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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 19 — Sep. 23, 2013
  • pp: 22429–22440

Metal-optic cavity for a high efficiency sub-fF Germanium photodiode on a Silicon waveguide

Ryan Going, Myung-Ki Kim, and Ming C Wu  »View Author Affiliations


Optics Express, Vol. 21, Issue 19, pp. 22429-22440 (2013)
http://dx.doi.org/10.1364/OE.21.022429


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Abstract

We propose two designs of nanoscale sub-fF germanium photodiodes which are efficiently integrated with silicon waveguides. The metal-optic cavities are simulated with the finite difference time domain method and optimized using critical coupling concepts. One design is for a metal semiconductor metal photodiode with <200 aF capacitance, 39% external quantum efficiency, and 0.588 (λ/n)3 cavity volume at 1.5µm wavelength. The second design is for a vertical p-i-n photodiode with <100 aF capacitance, 51% external quantum efficiency, and 0.804 (λ/n)3 cavity volume. Both designs make use of CMOS compatible materials germanium and aluminum metal for potential future monolithic integration with silicon photonics.

© 2013 Optical Society of America

OCIS Codes
(230.5160) Optical devices : Photodetectors
(260.3910) Physical optics : Metal optics
(130.3990) Integrated optics : Micro-optical devices

ToC Category:
Integrated Optics

History
Original Manuscript: July 22, 2013
Revised Manuscript: September 3, 2013
Manuscript Accepted: September 3, 2013
Published: September 16, 2013

Citation
Ryan Going, Myung-Ki Kim, and Ming C Wu, "Metal-optic cavity for a high efficiency sub-fF Germanium photodiode on a Silicon waveguide," Opt. Express 21, 22429-22440 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-19-22429


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