
- K. Romannathan, M. A. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, “Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells,” Prog. Photovolt. Res. Appl. 11(4), 225–230 (2003). [CrossRef]
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
- U. Raw, A. Jasenek, H. W. Schock, F. Engelhardt, and Th. Meyer, “Electronic loss mechanisms in chalcopyrite based heterojunction solar cells,” Thin Solid Films 361–362, 298–302 (2000).
- U. Rau, “Tunneling-enhanced recombination in CuInGaSe2 heterojunction solar cells,” Appl. Phys. Lett. 74(1), 111–113 (1999). [CrossRef]
- I. Dirnstorfer, D. M. Hofmann, D. Meister, B. K. Meyer, W. Riedl, and F. Karg, “Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin films,” J. Appl. Phys. 85(3), 1423–1428 (1999). [CrossRef]
- J. H. Schon and E. Bucher, “Comparison of point defects in CuInSe2 and CuGaSe2 single crystals,” Sol. Energy Mater. Sol. Cells 57(3), 229–237 (1999). [CrossRef]
- K. Yoshino, H. Yokoyama, K. Maeda, T. Ikari, A. Fukuyama, P. J. Fons, A. Yamada, and S. Niki, “Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy,” J. Appl. Phys. 86(8), 4354–4359 (1999). [CrossRef]
- M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, “Temperature quenching of photoluminescence intensities in undoped and doped GaN,” J. Appl. Phys. 86(7), 3721–3728 (1999). [CrossRef]
- M. Wagner, I. Dirnstorfer, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer, “Characterization of Cu(In,Ga)Se2 thin films I. Cu-rich layers,” Phys. Status Solidi, A Appl. Res. 167(1), 131–142 (1998). [CrossRef]
- Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ““S-shaped” temperature dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 73(10), 1370–1372 (1998). [CrossRef]
- S. B. Zhang, S. H. Wei, A. Zunger, and H. Katayama-Yoshida, “Defect physics of the CuInSe2 chalcopyrite semiconductor,” Phys. Rev. B 57(16), 9642–9656 (1998). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Bräunig, “Photoluminescence of CuInS2 thin films and solar cells modified by post deposition treatments,” Appl. Phys. Lett. 71(4), 482–484 (1997). [CrossRef]
- M. A. Contreras, A. M. Gabor, A. L. Tennant, S. Asher, J. Tuttle, and R. Noufi, “16.4% total-area conversion efficiency thin-film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell,” Prog. Photovolt. Res. Appl. 2(4), 287–292 (1994). [CrossRef]
- T. Yamaguchi, J. Matsufusa, and A. Yoshida, “Optical properties in RF sputtered CuInxGa1?xSe2 thin films,” Appl. Surf. Sci. 70-71, 669–674 (1993). [CrossRef]
- Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34(1), 149–154 (1967). [CrossRef]
- D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, “Kinetics of radiative recombination at randomly distributed donors and acceptors,” Phys. Rev. 140(1A), A202–A220 (1965). [CrossRef]
Cited By |
 Alert me when this paper is cited |
OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.
Related Journal Articles 
- Angular Solar Absorptance of Absorbers Used in Solar Thermal Collectors (AO)
- Determination of the Atmospheric-Water-Vapor Content in the 940-nm Absorption Band by Use of Moderate Spectral-Resolution Measurements of Direct Solar Irradiance (AO)
- Anamorphic Concentration of Solar Radiation Beyond the One-Dimensional Thermodynamic Limit (AO)
- Optical Characterization Method for Black Pigments Applied to Solar-Selective Absorbing Paints (AO)
- Optical Scattering from Rough-Rolled Aluminum Surfaces (AO)
Related Conference Papers
- On the suitability of diffractive optical elements in solar applications
- Infrared reflectance of NiV thin films produced with DC-magnetron sputtering
- High External Quantum Efficiency from Organic Bulk Heterojunction Photodetectors
- Investigating Charge Carrier Mobilities in Nanocrystal-Polymer Hybrid Photovoltaic Devices
- Investigating Charge Carrier Mobilities in Nanocrystal-Polymer Hybrid Photovoltaic Devices
« Previous Article | Next Article »
OSA is a member of 
For optimal display we recommend the following web browsers:
- Firefox 11+
- Google Chrome 17+
- Internet Explorer 9+
- Safari 5+