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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 18 — Sep. 9, 2013
  • pp: 20857–20862

High-efficiency GaN-based light-emitting diodes fabricated with identical Ag contact formed on both n- and p-layers

Munsik Oh and Hyunsoo Kim  »View Author Affiliations

Optics Express, Vol. 21, Issue 18, pp. 20857-20862 (2013)

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The authors report high-efficiency GaN-based light-emitting diodes (LEDs) fabricated with identical Ag contact formed on both n- and p-layers. Ag contacts thermally annealed at optimized conditions yielded low specific contact resistances of 4.5 × 10−4 and 9.4 × 10−4 Ωcm2, and high optical reflectivity (at 450 nm) of 88.1 and 85.3% for n- and p-contact, respectively. LEDs fabricated with identical Ag contacts formed on both layers showed 31% brighter light output power and nearly the same forward voltages as compared to reference LEDs. This indicates that Ag contact can be used as a reflective electrode for both n- and p-layers, leading to enhanced extraction efficiency and fewer process steps.

© 2013 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: May 28, 2013
Revised Manuscript: August 8, 2013
Manuscript Accepted: August 20, 2013
Published: August 29, 2013

Munsik Oh and Hyunsoo Kim, "High-efficiency GaN-based light-emitting diodes fabricated with identical Ag contact formed on both n- and p-layers," Opt. Express 21, 20857-20862 (2013)

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