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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 13 — Jul. 1, 2013
  • pp: 16022–16028

A novel concavely apodized DFB semiconductor laser using common holographic exposure

Yuechun Shi, Simin Li, Renjia Guo, Rui Liu, Yating Zhou, and Xiangfei Chen  »View Author Affiliations

Optics Express, Vol. 21, Issue 13, pp. 16022-16028 (2013)

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A novel concavely apodized (CA) distributed feedback (DFB) semiconductor laser was theoretically analyzed and experimentally demonstrated. The CA grating profile is equivalently realized by changing the duty cycle of the sampling structure along the cavity in the middle of which an equivalent phase shift is also inserted. Because the basic grating (seed grating) is uniform, only a common holographic exposure and a µm-level photolithography are required. Therefore, the fabrication cost is highly reduced compared with the true CA grating whose index modulation continuously changes along the cavity. The experimental results show that the laser has good single longitudinal mode operation.

© 2013 OSA

OCIS Codes
(140.3490) Lasers and laser optics : Lasers, distributed-feedback
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: April 9, 2013
Revised Manuscript: June 10, 2013
Manuscript Accepted: June 18, 2013
Published: June 27, 2013

Yuechun Shi, Simin Li, Renjia Guo, Rui Liu, Yating Zhou, and Xiangfei Chen, "A novel concavely apodized DFB semiconductor laser using common holographic exposure," Opt. Express 21, 16022-16028 (2013)

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