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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 1 — Jan. 14, 2013
  • pp: 256–262

113Gb/s (10 x 11.3Gb/s) ultra-low power EAM driver array

Renato Vaernewyck, Johan Bauwelinck, Xin Yin, Ramses Pierco, Jochen Verbrugghe, Guy Torfs, Zhisheng Li, Xing-Zhi Qiu, Jan Vandewege, Richard Cronin, Anna Borghesani, and David Moodie  »View Author Affiliations

Optics Express, Vol. 21, Issue 1, pp. 256-262 (2013)

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This paper presents an ultra-low power SiGe BiCMOS IC for driving a 10 channel electro-absorption modulator (EAM) array at 113Gb/s for wavelength division multiplexing passive optical network (WDM-PON) applications. With an output swing of 2.5Vpp, the EAM driver array consumes only 2.2W or 220mW per channel, 50% below the state of the art. Both the output swing and bias are configurable between 1.5 and 3.0Vpp and 0.75-2.15V respectively.

© 2013 OSA

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.4110) Integrated optics : Modulators

ToC Category:
Access Networks and LAN

Original Manuscript: September 28, 2012
Revised Manuscript: November 16, 2012
Manuscript Accepted: November 19, 2012
Published: January 4, 2013

Virtual Issues
European Conference on Optical Communication 2012 (2012) Optics Express

Renato Vaernewyck, Johan Bauwelinck, Xin Yin, Ramses Pierco, Jochen Verbrugghe, Guy Torfs, Zhisheng Li, Xing-Zhi Qiu, Jan Vandewege, Richard Cronin, Anna Borghesani, and David Moodie, "113Gb/s (10 x 11.3Gb/s) ultra-low power EAM driver array," Opt. Express 21, 256-262 (2013)

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