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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 10 — May. 20, 2013
  • pp: 11698–11704

Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer

Yong-Seok Choi, Jang-Won Kang, Byeong-Hyeok Kim, Dong-Keun Na, Sang-Jun Lee, and Seong-Ju Park  »View Author Affiliations

Optics Express, Vol. 21, Issue 10, pp. 11698-11704 (2013)

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We report on the effect of a p-type MgZnO electron blocking layer (EBL) on the electroluminescence from n-type ZnO/undoped ZnO/p-type ZnO light-emitting diodes (LEDs). The p-type Mg0.1Zn0.9O EBL was introduced between the undoped and p-type ZnO layers. The p-type Mg0.1Zn0.9O EBL increased the ultraviolet emission by 140% at 60 mA and decreased the broad deep-level emission from ZnO LEDs. The calculated band structures and carrier distribution in ZnO LEDs show that p-type Mg0.1Zn0.9O EBL effectively suppresses the electron overflow from undoped ZnO to p-type ZnO and increases the hole concentration in the undoped ZnO layer.

© 2013 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: March 18, 2013
Revised Manuscript: April 30, 2013
Manuscript Accepted: April 30, 2013
Published: May 6, 2013

Yong-Seok Choi, Jang-Won Kang, Byeong-Hyeok Kim, Dong-Keun Na, Sang-Jun Lee, and Seong-Ju Park, "Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer," Opt. Express 21, 11698-11704 (2013)

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