Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Journal Home About Issues in Progress Current Issue All Issues Feature Issues

Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells

G. W. Shu, J. Y. Lin, H. T. Jian, J. L. Shen, S. C. Wang, C. L. Chou, W. C. Chou, C. H. Wu, C. H. Chiu, and H. C. Kuo

Open Access Open Access

Abstract

Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.

©2012 Optical Society of America

Full Article  |  PDF Article
More Like This
Theoretical modeling and ultra-thin design for multi-junction solar cells with a light-trapping front surface and its application to InGaP/GaAs/InGaAs 3-junction

Lin Zhu, Yongtao Wang, Xu Pan, and Hidefumi Akiyama
Opt. Express 30(20) 35202-35218 (2022)

Current matching using CdSe quantum dots to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells

Ya-Ju Lee, Yung-Chi Yao, Meng-Tsan Tsai, An-Fan Liu, Min-De Yang, and Jiun-Tsuen Lai
Opt. Express 21(S6) A953-A963 (2013)

Charge separation in subcells of triple-junction solar cells revealed by time-resolved photoluminescence spectroscopy

David M. Tex, Mitsuru Imaizumi, and Yoshihiko Kanemitsu
Opt. Express 23(24) A1687-A1692 (2015)

View More...

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (9)
Fig. 1
Fig. 1 Schematic illustration of the investigated InGaP/InGaAs/Ge triple-junction solar cell.

Download Full Size | PDF

Fig. 2
Fig. 2 Electroluminescence (EL) images of the triple-junction InGaP/InGaAs/Ge solar cell taken with the measurement (a) without and (b) with irradiation of an extra IR laser. The scale bar applies to images (a)-(b).

Download Full Size | PDF

Fig. 3
Fig. 3 The dependence of EL intensity of the top subcell on injection current without (the solid line) and with (the dashed line) irradiation of an extra IR laser.

Download Full Size | PDF

Fig. 4
Fig. 4 Surface maps of EL intensity of the top subcell with different irradiation powers of IR light: (a) 0 (b) 1.8 (c) 8.3, and (d) 18.7 mW.

Download Full Size | PDF

Fig. 5
Fig. 5 EL intensity of profile of a line scan in the top subcell with different irradiation power of IR light: (a) 0, (b) 1.8, (c) 8.3, (d) 18.7, and (e) 59.0 mW. The dotted line displays the beam profile of the IR laser.

Download Full Size | PDF

Fig. 6
Fig. 6 Integrated EL intensity from a line scan versus the irradiation power of IR light.

Download Full Size | PDF

Fig. 7
Fig. 7 Electroreflectance spectra of the InGaP top subcell without (the solid line) and with (the dotted line) the IR illumination of 20 mW.

Download Full Size | PDF

Fig. 8
Fig. 8 Induced voltage change δV of the InGaP top subcell for five different illumination powers (open circles). The solid line displays the calculated photovoltage according to Eq. (4).

Download Full Size | PDF

Fig. 9
Fig. 9 Time dependence of EL intensity upon the ON-OFF switching of IR light irradiation.

Download Full Size | PDF

Equations (6)

Equations on this page are rendered with MathJax. Learn more.

I EL ∝ n p(0) L,
n p(0) = n p exp(e V app /kT),
ln I EL =C+e V app /kT,
V ph = nkT q ln( J PC A J 0 +1),
J PC =ePη(1−R)/ℏω,
ln I EL =C+e( V app − V ph )/kT.
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use