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Optical polarization characteristics of semipolar (30 3 ¯ 1) and (30 3 ¯ 1 ¯ ) InGaN/GaN light-emitting diodes

Yuji Zhao, Qimin Yan, Daniel Feezell, Kenji Fujito, Chris G. Van de Walle, James S. Speck, Steven P. DenBaars, and Shuji Nakamura

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Abstract

Linear polarized electroluminescence was investigated for semipolar (303¯1) and (303¯1¯) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k⋅p method for the above two planes. The theoretical calculations are consistent with the experimental results.

©2012 Optical Society of America

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Figures (6)
Fig. 1
Fig. 1 Schematic views of (a) the microscope system used for the polarization measurements, (b) the studied LED structure, and (c) the semipolar (30 3 ¯ 1) crystal planes.

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Fig. 2
Fig. 2 Electroluminescence spectra of (30 3 ¯ 1 ¯ ) InGaN LEDs at a wavelength of (a) 445 nm, (b) 483 nm, and (c) 509 nm, showing increasing polarization ratio and energy separation with increasing wavelength. Similar results were obtained for (30 3 ¯ 1) LEDs at a wavelength of (d) 438 nm, (e) 479 nm, and (f) 514 nm.

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Fig. 3
Fig. 3 (a) Optical polarization and (b) energy separation (ΔE) with increasing wavelength for (30 3 ¯ 1 ¯ ) and (30 3 ¯ 1) LEDs. Red dash lines are the simulated trend for the experimental data.

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Fig. 4
Fig. 4 Strain components in semipolar (30 3 ¯ 1) InGaN grown on GaN as a function of indium composition: x, y and z refer to the natural coordinate system.

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Fig. 5
Fig. 5 The calculated valance band dispersion relation for semipolar (30 3 ¯ 1) InGaN/GaN QW with an indium composition of 20%.

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Fig. 6
Fig. 6 The calculated energy separation (ΔE) between the top two valance bands at the Γ point (30 3 ¯ 1) InGaN QW and bulk structures.

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