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Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on siliconElizabeth H. Edwards, Leon Lever, Edward T. Fei, Theodore I. Kamins, Zoran Ikonic, James S. Harris, Robert W. Kelsall, and David A. B. Miller »View Author Affiliations
Elizabeth H. Edwards,1,*
Leon Lever,2
Edward T. Fei,1
Theodore I. Kamins,1
Zoran Ikonic,2
James S. Harris,1
Robert W. Kelsall,2
and David A. B. Miller1
1Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA 2School of Electronic and Electrical Engineering, University of Leeds, Leeds, LS2 9JT, UK *Corresponding author: ehe@alumni.stanford.edu |
Optics Express, Vol. 21, Issue 1, pp. 867-876 (2013)
http://dx.doi.org/10.1364/OE.21.000867
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Abstract
We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.
© 2013 OSA
OCIS Codes
(160.2100) Materials : Electro-optical materials
(230.2090) Optical devices : Electro-optical devices
(230.4110) Optical devices : Modulators
(250.3140) Optoelectronics : Integrated optoelectronic circuits
ToC Category:
Optoelectronics
History
Original Manuscript: October 25, 2012
Revised Manuscript: December 19, 2012
Manuscript Accepted: December 19, 2012
Published: January 8, 2013
Citation
Elizabeth H. Edwards, Leon Lever, Edward T. Fei, Theodore I. Kamins, Zoran Ikonic, James S. Harris, Robert W. Kelsall, and David A. B. Miller, "Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon," Opt. Express 21, 867-876 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-1-867
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References
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- E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. Schaevitz, Y. Rong, S. Claussen, T. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” in “2011 8th IEEE International Conf. on Group IV Photonics (GFP),” (2011), pp. 80–82.
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Agarwal, A. M.
Audet, R. M.
Bowers, J. E.
Burrus, C. A.
Camacho-Aguilera, R.
Cannon, D. D.
Cassan, E.
Chaisakul, P.
Chemla, D. S.
Chrastina, D.
Claussen, S.
Claussen, S. A.
Cohen, O.
Cooper, J.
Coudevylle, J.
Coudevylle, J.-R.
Cressler, J. D.
Damen, T. C.
Danielson, D. T.
Edmond, S.
Edwards, E.
Edwards, E. H.
Fang, A. W.
Fei, E.
Fei, E. T.
Fidaner, O.
Frigerio, J.
Gardes, F. Y.
Gatti, E.
Ge, Y.
Giovane, L. M.
Gossard, A. C.
Grilli, E.
Guzzi, M.
Harris, J.
Harris, J. S.
Harrison, P.
Herman, N.
Ikonic, Z.
Isella, G.
Ishikawa, Y.
Jones, R.
Jongthammanurak, S.
Kamins, T.
Kamins, T. I.
Kelsall, R.
Kimerling, L. C.
Kuo, Y. H.
Kuo, Y.-H.
Le Roux, X.
Lee, Y. K.
Lever, L.
Liu, J.
Luan, H.
Luan, H.-C.
Marris-Morini, D.
Mashanovich, G.
Michel, J.
Miller, D.
Miller, D. A. B.
Nayfeh, A. M.
Okyay, A.
Okyay, A. K.
Onaran, E.
Onbasli, M. C.
Osmond, J.
Paniccia, M. J.
Park, H.
Reed, G. T.
Ren, S.
Rong, Y.
Roth, J.
Roth, J. E.
Rouifed, M.
Rouifed, M.-S.
Roux, X. L.
Saraswat, K.
Schaevitz, R.
Schaevitz, R. K.
Shambat, G.
Sun, X.
Tasurek, E.
Thomson, D. J.
Valavanis, A.
Vivien, L.
von Kanel, H.
Vuckovic, J.
Wada, K.
Wahl, P.
Wiegmann, W.
Wood, T. H.
Yesilyurt, A.
Yu, H. Y.
