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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 13 — Jul. 1, 2013
  • pp: 15840–15846

Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch

Jijun Feng, Ryoichi Akimoto, Shin-ichiro Gozu, Teruo Mozume, Toshifumi Hasama, and Hiroshi Ishikawa  »View Author Affiliations


Optics Express, Vol. 21, Issue 13, pp. 15840-15846 (2013)
http://dx.doi.org/10.1364/OE.21.015840


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Abstract

We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different bandgap energies. Based on the ion-induced intermixing in InGaAs/AlAsSb coupled double quantum wells, the blueshift of the band edge can be tailored. Through phosphorus ion implantation with a dose of 5 × 1014 cm–2 and subsequent annealing at 720 °C for 60 s, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the cross-phase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ at a 10-GHz repetition rate.

© 2013 OSA

OCIS Codes
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(130.4815) Integrated optics : Optical switching devices

ToC Category:
Integrated Optics

History
Original Manuscript: March 29, 2013
Revised Manuscript: May 31, 2013
Manuscript Accepted: June 17, 2013
Published: June 25, 2013

Citation
Jijun Feng, Ryoichi Akimoto, Shin-ichiro Gozu, Teruo Mozume, Toshifumi Hasama, and Hiroshi Ishikawa, "Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch," Opt. Express 21, 15840-15846 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-13-15840


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