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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 15 — Jul. 29, 2013
  • pp: 18553–18557

Local bandgap control of germanium by silicon nitride stressor

R. Kuroyanagi, L.M. Nguyen, T. Tsuchizawa, Y. Ishikawa, K. Yamada, and K. Wada  »View Author Affiliations

Optics Express, Vol. 21, Issue 15, pp. 18553-18557 (2013)

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We have proposed a new approach to tune the operation wavelength of Franz-Keldysh Ge electro-absorption modulation in Si photonics by controlling the local strain environment to cover the whole range of C + L bands (1.53 – 1.62 μm). The present paper shows a proof of strain-tuning modulator concept by the shift of the Ge absorption edge using SiNx stressor films and Franz-Keldysh effect in strain-controlled Ge.

© 2013 OSA

OCIS Codes
(160.2100) Materials : Electro-optical materials
(230.2090) Optical devices : Electro-optical devices
(230.4110) Optical devices : Modulators
(250.3140) Optoelectronics : Integrated optoelectronic circuits

ToC Category:
Optical Devices

Original Manuscript: June 5, 2013
Revised Manuscript: July 12, 2013
Manuscript Accepted: July 22, 2013
Published: July 26, 2013

R. Kuroyanagi, L.M. Nguyen, T. Tsuchizawa, Y. Ishikawa, K. Yamada, and K. Wada, "Local bandgap control of germanium by silicon nitride stressor," Opt. Express 21, 18553-18557 (2013)

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  1. S. Jongthammanurak, J. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimerling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett.89(16), 161115 (2006). [CrossRef]
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