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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 10 — May. 20, 2013
  • pp: 12776–12782

50-Gb/s silicon optical modulator with traveling-wave electrodes

Xiaoguang Tu, Tsung-Yang Liow, Junfeng Song, Xianshu Luo, Qing Fang, Mingbin Yu, and Guo-Qiang Lo  »View Author Affiliations


Optics Express, Vol. 21, Issue 10, pp. 12776-12782 (2013)
http://dx.doi.org/10.1364/OE.21.012776


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Abstract

We demonstrate silicon Mach-Zehnder Interferometer (MZI) optical modulator with 50.1-Gb/s data rate and 5.56 dB dynamic extinction ratios. The phase shifter is composed by a 4 mm-long reverse-biased p-n junction with a modulation efficiency (Vπ·Lπ) of ~26.7 V·mm and phase shifter loss of ~1.04 dB/mm at Vbias = −6 V. The measured electro-optic bandwidth reaches 25.6 GHz at Vbias = −5 V. Compensation doping method and low loss traveling-wave electrodes are utilized to improve the modulator performance. Measurement result demonstrates that reasonable choosing of working point and doping profile of the silicon optical modulator is critical in order to match the performance requirement of the real application.

© 2013 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.3990) Optical devices : Micro-optical devices
(230.7370) Optical devices : Waveguides
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Integrated Optics

History
Original Manuscript: December 21, 2012
Revised Manuscript: March 6, 2013
Manuscript Accepted: March 6, 2013
Published: May 16, 2013

Citation
Xiaoguang Tu, Tsung-Yang Liow, Junfeng Song, Xianshu Luo, Qing Fang, Mingbin Yu, and Guo-Qiang Lo, "50-Gb/s silicon optical modulator with traveling-wave electrodes," Opt. Express 21, 12776-12782 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-10-12776


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