- L. M. Giovane, H. Luan, A. M. Agarwal, and L. C. Kimerling, “Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers,” Appl. Phys. Lett.78, 541–543 (2001). [CrossRef]
- E. H. Edwards, R. M. Audet, E. T. Fei, S. A. Claussen, R. K. Schaevitz, E. Tasurek, Y. Rong, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators,” Opt. Express20, 29164–29173 (2012). [CrossRef]
- E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. Schaevitz, Y. Rong, S. Claussen, T. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” in “2011 8th IEEE International Conf. on Group IV Photonics (GFP),” (2011), pp. 80–82.
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum well structures,” Phys. Rev. B32, 1043–1060 (1985). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band edge electro-absorption in quantum well structures: The quantum confined stark effect,” Phys. Rev. Lett.53, 2173–2176 (1984). [CrossRef]
- Y. Ishikawa, K. Wada, J. Liu, D. D. Cannon, H.-C. Luan, J. Michel, and L. C. Kimerling, “Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate,” J. of Appl. Phys.98, 013501 (2005). [CrossRef]
- D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett.84, 906–908 (2004). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23, 1430–1432 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. L. Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien, “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett.35, 2913–2915 (2010). [CrossRef] [PubMed]
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- P. Chaisakul, D. Marris-Morini, M. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23, 1430–1432 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. L. Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien, “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett.35, 2913–2915 (2010). [CrossRef] [PubMed]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum well structures,” Phys. Rev. B32, 1043–1060 (1985). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band edge electro-absorption in quantum well structures: The quantum confined stark effect,” Phys. Rev. Lett.53, 2173–2176 (1984). [CrossRef]
- P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. L. Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, M. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23, 1430–1432 (2011). [CrossRef]
- E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, and H. von Kanel, “Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers,” Appl. Phys. Lett.98, 031106 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. L. Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien, “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett.35, 2913–2915 (2010). [CrossRef] [PubMed]
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
- E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. Schaevitz, Y. Rong, S. Claussen, T. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” in “2011 8th IEEE International Conf. on Group IV Photonics (GFP),” (2011), pp. 80–82.
- L. Lever, Z. Ikonic, A. Valavanis, J. Cooper, and R. Kelsall, “Design of Ge/SiGe quantum-confined Stark effect electroabsorption heterostructures for CMOS compatible photonics,” J. Lightwave Tech. 28, 3273–3281 (2010).
- P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. L. Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23, 1430–1432 (2011). [CrossRef]
- J. D. Cressler, SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices (CRC Press-Taylor and Francis, Boca Raton, 2008).
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum well structures,” Phys. Rev. B32, 1043–1060 (1985). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band edge electro-absorption in quantum well structures: The quantum confined stark effect,” Phys. Rev. Lett.53, 2173–2176 (1984). [CrossRef]
- D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett.84, 906–908 (2004). [CrossRef]
- P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. L. Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, M. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23, 1430–1432 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. L. Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien, “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett.35, 2913–2915 (2010). [CrossRef] [PubMed]
- J. Roth, O. Fidaner, E. Edwards, R. Schaevitz, Y.-H. Kuo, N. Herman, T. Kamins, J. Harris, and D. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49 –50 (2008). [CrossRef]
- E. H. Edwards, R. M. Audet, E. T. Fei, S. A. Claussen, R. K. Schaevitz, E. Tasurek, Y. Rong, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators,” Opt. Express20, 29164–29173 (2012). [CrossRef]
- R. Schaevitz, E. H. Edwards, J. E. Roth, E. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. Miller, “Simple electroabsorption calculator for designing 1310 nm and 1550 nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.48, 187 –197 (2012). [CrossRef]
- E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. Schaevitz, Y. Rong, S. Claussen, T. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” in “2011 8th IEEE International Conf. on Group IV Photonics (GFP),” (2011), pp. 80–82.
- R. Schaevitz, E. H. Edwards, J. E. Roth, E. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. Miller, “Simple electroabsorption calculator for designing 1310 nm and 1550 nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.48, 187 –197 (2012). [CrossRef]
- E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. Schaevitz, Y. Rong, S. Claussen, T. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” in “2011 8th IEEE International Conf. on Group IV Photonics (GFP),” (2011), pp. 80–82.
