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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 12 — Jun. 17, 2013
  • pp: 14780–14788

Ultrasmooth reaction-sintered silicon carbide surface resulting from combination of thermal oxidation and ceria slurry polishing

Xinmin Shen, Yifan Dai, Hui Deng, Chaoliang Guan, and Kazuya Yamamura  »View Author Affiliations


Optics Express, Vol. 21, Issue 12, pp. 14780-14788 (2013)
http://dx.doi.org/10.1364/OE.21.014780


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Abstract

An ultrasmooth reaction-sintered silicon carbide surface with an rms roughness of 0.424 nm is obtained after thermal oxidation for 30 min followed by ceria slurry polishing for 30 min. By SEM-EDX analysis, we investigated the thermal oxidation behavior of RS-SiC, in which the main components are Si and SiC. As the oxidation rate is higher in the area with defects, there are no scratches or cracks on the surface after oxidation. However, a bumpy structure is formed after oxidation because the oxidation rates of Si and SiC differ. Through a theoretical analysis of thermal oxidation using the Deal-Grove model and the removal of the oxide layer by ceria slurry polishing in accordance with the Preston equation, a model for obtaining an ultrasmooth surface is proposed and the optimal processing conditions are presented.

© 2013 OSA

OCIS Codes
(160.2750) Materials : Glass and other amorphous materials
(160.4670) Materials : Optical materials
(220.5450) Optical design and fabrication : Polishing
(240.5770) Optics at surfaces : Roughness
(350.6090) Other areas of optics : Space optics

ToC Category:
Materials

History
Original Manuscript: May 3, 2013
Revised Manuscript: June 6, 2013
Manuscript Accepted: June 7, 2013
Published: June 13, 2013

Citation
Xinmin Shen, Yifan Dai, Hui Deng, Chaoliang Guan, and Kazuya Yamamura, "Ultrasmooth reaction-sintered silicon carbide surface resulting from combination of thermal oxidation and ceria slurry polishing," Opt. Express 21, 14780-14788 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-12-14780


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