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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 11 — Jun. 3, 2013
  • pp: 13773–13778

Highly efficient Yb3+-doped channel waveguide laser at 981 nm

D. Geskus, E. H. Bernhardi, K. van Dalfsen, S. Aravazhi, and M. Pollnau  »View Author Affiliations


Optics Express, Vol. 21, Issue 11, pp. 13773-13778 (2013)
http://dx.doi.org/10.1364/OE.21.013773


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Abstract

Channel waveguide lasers operating at 981 nm are demonstrated in KY1−x−yGdxLuy(WO4)2:Yb3+ waveguides grown by liquid phase epitaxy onto undoped KY(WO4)2 substrates and microstructured by Ar+ beam etching. Under pumping at 934 nm of samples with different waveguide geometry and outcoupling degree, a record-high slope efficiency of 76% versus absorbed pump power and a record-high output power of 650 mW for rare-earth-ion-doped microstructured channel waveguide lasers is achieved. The laser performance is compared to that of the same devices when pumping at 981 nm and lasing near 1025 nm.

© 2013 OSA

OCIS Codes
(230.7380) Optical devices : Waveguides, channeled
(140.3615) Lasers and laser optics : Lasers, ytterbium

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: February 11, 2013
Revised Manuscript: March 13, 2013
Manuscript Accepted: May 21, 2013
Published: May 31, 2013

Citation
D. Geskus, E. H. Bernhardi, K. van Dalfsen, S. Aravazhi, and M. Pollnau, "Highly efficient Yb3+-doped channel waveguide laser at 981 nm," Opt. Express 21, 13773-13778 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-11-13773


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References

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