- J. Roth, O. Fidaner, E. Edwards, R. Schaevitz, Y.-H. Kuo, N. Herman, T. Kamins, J. Harris, and D. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49 –50 (2008). [CrossRef]
- O. Fidaner, A. Okyay, J. Roth, R. Schaevitz, Y.-H. Kuo, K. Saraswat, J. Harris, and D. Miller, “Ge\SiGe quantum well waveguide photodetectors on silicon for the near infrared,” IEEE Photon. Technol. Lett.19, 1631 –1633 (2007). [CrossRef]
- P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. L. Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, M. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4, 518–526 (2010). [CrossRef]
- E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, and H. von Kanel, “Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers,” Appl. Phys. Lett.98, 031106 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. L. Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien, “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett.35, 2913–2915 (2010). [CrossRef] [PubMed]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Quantum confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators,” IEEE J. Sel. Top. Quantum Electron.12, 1503–1513 (2006). [CrossRef]
- Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
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- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum well structures,” Phys. Rev. B32, 1043–1060 (1985). [CrossRef]
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- J. Roth, O. Fidaner, E. Edwards, R. Schaevitz, Y.-H. Kuo, N. Herman, T. Kamins, J. Harris, and D. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49 –50 (2008). [CrossRef]
- O. Fidaner, A. Okyay, J. Roth, R. Schaevitz, Y.-H. Kuo, K. Saraswat, J. Harris, and D. Miller, “Ge\SiGe quantum well waveguide photodetectors on silicon for the near infrared,” IEEE Photon. Technol. Lett.19, 1631 –1633 (2007). [CrossRef]
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- R. Schaevitz, E. H. Edwards, J. E. Roth, E. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. Miller, “Simple electroabsorption calculator for designing 1310 nm and 1550 nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.48, 187 –197 (2012). [CrossRef]
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- P. Chaisakul, D. Marris-Morini, M. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
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- E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, and H. von Kanel, “Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers,” Appl. Phys. Lett.98, 031106 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. L. Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien, “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett.35, 2913–2915 (2010). [CrossRef] [PubMed]
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- D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett.84, 906–908 (2004). [CrossRef]
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- J. Roth, O. Fidaner, E. Edwards, R. Schaevitz, Y.-H. Kuo, N. Herman, T. Kamins, J. Harris, and D. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49 –50 (2008). [CrossRef]
- E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. Schaevitz, Y. Rong, S. Claussen, T. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” in “2011 8th IEEE International Conf. on Group IV Photonics (GFP),” (2011), pp. 80–82.
- E. H. Edwards, R. M. Audet, E. T. Fei, S. A. Claussen, R. K. Schaevitz, E. Tasurek, Y. Rong, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators,” Opt. Express20, 29164–29173 (2012). [CrossRef]
- R. Schaevitz, E. H. Edwards, J. E. Roth, E. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. Miller, “Simple electroabsorption calculator for designing 1310 nm and 1550 nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.48, 187 –197 (2012). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Quantum confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators,” IEEE J. Sel. Top. Quantum Electron.12, 1503–1513 (2006). [CrossRef]
- Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
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- J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett.35, 679–681 (2010). [CrossRef] [PubMed]
- Y. Ishikawa, K. Wada, J. Liu, D. D. Cannon, H.-C. Luan, J. Michel, and L. C. Kimerling, “Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate,” J. of Appl. Phys.98, 013501 (2005). [CrossRef]
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- O. Fidaner, A. Okyay, J. Roth, R. Schaevitz, Y.-H. Kuo, K. Saraswat, J. Harris, and D. Miller, “Ge\SiGe quantum well waveguide photodetectors on silicon for the near infrared,” IEEE Photon. Technol. Lett.19, 1631 –1633 (2007). [CrossRef]
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- P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. L. Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
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- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
- J. Roth, O. Fidaner, E. Edwards, R. Schaevitz, Y.-H. Kuo, N. Herman, T. Kamins, J. Harris, and D. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49 –50 (2008). [CrossRef]
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- Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum well structures,” Phys. Rev. B32, 1043–1060 (1985). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band edge electro-absorption in quantum well structures: The quantum confined stark effect,” Phys. Rev. Lett.53, 2173–2176 (1984). [CrossRef]
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- O. Fidaner, A. Okyay, J. Roth, R. Schaevitz, Y.-H. Kuo, K. Saraswat, J. Harris, and D. Miller, “Ge\SiGe quantum well waveguide photodetectors on silicon for the near infrared,” IEEE Photon. Technol. Lett.19, 1631 –1633 (2007). [CrossRef]
- G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4, 518–526 (2010). [CrossRef]
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
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- E. H. Edwards, R. M. Audet, E. T. Fei, S. A. Claussen, R. K. Schaevitz, E. Tasurek, Y. Rong, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators,” Opt. Express20, 29164–29173 (2012). [CrossRef]
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- E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. Schaevitz, Y. Rong, S. Claussen, T. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” in “2011 8th IEEE International Conf. on Group IV Photonics (GFP),” (2011), pp. 80–82.
