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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 10 — May. 20, 2013
  • pp: 11869–11876

50-Gb/s ring-resonator-based silicon modulator

Takeshi Baba, Suguru Akiyama, Masahiko Imai, Naoki Hirayama, Hiroyuki Takahashi, Yoshiji Noguchi, Tsuyoshi Horikawa, and Tatsuya Usuki  »View Author Affiliations


Optics Express, Vol. 21, Issue 10, pp. 11869-11876 (2013)
http://dx.doi.org/10.1364/OE.21.011869


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Abstract

We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists of a side-wall-grating waveguide, was loaded into the ring resonator. The forward-biased operation mode was applied, which exhibited a VπL as small as 0.28 V·cm at 25 GHz. The driving voltage and optical insertion loss at 50-Gb/s were 1.96 Vpp and 5.2 dB, respectively.

© 2013 OSA

OCIS Codes
(200.4650) Optics in computing : Optical interconnects
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators
(250.4110) Optoelectronics : Modulators

ToC Category:
Optoelectronics

History
Original Manuscript: March 15, 2013
Revised Manuscript: May 2, 2013
Manuscript Accepted: May 2, 2013
Published: May 8, 2013

Citation
Takeshi Baba, Suguru Akiyama, Masahiko Imai, Naoki Hirayama, Hiroyuki Takahashi, Yoshiji Noguchi, Tsuyoshi Horikawa, and Tatsuya Usuki, "50-Gb/s ring-resonator-based silicon modulator," Opt. Express 21, 11869-11876 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-10-11869


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