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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 14 — Jul. 15, 2013
  • pp: 16578–16583

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer

Lichun Zhang, Qingshan Li, Liang Shang, Feifei Wang, Chong Qu, and Fengzhou Zhao  »View Author Affiliations

Optics Express, Vol. 21, Issue 14, pp. 16578-16583 (2013)

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n-ZnO/p-GaN heterojunction light emitting diodes with different interfacial layers were fabricated by pulsed laser deposition. The electroluminescence (EL) spectra of the n-ZnO/p-GaN diodes display a broad blue-violet emission centered at 430 nm, whereas the n-ZnO/ZnS/p-GaN and n-ZnO/AlN/p-GaN devices exhibit ultraviolet (UV) emission. Compared with the AlN interlayer, which is blocking both electron and hole at hetero-interface, the utilization of ZnS as intermediate layer can lower the barrier height for holes and keep an effective blocking for electron. Thus, an improved UV EL intensity and a low turn-on voltage (~5V) were obtained. The results were studied by peak-deconvolution with Gaussian functions and were discussed using the band diagram of heterojunctions.

© 2013 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: May 7, 2013
Revised Manuscript: June 12, 2013
Manuscript Accepted: June 12, 2013
Published: July 2, 2013

Lichun Zhang, Qingshan Li, Liang Shang, Feifei Wang, Chong Qu, and Fengzhou Zhao, "Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer," Opt. Express 21, 16578-16583 (2013)

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