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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 15 — Jul. 29, 2013
  • pp: 17670–17670

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata

Zi-Hui Zhang, Swee Tiam Tan, Wei Liu, Zhengang Ju, Ke Zheng, Zabu Kyaw, Yun Ji, Namig Hasanov, Xiao Wei Sun, and Hilmi Volkan Demir  »View Author Affiliations


Optics Express, Vol. 21, Issue 15, pp. 17670-17670 (2013)
http://dx.doi.org/10.1364/OE.21.017670


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Abstract

The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].

© 2013 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

History
Original Manuscript: July 15, 2013
Published: July 16, 2013

Citation
Zi-Hui Zhang, Swee Tiam Tan, Wei Liu, Zhengang Ju, Ke Zheng, Zabu Kyaw, Yun Ji, Namig Hasanov, Xiao Wei Sun, and Hilmi Volkan Demir, "Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata," Opt. Express 21, 17670-17670 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-15-17670


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