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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 13 — Jul. 1, 2013
  • pp: 15676–15685

A PN-type quantum barrier for InGaN/GaN light emitting diodes

Zi-Hui Zhang, Swee Tiam Tan, Yun Ji, Wei Liu, Zhengang Ju, Zabu Kyaw, Xiao Wei Sun, and Hilmi Volkan Demir  »View Author Affiliations

Optics Express, Vol. 21, Issue 13, pp. 15676-15685 (2013)

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In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the quantum confined Stark effect (QCSE) in the quantum wells and improved hole transport across the active region. In addition, the enhanced overall radiative recombination rates in the multiple quantum wells and increased effective energy barrier height in the conduction band has substantially suppressed the electron leakage from the active region. Furthermore, the electrical conductivity in the proposed devices is improved. The numerical and experimental results are in excellent agreement and indicate that the PN-type quantum barriers hold great promise for high-performance InGaN/GaN LEDs.

© 2013 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

Original Manuscript: April 2, 2013
Revised Manuscript: June 12, 2013
Manuscript Accepted: June 13, 2013
Published: June 24, 2013

Zi-Hui Zhang, Swee Tiam Tan, Yun Ji, Wei Liu, Zhengang Ju, Zabu Kyaw, Xiao Wei Sun, and Hilmi Volkan Demir, "A PN-type quantum barrier for InGaN/GaN light emitting diodes," Opt. Express 21, 15676-15685 (2013)

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