- J. Roth, O. Fidaner, E. Edwards, R. Schaevitz, Y.-H. Kuo, N. Herman, T. Kamins, J. Harris, and D. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49 –50 (2008). [CrossRef]
- O. Fidaner, A. Okyay, J. Roth, R. Schaevitz, Y.-H. Kuo, K. Saraswat, J. Harris, and D. Miller, “Ge\SiGe quantum well waveguide photodetectors on silicon for the near infrared,” IEEE Photon. Technol. Lett.19, 1631 –1633 (2007). [CrossRef]
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- P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. L. Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. L. Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien, “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett.35, 2913–2915 (2010). [CrossRef] [PubMed]
- O. Fidaner, A. Okyay, J. Roth, R. Schaevitz, Y.-H. Kuo, K. Saraswat, J. Harris, and D. Miller, “Ge\SiGe quantum well waveguide photodetectors on silicon for the near infrared,” IEEE Photon. Technol. Lett.19, 1631 –1633 (2007). [CrossRef]
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
- R. Schaevitz, E. H. Edwards, J. E. Roth, E. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. Miller, “Simple electroabsorption calculator for designing 1310 nm and 1550 nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.48, 187 –197 (2012). [CrossRef]
- J. Roth, O. Fidaner, E. Edwards, R. Schaevitz, Y.-H. Kuo, N. Herman, T. Kamins, J. Harris, and D. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49 –50 (2008). [CrossRef]
- O. Fidaner, A. Okyay, J. Roth, R. Schaevitz, Y.-H. Kuo, K. Saraswat, J. Harris, and D. Miller, “Ge\SiGe quantum well waveguide photodetectors on silicon for the near infrared,” IEEE Photon. Technol. Lett.19, 1631 –1633 (2007). [CrossRef]
- E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. Schaevitz, Y. Rong, S. Claussen, T. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” in “2011 8th IEEE International Conf. on Group IV Photonics (GFP),” (2011), pp. 80–82.
- E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. Schaevitz, Y. Rong, S. Claussen, T. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” in “2011 8th IEEE International Conf. on Group IV Photonics (GFP),” (2011), pp. 80–82.
- G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4, 518–526 (2010). [CrossRef]
- L. Lever, Z. Ikonic, A. Valavanis, J. Cooper, and R. Kelsall, “Design of Ge/SiGe quantum-confined Stark effect electroabsorption heterostructures for CMOS compatible photonics,” J. Lightwave Tech. 28, 3273–3281 (2010).
- P. Chaisakul, D. Marris-Morini, M. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. L. Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23, 1430–1432 (2011). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. L. Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien, “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett.35, 2913–2915 (2010). [CrossRef] [PubMed]
- E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, and H. von Kanel, “Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers,” Appl. Phys. Lett.98, 031106 (2011). [CrossRef]
- E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. Schaevitz, Y. Rong, S. Claussen, T. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” in “2011 8th IEEE International Conf. on Group IV Photonics (GFP),” (2011), pp. 80–82.
