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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 16 — Aug. 12, 2013
  • pp: 18884–18898

Infrared differential interference contrast microscopy for 3D interconnect overlay metrology

Yi-sha Ku, Deh-Ming Shyu, Yeou-Sung Lin, and Chia-Hung Cho  »View Author Affiliations

Optics Express, Vol. 21, Issue 16, pp. 18884-18898 (2013)

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One of the main challenges for 3D interconnect metrology of bonded wafers is measuring through opaque silicon wafers using conventional optical microscopy. We demonstrate here the use infrared microscopy, enhanced by implementing the differential interference contrast (DIC) technique, to measure the wafer bonding overlay. A pair of two dimensional symmetric overlay marks were processed at both the front and back sides of thinned wafers to evaluate the bonding overlay. A self-developed analysis algorithm and theoretical fitting model was used to map the overlay error between the bonded wafers and the interconnect structures. The measurement accuracy was found to be better than 1.0 micron.

© 2013 OSA

OCIS Codes
(120.3940) Instrumentation, measurement, and metrology : Metrology
(180.3170) Microscopy : Interference microscopy

ToC Category:

Original Manuscript: May 13, 2013
Revised Manuscript: July 25, 2013
Manuscript Accepted: July 26, 2013
Published: August 1, 2013

Yi-sha Ku, Deh-Ming Shyu, Yeou-Sung Lin, and Chia-Hung Cho, "Infrared differential interference contrast microscopy for 3D interconnect overlay metrology," Opt. Express 21, 18884-18898 (2013)

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