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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 12 — Jun. 17, 2013
  • pp: 14452–14457

High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications

Ray-Hua Horng, Kun-Ching Shen, Chen-Yang Yin, Chiung-Yi Huang, and Dong-Sing Wuu  »View Author Affiliations


Optics Express, Vol. 21, Issue 12, pp. 14452-14457 (2013)
http://dx.doi.org/10.1364/OE.21.014452


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Abstract

High performance of Ga-doped ZnO (GZO) prepared using metalorganic chemical vapor deposition (MOCVD) was employed in GaN blue light-emitting diodes (LEDs) as transparent conductive layers (TCL). By the post-annealing process, the annealed 800°C GZO films exhibited a high transparency above 97% at wavelength of 450 nm. The contact resistance of GZO decreased with the annealing temperature increasing. It was attributed to the improvement of the GZO crystal quality, leading to an increase in electron concentration. It was also found that some Zn atom caused from the decomposition process diffused into the p-GaN surface of LED, which generated a stronger tunneling effect at the GZO/p-GaN interface and promoted the formation of ohmic contact. Moreover, contrast to the ITO-LED, a high light extraction efficiency of 77% was achieved in the GZO-LED at injection current of 20 mA. At 350 mA injection current, the output power of 256.51 mW of GZO-LEDs, corresponding to a 21.5% enhancement as compared to ITO-LEDs was obtained; results are promising for the development of GZO using the MOCVD technique for GaN LED applications.

© 2013 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Optoelectronics

History
Original Manuscript: April 15, 2013
Revised Manuscript: May 24, 2013
Manuscript Accepted: May 28, 2013
Published: June 10, 2013

Citation
Ray-Hua Horng, Kun-Ching Shen, Chen-Yang Yin, Chiung-Yi Huang, and Dong-Sing Wuu, "High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications," Opt. Express 21, 14452-14457 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-12-14452


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References

  1. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997), pp. 201–260.
  2. C. C. Pan, C. M. Lee, J. W. Liu, G. T. Chen, and J. I. Chyi, “Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes,” Appl. Phys. Lett.84(25), 5249–5251 (2004). [CrossRef]
  3. K. C. Shen, W. Y. Lin, D. S. Wuu, S. Y. Huang, K. S. Wen, S. F. Pai, L. W. Wu, and R. H. Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett.34(2), 274–276 (2013). [CrossRef]
  4. C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic Carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett.18(19), 2029–2031 (2006). [CrossRef]
  5. J. Y. Kim, M. K. Kwon, S. J. Park, S. H. Kim, and K. D. Lee, “Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal,” Appl. Phys. Lett.96(25), 251103 (2010). [CrossRef]
  6. H. Kim, J. Cho, J. W. Lee, S. Yoon, H. Kim, C. Sone, Y. Park, and T. Y. Seong, “Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers,” Appl. Phys. Lett.90(16), 161110 (2007). [CrossRef]
  7. J. K. Sheu, Y. S. Lu, M. L. Lee, W. C. Lai, C. H. Kuo, and C. J. Tun, “Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer,” Appl. Phys. Lett.90(26), 263511 (2007). [CrossRef]
  8. D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates,” IEEE Photon. Technol. Lett.17(2), 288–290 (2005). [CrossRef]
  9. K. C. Shen, D. S. Wuu, C. C. Shen, S. L. Ou, and R. H. Horng, “Surface modification on wet-etched patterned sapphire substrates using plasma treatments for improved GaN crystal quality and LED performance,” J. Electrochem. Soc.158(10), H988–H993 (2011). [CrossRef]
  10. S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, “Enhanced output power of InGaN–GaN light-emitting diodes with high-transparency nickel-oxide–indium-tin-oxide ohmic contacts,” IEEE Photon. Technol. Lett.15(5), 646–648 (2003). [CrossRef]
  11. J. T. Yan, C. H. Chen, S. F. Yen, and C. T. Lee, “Ultraviolet ZnO nanorod/p-GaN-heterostructured light-emitting diodes,” IEEE Photon. Technol. Lett.22(3), 146–148 (2010). [CrossRef]
  12. T. Y. Park, Y. S. Choi, J. W. Kang, J. H. Jeong, S. J. Park, D. M. Jeon, J. W. Kim, and Y. C. Kim, “Enhanced optical power and low forward voltage of GaN-based light-emitting diodes with Ga-doped ZnO transparent conducting layer,” Appl. Phys. Lett.96(5), 051124 (2010). [CrossRef]
  13. B. Y. Oh, M. C. Jeong, W. Lee, and J. M. Myoung, “Properties of transparent conductive ZnO:Al films prepared by co-sputtering,” J. Cryst. Growth274(3–4), 453–457 (2005). [CrossRef]
  14. T. Agne, Z. Guan, X. M. Li, H. Wolf, T. Wichert, H. Natter, and R. Hempelmann, “Doping of the nanocrystalline semiconductor zinc oxide with the donor indium,” Appl. Phys. Lett.83(6), 1204–1206 (2003). [CrossRef]
  15. K. Y. Yen, C. H. Chiu, C. W. Li, C. H. Chou, P. S. Lin, T. P. Chen, T. Y. Lin, and J. R. Gong, “Performance of InGaN/GaN MQW LEDs using Ga-doped ZnO TCLs prepared by ALD,” IEEE Photon. Technol. Lett.24(23), 2105–2108 (2012). [CrossRef]
  16. C. H. Kuo, C. L. Yeh, P. H. Chen, W. C. Lai, C. J. Tun, J. K. Sheu, and G. C. Chi, “Low operation voltage of Nitride-based LEDs with Al-doped ZnO transparent contact layer,” Electrochem. Solid-State Lett.11(9), H269 (2008). [CrossRef]
  17. T. Yamada, A. Miyake, H. Makino, N. Yamamoto, and T. Yamamoto, “Effect of thermal annealing on electrical properties of transparent conductive Ga-doped ZnO films prepared by ion-plating using direct-current arc discharge,” Thin Solid Films517(10), 3134–3137 (2009). [CrossRef]
  18. G. Gonçalves, E. Elangovan, P. Barquinha, L. Pereira, R. Martins, and E. Fortunato, “Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films,” Thin Solid Films515(24), 8562–8566 (2007). [CrossRef]
  19. S. L. Ou, D. S. Wuu, S. P. Liu, Y. C. Fu, S. C. Huang, and R. H. Horng, “Pulsed laser deposition of ITO/AZO transparent contact layers for GaN LED applications,” Opt. Express19(17), 16244–16251 (2011). [CrossRef] [PubMed]
  20. J. Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, and T. F. Kuech, “P-GaN surface treatments for metal contacts,” Appl. Phys. Lett.76(4), 415–417 (2000). [CrossRef]
  21. C. J. Tun, J. K. Sheu, M. L. Lee, C. C. Hu, C. K. Hsieh, and G. C. Chi, “Effects of thermal annealing on Al-doped ZnO films deposited on p-type Gallium Nitride,” J. Electrochem. Soc.153(4), G296–G298 (2006). [CrossRef]

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