- Y. Ishikawa, K. Wada, J. Liu, D. D. Cannon, H.-C. Luan, J. Michel, and L. C. Kimerling, “Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate,” J. of Appl. Phys.98, 013501 (2005). [CrossRef]
- D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett.84, 906–908 (2004). [CrossRef]
- R. Schaevitz, E. H. Edwards, J. E. Roth, E. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. Miller, “Simple electroabsorption calculator for designing 1310 nm and 1550 nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.48, 187 –197 (2012). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum well structures,” Phys. Rev. B32, 1043–1060 (1985). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band edge electro-absorption in quantum well structures: The quantum confined stark effect,” Phys. Rev. Lett.53, 2173–2176 (1984). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum well structures,” Phys. Rev. B32, 1043–1060 (1985). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band edge electro-absorption in quantum well structures: The quantum confined stark effect,” Phys. Rev. Lett.53, 2173–2176 (1984). [CrossRef]
Appl. Phys. Lett.
- E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, and H. von Kanel, “Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers,” Appl. Phys. Lett.98, 031106 (2011). [CrossRef]
- L. M. Giovane, H. Luan, A. M. Agarwal, and L. C. Kimerling, “Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers,” Appl. Phys. Lett.78, 541–543 (2001). [CrossRef]
- D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett.84, 906–908 (2004). [CrossRef]
Electron. Lett.
- J. Roth, O. Fidaner, E. Edwards, R. Schaevitz, Y.-H. Kuo, N. Herman, T. Kamins, J. Harris, and D. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49 –50 (2008). [CrossRef]
IEEE J. Quantum Electron.
- R. Schaevitz, E. H. Edwards, J. E. Roth, E. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. Miller, “Simple electroabsorption calculator for designing 1310 nm and 1550 nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.48, 187 –197 (2012). [CrossRef]
IEEE J. Sel. Top. Quantum Electron.
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Quantum confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators,” IEEE J. Sel. Top. Quantum Electron.12, 1503–1513 (2006). [CrossRef]
IEEE Photon. Technol. Lett.
- O. Fidaner, A. Okyay, J. Roth, R. Schaevitz, Y.-H. Kuo, K. Saraswat, J. Harris, and D. Miller, “Ge\SiGe quantum well waveguide photodetectors on silicon for the near infrared,” IEEE Photon. Technol. Lett.19, 1631 –1633 (2007). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23, 1430–1432 (2011). [CrossRef]
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
J. Lightwave Tech
- L. Lever, Z. Ikonic, A. Valavanis, J. Cooper, and R. Kelsall, “Design of Ge/SiGe quantum-confined Stark effect electroabsorption heterostructures for CMOS compatible photonics,” J. Lightwave Tech. 28, 3273–3281 (2010).
J. of Appl. Phys.
- Y. Ishikawa, K. Wada, J. Liu, D. D. Cannon, H.-C. Luan, J. Michel, and L. C. Kimerling, “Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate,” J. of Appl. Phys.98, 013501 (2005). [CrossRef]
Nat. Photonics
- G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4, 518–526 (2010). [CrossRef]
Nature
- Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
Opt. Express
- A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express14, 9203–9210 (2006). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, M. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- E. Onaran, M. C. Onbasli, A. Yesilyurt, H. Y. Yu, A. M. Nayfeh, and A. K. Okyay, “Silicon-germanium multi-quantum well photodetectors in the near infrared,” Opt. Express20, 7608–7615 (2012). [CrossRef] [PubMed]
- P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. L. Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express20, 3219–3224 (2012). [CrossRef] [PubMed]
- E. H. Edwards, R. M. Audet, E. T. Fei, S. A. Claussen, R. K. Schaevitz, E. Tasurek, Y. Rong, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators,” Opt. Express20, 29164–29173 (2012). [CrossRef]
- D. A. B. Miller, “Energy consumption in optical modulators for interconnects,” Opt. Express20, A293–A308 (2012). [CrossRef] [PubMed]
Opt. Lett.
