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Depth profiling analysis of CuIn1-xGaxSe2 absorber layer by laser induced breakdown spectroscopy in atmospheric conditions

Chan Kyu Kim, Seok Hee Lee, Jung Hwan In, Hak Jae Lee, and Sungho Jeong

Open Access Open Access

Abstract

This work reports the capability of depth profile analysis of thin CuIn1-xGaxSe2 (CIGS) absorber layer (1.89 μm) with a sub-hundred nanometer resolution by laser induced breakdown spectroscopy (LIBS). The LIBS analysis was carried out with a commercial CIGS solar cell on flexible substrate by using a pulsed Nd:YAG laser (λ = 532 nm, τ = 5 ns, top-hat profile) and an intensified charge-coupled device spectrometer in atmospheric conditions. The measured LIBS elemental profiles across the CIGS layer agreed closely to those measured by secondary ion mass spectrometry. The resolution of depth profile analysis was about 88 nm. Owing to the short measurement time of LIBS and the capability of in-air measurement, it is expected that LIBS can be applied for in situ analysis of elemental composition and their distribution across the film thickness during development and manufacturing of CIGS solar cells.

© 2013 Optical Society of America

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Figures (8)
Fig. 1
Fig. 1 (a) SEM image of the CIGS layer (TCO and buffer layers were removed) and (b) schematic diagram of the LIBS experiment set up.

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Fig. 2
Fig. 2 (a) Surface morphology, (b) ablation depth and (c) cross-sectional profiles of the LIBS craters for varying laser shot number. (Laser irradiance: 0.15 GW/cm2).

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Fig. 3
Fig. 3 (a) Surface morphology and (b) cross-sectional profiles of the SIMS craters.

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Fig. 4
Fig. 4 Typical LIBS spectra of the CIGS layer in spectral regions of (a) 375-470nm and (b) 500-600nm (gate delay: 0.2μs, gate width: 10μs).

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Fig. 5
Fig. 5 Intensity correlation of the Ga and In line pairs used for summation intensity calculation.

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Fig. 6
Fig. 6 Depth profiles of the CIGS absorber layer measured by (a) LIBS and (b) SIMS. The LIBS intensity profile of Na was independently scaled for clear comparison with the SIMS data

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Fig. 7
Fig. 7 Comparison of the Ga/In intensity ratios predicted by LIBS and SIMS with respect to film depth.

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Fig. 8
Fig. 8 (a) Calibration curve of the LIBS Na intensity and (b) the Na profiles predicted by LIBS and SIMS.

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Tables (2)

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Table 1 Properties of LIBS craters for increasing laser shot number

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Table 2 Spectral characteristics of Ga, In, Cu and Na emission lines. (λij: transition wavelength, Aij: transition probability, Ei and Ej: upper and lower energy levels, and gi-gj: degeneracy of upper and lower energy state)a

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