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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 15 — Jul. 29, 2013
  • pp: 18553–18557

Local bandgap control of germanium by silicon nitride stressor

R. Kuroyanagi, L.M. Nguyen, T. Tsuchizawa, Y. Ishikawa, K. Yamada, and K. Wada  »View Author Affiliations


Optics Express, Vol. 21, Issue 15, pp. 18553-18557 (2013)
http://dx.doi.org/10.1364/OE.21.018553


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Abstract

We have proposed a new approach to tune the operation wavelength of Franz-Keldysh Ge electro-absorption modulation in Si photonics by controlling the local strain environment to cover the whole range of C + L bands (1.53 – 1.62 μm). The present paper shows a proof of strain-tuning modulator concept by the shift of the Ge absorption edge using SiNx stressor films and Franz-Keldysh effect in strain-controlled Ge.

© 2013 OSA

OCIS Codes
(160.2100) Materials : Electro-optical materials
(230.2090) Optical devices : Electro-optical devices
(230.4110) Optical devices : Modulators
(250.3140) Optoelectronics : Integrated optoelectronic circuits

ToC Category:
Optical Devices

History
Original Manuscript: June 5, 2013
Revised Manuscript: July 12, 2013
Manuscript Accepted: July 22, 2013
Published: July 26, 2013

Citation
R. Kuroyanagi, L.M. Nguyen, T. Tsuchizawa, Y. Ishikawa, K. Yamada, and K. Wada, "Local bandgap control of germanium by silicon nitride stressor," Opt. Express 21, 18553-18557 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-15-18553


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References

  1. S. Jongthammanurak, J. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimerling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett.89(16), 161115 (2006). [CrossRef]
  2. J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide- integrated ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2(7), 433–437 (2008). [CrossRef]
  3. A. E. Lim, T. Y. Liow, F. Qing, N. Duan, L. Ding, M. Yu, G. Q. Lo, and D. L. Kwong, “Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector,” Opt. Express19(6), 5040–5046 (2011). [CrossRef] [PubMed]
  4. R. Kuroyanagi, Y. Ishikawa, T. Tsuchizawa, S. Itabashi, and K. Wada, “Controlling strain in Ge on Si for EA modulators,” Proc. IEEE GFP8, 211–213 (2011). [CrossRef]
  5. L. Ding, T. Liow, E. Lim, N. Duan, M. Yu, and G. Lo, “Ge waveguide photodetectors with responsivity roll-off beyond 1620 nm using localized stressor,” OFC/NFOEC Tech. Digest, OW3G.4, 1–3 (2012)
  6. C. G. Van de Walle, “Band lineups and deformation potentials in the model-solid theory,” Phys. Rev. B Condens. Matter39(3), 1871–1883 (1989). [CrossRef] [PubMed]
  7. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Deformation potential constants of biaxially tensile strained Ge epitaxial films on Si(100),” Phys. Rev. B70(15), 155309 (2004). [CrossRef]
  8. Y. Ishikawa, K. Wada, J. Liu, D. D. Cannon, H. Liao, J. Micheal, and L. C. Kimerling, “Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate,” J. Appl. Phys.98(1), 013501 (2005). [CrossRef]
  9. S. B. Park, S. Takita, Y. Ishikawa, J. Osaka, and K. Wada, “Reserve current reduction of Ge photodiodes on Si without post-growth annealing,” Chin. Opt. Lett.7(4), 286–290 (2009). [CrossRef]
  10. A. Ogura, H. Saitoh, D. Kosemura, Y. Kakemura, T. Yoshida, M. Takei, T. Koganezawa, I. Hirosawa, M. Kohno, T. Nishita, and T. Nakanishi, “Evaluation and control of Strain in Si induced by patterned SiN stressor,” Electrochem. Solid-State Lett.12(4), H117–H119 (2009). [CrossRef]
  11. L. Ding, A. E. Lim, J. T. Liow, M. B. Yu, and G. Q. Lo, “Dependences of photoluminescence from P-implanted epitaxial Ge,” Opt. Express20(8), 8228–8239 (2012). [CrossRef] [PubMed]
  12. H. Shen and F. H. Pollak, “Generalized Franz-Keldysh theory of electromodulation,” Phys. Rev. B Condens. Matter42(11), 7097–7102 (1990). [CrossRef] [PubMed]

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