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An optimized surface plasmon photovoltaic structure using energy transfer between discrete nano-particles

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Abstract

Surface plasmon enhancement has been proposed as a way to achieve higher absorption for thin-film photovoltaics, where surface plasmon polariton(SPP) and localized surface plasmon (LSP) are shown to provide dense near field and far field light scattering. Here it is shown that controlled far-field light scattering can be achieved using successive coupling between surface plasmonic (SP) nano-particles. Through genetic algorithm (GA) optimization, energy transfer between discrete nano-particles (ETDNP) is identified, which enhances solar cell efficiency. The optimized energy transfer structure acts like lumped-element transmission line and can properly alter the direction of photon flow. Increased in-plane component of wavevector is thus achieved and photon path length is extended. In addition, Wood-Rayleigh anomaly, at which transmission minimum occurs, is avoided through GA optimization. Optimized energy transfer structure provides 46.95% improvement over baseline planar cell. It achieves larger angular scattering capability compared to conventional surface plasmon polariton back reflector structure and index-guided structure due to SP energy transfer through mode coupling. Via SP mediated energy transfer, an alternative way to control the light flow inside thin-film is proposed, which can be more efficient than conventional index-guided mode using total internal reflection (TIR).

©2012 Optical Society of America

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Figures (11)

Fig. 1
Fig. 1 Illustration of SP mode coupling between discrete metallic nano-particles.
Fig. 2
Fig. 2 The first attempt of SP energy transfer structure and its parameters to be optimized.
Fig. 3
Fig. 3 Spectral response for initial attempt of optimized SP energy transfer structure.
Fig. 4
Fig. 4 The second SP energy transfer structure and its parameters to be optimized.
Fig. 5
Fig. 5 Spectral response for the Optimized second evolutionary structure with more closely spaced bottom Ag grating
Fig. 6
Fig. 6 Genetic algorithm statistics for the second evolutionary structure.
Fig. 7
Fig. 7 Electric field profile of optimized energy transfer structure at λ = 642.4nm (a) for scattering problem (b) for corresponding eigen mode (c) successive mode coupling between adjacent nano-particles.
Fig. 8
Fig. 8 (a) Vector field plot of Poynting vector for optimized energy transfer structure at λ = 642.4nm. (b) lateral component of Poynting vector at λ = 642.4nm.
Fig. 9
Fig. 9 (a) Spectral response, (b) angular distribution of Poynting vector, and (c) electric field profile for energy transfer between discrete nano-particles (ETDNP) at λ = 642nm.
Fig. 10
Fig. 10 (a) Spectral response, (b) angular distribution of Poynting vector, and (c) electric field profile for surface plasmon polariton (SPP) enhancement at λ = 812nm.
Fig. 11
Fig. 11 (a)Spectral response, (b)angular distribution of Poynting vector, and (c) electric field profile for index-guided (IG) enhancement at λ = 606nm.

Tables (1)

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Table 1 Comparison of Silicon Absorbance and Metallic Loss for Various Schemes

Equations (11)

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Ρ poynintg = E ( r )× H ( r ) Ρ absorption = E ( r ) J ( r )= E ( r )σ(λ) E ( r )
P poynting, avg = P poynting, avg, x a ^ x + P poynting, avg, y a ^ y = 1 2 Re{ E y ( r ) H z * ( r )} a ^ x 1 2 Re{ E x ( r ) H z * ( r )} a ^ y
Ε EMW,avg t =0
V P Loss, avg dV + S P poynting, avg d S =0
1 2 V Re{ E ( r ) J * ( r ) }dv + 1 2 S Re{ E ( r )× H * ( r ) }d S = 1 2 V E ( r )σ(λ) E * ( r )dv + 1 2 S Re{ E ( r )× H * ( r ) }d S =0
θ= tan 1 P poynting,avg,x P poynting,avg,y = tan 1 Re{ E y ( r ) H z * ( r )} Re{ E x ( r ) H z * ( r )}
θ avg = θ=0 2π | modulus(θ,π) π 2 |× P poynting,avg (θ) θ=0 2π P poynting,avg (θ) = θ=0 π | θ π 2 |× P poynting,avg (θ) + θ=π 2π | θ 3π 2 |× P poynting,avg (θ) θ=0 2π P poynting,avg (θ)
E ( r )= u ( r )exp(i k InPlane r )
k x =k ' x +ik " x = ω c ( ε m ε d ε m + ε d ) 1/2
k z,m =k ' z,m +ik " z,m = ω c ( ε m 2 ε m + ε d ) 1/2
2 E(x,z)+ ω 2 μεE(x,z) = 2 [ i b i (z)exp(j k x,i x) ] + ω 2 με i b i (z)exp(j k x,i x)=0
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