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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 11 — Jun. 3, 2013
  • pp: 13648–13655

Low cost wafer metrology using a NIR low coherence interferometry

Young Gwang Kim, Yong Bum Seo, and Ki-Nam Joo  »View Author Affiliations


Optics Express, Vol. 21, Issue 11, pp. 13648-13655 (2013)
http://dx.doi.org/10.1364/OE.21.013648


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Abstract

In this investigation, a low cost Si wafer metrology system based on low coherence interferometry using NIR light is proposed and verified. The whole system consists of two low coherence interferometric principles: low coherence scanning interferometry (LCSI) for measuring surface profiles and spectrally-resolved interferometry (SRI) to obtain the nominal optical thickness of the double-sided polished Si wafer. The combination of two techniques can reduce the measurement time and give adequate dimensional information of the Si wafer. The wavelength of the optical source is around 1 μm, for which transmission is non-zero for undoped silicon and can be also detected by a typical CCD camera. Because of the typical CCD camera, the whole system can be constructed inexpensively.

© 2013 OSA

OCIS Codes
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(120.3940) Instrumentation, measurement, and metrology : Metrology

ToC Category:
Instrumentation, Measurement, and Metrology

History
Original Manuscript: March 25, 2013
Revised Manuscript: May 14, 2013
Manuscript Accepted: May 23, 2013
Published: May 30, 2013

Citation
Young Gwang Kim, Yong Bum Seo, and Ki-Nam Joo, "Low cost wafer metrology using a NIR low coherence interferometry," Opt. Express 21, 13648-13655 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-11-13648


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