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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 14 — Jul. 15, 2013
  • pp: 16854–16862

Size-controlled InGaN/GaN nanorod array fabrication and optical characterization

Si-Young Bae, Duk-Jo Kong, Jun-Yeob Lee, Dong-Ju Seo, and Dong-Seon Lee  »View Author Affiliations

Optics Express, Vol. 21, Issue 14, pp. 16854-16862 (2013)

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We demonstrate a cost-effective top-down approach for fabricating InGaN/GaN nanorod arrays using a wet treatment process in a KOH solution. The average diameter of the as-etched nanorods was effectively reduced from 420 nm to 180 nm. The spatial strain distribution was then investigated by measuring the high-resolution cathodoluminescence directly on top of the nanorods. The smaller nanorods showed a higher internal quantum efficiency and lower potential fluctuation, which can subsequently be exploited for high-efficiency photonic devices.

© 2013 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Optical Devices

Original Manuscript: May 6, 2013
Revised Manuscript: June 27, 2013
Manuscript Accepted: June 28, 2013
Published: July 5, 2013

Si-Young Bae, Duk-Jo Kong, Jun-Yeob Lee, Dong-Ju Seo, and Dong-Seon Lee, "Size-controlled InGaN/GaN nanorod array fabrication and optical characterization," Opt. Express 21, 16854-16862 (2013)

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