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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 15 — Jul. 29, 2013
  • pp: 17484–17491

Composite structure of SiO2@AgNPs@p-SiNWs for enhanced broadband optical antireflection

Ren Lu, Yewu Wang, Lin Gu, Wei Wang, Yanjun Fang, and Jian Sha  »View Author Affiliations

Optics Express, Vol. 21, Issue 15, pp. 17484-17491 (2013)

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The composite structure of SiO2@AgNPs@p-SiNWs based on silicon nanowires (SiNWs) produced by metal-assisted chemical etching (MaCE) method has been designed to realize the significant reflection suppression over a broad wavelength range (300 - 2500 nm). Especially, the reflectivity of the structure even below 0.3% at a wide range of 620 - 1950 nm can be achieved. It also has been demonstrated that SiO2 capers play a dominant role in the significant reflection suppression of the composite structure.

© 2013 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(290.5850) Scattering : Scattering, particles
(310.1210) Thin films : Antireflection coatings
(310.6628) Thin films : Subwavelength structures, nanostructures

ToC Category:
Thin Films

Original Manuscript: May 14, 2013
Revised Manuscript: July 9, 2013
Manuscript Accepted: July 10, 2013
Published: July 15, 2013

Ren Lu, Yewu Wang, Lin Gu, Wei Wang, Yanjun Fang, and Jian Sha, "Composite structure of SiO2@AgNPs@p-SiNWs for enhanced broadband optical antireflection," Opt. Express 21, 17484-17491 (2013)

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