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Energy Express

  • Editor: Christian Seassal
  • Vol. 21, Iss. S1 — Jan. 14, 2013
  • pp: A53–A59

Optical polarization characteristics of semipolar (30 3 ¯ 1) and (30 3 ¯ 1 ¯ ) InGaN/GaN light-emitting diodes

Yuji Zhao, Qimin Yan, Daniel Feezell, Kenji Fujito, Chris G. Van de Walle, James S. Speck, Steven P. DenBaars, and Shuji Nakamura  »View Author Affiliations

Optics Express, Vol. 21, Issue S1, pp. A53-A59 (2013)

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Linear polarized electroluminescence was investigated for semipolar (30 3 ¯ 1) and (30 3 ¯ 1 ¯ ) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k⋅p method for the above two planes. The theoretical calculations are consistent with the experimental results.

© 2012 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.5440) Optical devices : Polarization-selective devices

ToC Category:
Light-Emitting Diodes

Original Manuscript: August 20, 2012
Revised Manuscript: October 25, 2012
Manuscript Accepted: October 25, 2012
Published: November 27, 2012

Yuji Zhao, Qimin Yan, Daniel Feezell, Kenji Fujito, Chris G. Van de Walle, James S. Speck, Steven P. DenBaars, and Shuji Nakamura, "Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes," Opt. Express 21, A53-A59 (2013)

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