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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 12 — Jun. 17, 2013
  • pp: 13930–13937

Saturation of the free carrier absorption in ZnTe crystals

S. A. Ku, C. M. Tu, W.-C. Chu, C. W. Luo, K. H. Wu, A. Yabushita, C. C. Chi, and T. Kobayashi  »View Author Affiliations

Optics Express, Vol. 21, Issue 12, pp. 13930-13937 (2013)

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This study systematically investigates the influence of free carriers on the generation of THz in ZnTe crystals, over a wide range of pumping fluences. As the pumping fluence is increased (< 6.36 mJ/cm2), the concentration of free carriers gradually increases and the THz output power is saturated, as clearly demonstrated by the time delay in the THz temporal waveforms, the changes in the THz spectral weight and the red-shift in the PL spectra. For high pumping fluences (> 6.36 mJ/cm2), spectacularly, there is a significant quadratic increase in the THz output power when the pumping fluence is increased, as well as at low pumping fluences of < 0.58 mJ/cm2, because of the saturation of free carriers.

© 2013 OSA

OCIS Codes
(190.7110) Nonlinear optics : Ultrafast nonlinear optics
(260.3090) Physical optics : Infrared, far

ToC Category:
Nonlinear Optics

Original Manuscript: March 19, 2013
Revised Manuscript: May 27, 2013
Manuscript Accepted: May 27, 2013
Published: June 3, 2013

S. A. Ku, C. M. Tu, W.-C. Chu, C. W. Luo, K. H. Wu, A. Yabushita, C. C. Chi, and T. Kobayashi, "Saturation of the free carrier absorption in ZnTe crystals," Opt. Express 21, 13930-13937 (2013)

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