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Single-material zinc sulfide bi-layer antireflection coatings for GaAs solar cells

Jung Woo Leem, Dong-Hwan Jun, Jonggon Heo, Won-Kyu Park, Jin-Hong Park, Woo Jin Cho, Do Eok Kim, and Jae Su Yu

Open Access Open Access

Abstract

We demonstrated the efficiency improvement of GaAs single-junction (SJ) solar cells with the single-material zinc sulfide (ZnS) bi-layer based on the porous/dense film structure, which was fabricated by the glancing angle deposition (GLAD) method, as an antireflection (AR) coating layer. The porous ZnS film with a low refractive index was formed at a high incident vapor flux angle of 80° in the GLAD. Each optimum thickness of ZnS bi-layer was determined by achieving the lowest solar weighted reflectance (SWR) using a rigorous coupled-wave analysis method in the wavelength region of 350-900 nm, extracting the thicknesses of 20 and 50 nm for dense and porous films, respectively. The ZnS bi-layer with a low SWR of ~5.8% considerably increased the short circuit current density (Jsc) of the GaAs SJ solar cell to 25.57 mA/cm2, which leads to a larger conversion efficiency (η) of 20.61% compared to the conventional one without AR layer (i.e., SWR~31%, Jsc = 18.81 mA/cm2, and η = 14.82%). Furthermore, after the encapsulation, its Jsc and η values were slightly increased to 25.67 mA/cm2 and 20.71%, respectively. For the fabricated solar cells, angle-dependent reflectance properties and external quantum efficiency were also studied.

©2013 Optical Society of America

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Figures (5)
Fig. 1
Fig. 1 Schematic diagram for depositing the ZnS films by GLAD method.

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Fig. 2
Fig. 2 (a) XRD patterns and (b) measured n and k of the deposited ZnS films on GaAs substrates at θα = 0 and 80°. The cross-sectional and top-view SEM images of the corresponding ZnS films are also shown in the inset of (a).

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Fig. 3
Fig. 3 (a) Schematic diagram of the GaAs SJ solar cell epilayer structure with the ZnS bi-layer (θα = 80°/0°) and (b) calculated SWR as functions of ZnS film thicknesses at θα = 0 and 80°.

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Fig. 4
Fig. 4 Calculated (dashed lines) and measured (solid lines) (a) reflectance spectra and (b) SWR as a function of θi for the GaAs SJ solar cells without AR layer and with the ZnS single- and bi-layer. The photograph of the corresponding samples and cross-sectional low- and high-magnification SEM images of the fabricated ZnS bi-layer on the GaAs SJ solar cell are shown in the inset of (a).

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Fig. 5
Fig. 5 Measured J-V curves of the (a) unencapsulated and (b) encapsulated GaAs SJ solar cells without AR layer and with the ZnS single- and bi-layer. The EQE spectra of corresponding cells are shown in the insets of (a) and (b), respectively.

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Tables (1)

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Table 1 Measured device characteristics of the GaAs SJ solar cells with different AR layers before and after the encapsulation.

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Equations (1)

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SWR= ∫ 350nm 900nm S(λ)R(λ)dλ ∫ 350nm 900nm S(λ)dλ ,
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