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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 17 — Aug. 26, 2013
  • pp: 19530–19537

10 Gbps silicon waveguide-integrated infrared avalanche photodiode

Jason J. Ackert, Abdullah S. Karar, Dixon J. Paez, Paul E. Jessop, John C. Cartledge, and Andrew P. Knights  »View Author Affiliations

Optics Express, Vol. 21, Issue 17, pp. 19530-19537 (2013)

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We have fabricated monolithic silicon avalanche photodiodes capable of 10 Gbps operation at a wavelength of 1550 nm. The photodiodes are entirely CMOS process compatible and comprise a p-i-n junction integrated with a silicon-on-insulator (SOI) rib waveguide. Photo-generation is initiated via the presence of deep levels in the silicon bandgap, introduced by ion implantation and modified by subsequent annealing. The devices show a small signal 3 dB bandwidth of 2.0 GHz as well as an open eye pattern at 10 Gbps. A responsivity of 4.7 ± 0.5 A/W is measured for a 600 µm device at a reverse bias of 40 V.

© 2013 Optical Society of America

OCIS Codes
(040.3060) Detectors : Infrared
(130.3120) Integrated optics : Integrated optics devices
(250.1345) Optoelectronics : Avalanche photodiodes (APDs)

ToC Category:

Original Manuscript: June 27, 2013
Revised Manuscript: August 1, 2013
Manuscript Accepted: August 2, 2013
Published: August 12, 2013

Virtual Issues
Vol. 8, Iss. 9 Virtual Journal for Biomedical Optics

Jason J. Ackert, Abdullah S. Karar, Dixon J. Paez, Paul E. Jessop, John C. Cartledge, and Andrew P. Knights, "10 Gbps silicon waveguide-integrated infrared avalanche photodiode," Opt. Express 21, 19530-19537 (2013)

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