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Opimization of imprintable nanostructured a-Si solar cells: FDTD study

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Abstract

We present a finite-difference time-domain (FDTD) study of an amorphous silicon (a-Si) thin film solar cell, with nano scale patterns on the substrate surface. The patterns, based on the geometry of anisotropically etched silicon gratings, are optimized with respect to the period and anti-reflection (AR) coating thickness for maximal absorption in the range of the solar spectrum. The structure is shown to increase the cell efficiency by 10.2% compared to a similar flat solar cell with an optimized AR coating thickness. An increased back reflection can be obtained with a 50nm zinc oxide layer on the back reflector, which gives an additional efficiency increase, leading to a total of 14.9%. In addition, the patterned cells are shown to be up to 3.8% more efficient than an optimized textured reference cell based on the Asahi U-type glass surface. The effects of variations of the optimized solar cell structure due to the manufacturing process are investigated, and shown to be negligible for variations below ±10%.

© 2013 Optical Society of America

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Figures (15)

Fig. 1
Fig. 1 Two different imprinted solar cell structures made from the same anisotropically etched silicon grating.
Fig. 2
Fig. 2 Solar cell geometry (a) and incident light polarizations relative to the cell (b).
Fig. 3
Fig. 3 Experimentally determined refractive index of a-Si (a). The solar spectrum and absorbed portion in the a-Si with 60nm AR coating and a period of 600nm (b).
Fig. 4
Fig. 4 Intentity distribution through the sample for wavelengths (a) λ = 400nm, (b) λ = 500nm, (c) λ = 600nm, and (d) λ = 700nm.
Fig. 5
Fig. 5 Integrated quantum efficiency of a-Si solar cells for varying AR coating thicknesses. The black and red curves show the IQE of the structure 1 solar cell with a 600nm period for s- and p-polarization respectively, while the blue and magenta curves are for two flat cells with 500nm and 290nm a-Si layer thicknesses respectively.
Fig. 6
Fig. 6 IQE of s-polarized (a) and p-polarized (b) light as a function of lattice period and AR coating thickness for structure 1.
Fig. 7
Fig. 7 Same as Fig. 6 but for solar cell structure 2.
Fig. 8
Fig. 8 Average IQE of solar cell structure 1 (a) and 2 (b) as a function of lattice period and AR coating thickness.
Fig. 9
Fig. 9 Geometry of the cell with initial a-Si layer thickness x = 500nm and variation parameter δ (a). The corresponding IQE as a function of δ (b).
Fig. 10
Fig. 10 Geometry of the cell with initial AR coating layer thickness y = 104nm and variation parameter γ (a). The corresponding IQE as a function of γ (b).
Fig. 11
Fig. 11 Geometry of three cell grooves with variable widths (a) and the corresponding IQE as a function of the variation parameters w1 and w2 for the s-polarization (b) and p-polarization (c).
Fig. 12
Fig. 12 Geometry of the cell with a nc-ZnO layer (left) and IQE as a function of the layer thickness h3 (right).
Fig. 13
Fig. 13 Average IQE of the solar cell with a ZnO back reflector layer for structure 1 (a) and 2 (b) as a function of lattice period and AR coating thickness.
Fig. 14
Fig. 14 Imprint solar cell model based on an Asahi surface (a) and the Asahi U-type surface profiles used for the modelling (b).
Fig. 15
Fig. 15 IQE of the flat and the Asahi U-type textured reference cells with 100nm ZnO in the back reflector layer, compared to structure 1 and 2 cells with optimized lattice periods, for varying AR coating thickness.

Equations (1)

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IQE = λ I sun ( λ ) QE ( λ ) d λ λ I sun ( λ ) d λ .
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