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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 17 — Aug. 26, 2013
  • pp: 19518–19529

Optimization of efficiency-loss figure of merit in carrier-depletion silicon Mach-Zehnder optical modulator

Ilya Goykhman, Boris Desiatov, Shalva Ben-Ezra, Joseph Shappir, and Uriel Levy  »View Author Affiliations


Optics Express, Vol. 21, Issue 17, pp. 19518-19529 (2013)
http://dx.doi.org/10.1364/OE.21.019518


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Abstract

In this paper we study the optimization of interleaved Mach-Zehnder silicon carrier depletion electro-optic modulator. Following the simulation results we demonstrate a phase shifter with the lowest figure of merit (modulation efficiency multiplied by the loss per unit length) 6.7V-dB. This result was achieved by reducing the junction width to 200 nm along the phase-shifter and optimizing the doping levels of the PN junction for operation in nearly fully depleted mode. The demonstrated low FOM is the result of both low VπL of ~0.78 Vcm (at reverse bias of 1V), and low free carrier loss (~6.6 dB/cm for zero bias). Our simulation results indicate that additional improvement in performance may be achieved by further reducing the junction width followed by increasing the doping levels.

© 2013 Optical Society of America

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Integrated Optics

History
Original Manuscript: June 14, 2013
Revised Manuscript: July 27, 2013
Manuscript Accepted: July 29, 2013
Published: August 12, 2013

Citation
Ilya Goykhman, Boris Desiatov, Shalva Ben-Ezra, Joseph Shappir, and Uriel Levy, "Optimization of efficiency-loss figure of merit in carrier-depletion silicon Mach-Zehnder optical modulator," Opt. Express 21, 19518-19529 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-17-19518


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