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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 14 — Jul. 15, 2013
  • pp: 16263–16272

Investigation of the role of the lateral photo-Dember effect in the generation of terahertz radiation using a metallic mask on a semiconductor

M. E. Barnes, S. A. Berry, P. Gow, D. McBryde, G. J. Daniell, H. E. Beere, D. A. Ritchie, and V. Apostolopoulos  »View Author Affiliations


Optics Express, Vol. 21, Issue 14, pp. 16263-16272 (2013)
http://dx.doi.org/10.1364/OE.21.016263


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Abstract

Pulses of coherent terahertz radiation can be efficiently generated by a lateral diffusion current after ultrafast generation of photo-carriers near a metal interface on the surface of a semiconductor, this is known as the lateral photo-Dember effect. We investigate how the emission depends on the pump spot position, size, power and how it is affected by the application of an applied external bias. We study the role of the metallic mask and how it suppresses emission from the carriers diffusing under it due to a reduction of available radiation states both theoretically and experimentally.

© 2013 osa

OCIS Codes
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
(300.6495) Spectroscopy : Spectroscopy, teraherz

ToC Category:
Ultrafast Optics

History
Original Manuscript: May 7, 2013
Revised Manuscript: June 21, 2013
Manuscript Accepted: June 21, 2013
Published: July 1, 2013

Citation
M. E. Barnes, S. A. Berry, P. Gow, D. McBryde, G. J. Daniell, H. E. Beere, D. A. Ritchie, and V. Apostolopoulos, "Investigation of the role of the lateral photo-Dember effect in the generation of terahertz radiation using a metallic mask on a semiconductor," Opt. Express 21, 16263-16272 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-14-16263


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