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, X. L. Roux, E. Gatti, S. Edmond, J. Osmond, E. Cassan, and L. Vivien, “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett.35, 2913–2915 (2010). [CrossRef] [PubMed]
- J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett.35, 679–681 (2010). [CrossRef] [PubMed]
Phys. Rev. B
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum well structures,” Phys. Rev. B32, 1043–1060 (1985). [CrossRef]
Phys. Rev. Lett.
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band edge electro-absorption in quantum well structures: The quantum confined stark effect,” Phys. Rev. Lett.53, 2173–2176 (1984). [CrossRef]
Proc. IEEE
- D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE97, 1166–1185 (2009). [CrossRef]
Other
- E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. Schaevitz, Y. Rong, S. Claussen, T. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” in “2011 8th IEEE International Conf. on Group IV Photonics (GFP),” (2011), pp. 80–82.
- P. Harrison, Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructures, 3rd ed. (Wiley, Chichester, U.K., 2009).
- J. D. Cressler, SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices (CRC Press-Taylor and Francis, Boca Raton, 2008).
- J. Liu, “GeSi photodetectors and electro-absorption modulators for Si electronic-photonic integrated circuits,” Ph.D. thesis, MIT (2007).
- “ www.photond.com ,” (2012).
2012, Ren, IEEE Photon. Technol. Lett.
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
- R. Schaevitz, E. H. Edwards, J. E. Roth, E. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. Miller, “Simple electroabsorption calculator for designing 1310 nm and 1550 nm modulators using germanium quantum wells,” IEEE J. Quantum Electron.48, 187 –197 (2012). [CrossRef]
- P. Chaisakul, D. Marris-Morini, G. Isella, D. Chrastina, M.-S. Rouifed, X. Le Roux, S. Edmond, E. Cassan, J.-R. Coudevylle, and L. Vivien, “10-Gb/s Ge/SiGe multiple quantum-well waveguide photodetector,” IEEE Photon. Technol. Lett.23, 1430–1432 (2011). [CrossRef]
- E. Gatti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, and H. von Kanel, “Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers,” Appl. Phys. Lett.98, 031106 (2011). [CrossRef]
- L. Lever, Z. Ikonic, A. Valavanis, J. Cooper, and R. Kelsall, “Design of Ge/SiGe quantum-confined Stark effect electroabsorption heterostructures for CMOS compatible photonics,” J. Lightwave Tech. 28, 3273–3281 (2010).
- G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4, 518–526 (2010). [CrossRef]
- D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE97, 1166–1185 (2009). [CrossRef]
- J. Roth, O. Fidaner, E. Edwards, R. Schaevitz, Y.-H. Kuo, N. Herman, T. Kamins, J. Harris, and D. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49 –50 (2008). [CrossRef]
- O. Fidaner, A. Okyay, J. Roth, R. Schaevitz, Y.-H. Kuo, K. Saraswat, J. Harris, and D. Miller, “Ge\SiGe quantum well waveguide photodetectors on silicon for the near infrared,” IEEE Photon. Technol. Lett.19, 1631 –1633 (2007). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Quantum confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators,” IEEE J. Sel. Top. Quantum Electron.12, 1503–1513 (2006). [CrossRef]
- Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
- Y. Ishikawa, K. Wada, J. Liu, D. D. Cannon, H.-C. Luan, J. Michel, and L. C. Kimerling, “Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate,” J. of Appl. Phys.98, 013501 (2005). [CrossRef]
- D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett.84, 906–908 (2004). [CrossRef]
- L. M. Giovane, H. Luan, A. M. Agarwal, and L. C. Kimerling, “Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers,” Appl. Phys. Lett.78, 541–543 (2001). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum well structures,” Phys. Rev. B32, 1043–1060 (1985). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band edge electro-absorption in quantum well structures: The quantum confined stark effect,” Phys. Rev. Lett.53, 2173–2176 (1984). [CrossRef]
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