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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 15 — Jul. 29, 2013
  • pp: 18532–18537

Ultra-broadband infrared luminescence of Bi-doped thin-films for integrated optics

Beibei Xu, Jianhua Hao, Shifeng Zhou, and Jianrong Qiu  »View Author Affiliations


Optics Express, Vol. 21, Issue 15, pp. 18532-18537 (2013)
http://dx.doi.org/10.1364/OE.21.018532


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Abstract

Ultra-broadband infrared luminescence has been observed in bismuth (Bi)-doped germanate thin-films prepared by pulsed laser deposition. The films are compatible with various types of substrates, including conventional dielectrics (LaAlO3, silica) and semiconductors (Si, GaAs). The emission peak position of the films can be finely tuned by changing oxygen partial pressure during the deposition, while the excitation wavelength locates from ultra-violet to near-infrared regions. The physical mechanism behind the observed infrared luminescence of the Bi-doped films, differing from that of the as-made glass, is discussed.

© 2013 OSA

OCIS Codes
(060.4510) Fiber optics and optical communications : Optical communications
(160.2540) Materials : Fluorescent and luminescent materials
(230.3120) Optical devices : Integrated optics devices
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Integrated Optics

History
Original Manuscript: May 13, 2013
Revised Manuscript: July 12, 2013
Manuscript Accepted: July 17, 2013
Published: July 26, 2013

Citation
Beibei Xu, Jianhua Hao, Shifeng Zhou, and Jianrong Qiu, "Ultra-broadband infrared luminescence of Bi-doped thin-films for integrated optics," Opt. Express 21, 18532-18537 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-15-18532


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