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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 10 — May. 20, 2013
  • pp: 11659–11669

Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8μm

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Z. Mashanovich, and G. Roelkens  »View Author Affiliations

Optics Express, Vol. 21, Issue 10, pp. 11659-11669 (2013)

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The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8μm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

© 2013 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(300.6190) Spectroscopy : Spectrometers

ToC Category:
Integrated Optics

Original Manuscript: March 6, 2013
Revised Manuscript: April 19, 2013
Manuscript Accepted: April 24, 2013
Published: May 6, 2013

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Z. Mashanovich, and G. Roelkens, "Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8μm," Opt. Express 21, 11659-11669 (2013)

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